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Technical content

Each OP993 and OP999 device consists of a PIN silicon photodiode molded in a dark blue injection molded shell package that provides excellent optical and mechanical axis alignment, optical lens surface, control of chip placement and consistency of the outside package dimensions. OP993 has a TO-18 package style and a wide receiving angle that provides excellent on-axis coupling. OP999 has a T-1¾ package style and a narrow receiving angle that provides excellent on-axis coupling. Both devices are 100% production tested for close correlation with OPTEK GaAIAs emitters. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications:  Non-contact reflective object sensor  Assembly line automation  Machine automation  Choice of TO-18 (OP993) or T-1¾ package (OP999)  Small package style ideal for space-limited applications  Linear response vs. irradiance  Fast switching time  Choice of narrow or wide receiving angle OP993 OP999

Ordering Information

OP993 Photodiode 118° 0.75 min OP999 Photodiode 18° CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plastics. Pin # Sensor

1 Anode

2 Cathode

Pin # Sensor

1 Cathode

2 Anode

[MILLIMETERS]DIMENSIONS ARE IN: OP999 INCHES [MILLIMETERS]DIMENSIONS ARE IN:  Machine safety  End of travel sensor  Door sensor RoHS

Reverse Breakdown Voltage 60 V Storage & Operating Temperature Range -40° C to +100° C Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 260° C(1) Reverse Breakdown Voltage 60 V Power Dissipation 100 mW(2) IL Reverse Light Current OP993 OP999 12.5 6.5 28.5 µA VR = 5 V, EE = 1.7 mW/cm2 (3) VR = 5 V, EE = 0.25 mW/cm2 (3) ID Reverse Dark Current 1 60 nA VR = 30 V, EE = 0 (4) V(BR) Reverse Breakdown Voltage 60 V IR = 100 μA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance 4 pF VR = 20 V, EE = 0, f = 1.0 MHz tr Rise Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω tf Fall Time 5 Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/° C above 25° C. (3) Light source is an unfiltered GaAIAs emitting diode operating at peak emission wavelength of 890 nm and EE(APT) of 1.7 mW/cm2 for OP993 and 0.25mW/cm2 for OP999 average within a 0.25” diameter aperture. (4) This dimension is held to within ± 0.005” on the flange edge and may vary up to ± 0.020” in the area of the leads.