OP804TX TTELEC | Alldatasheet

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OP804, OP805 (TX, TXV) © TT electronics plc Issue B 08/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in this series consists of a high reliability NPN silicon phototransistor mounted in a hermetically sealed TO -18 package, which offers high power dissipation and superior hostile environment operation. Device lensing creates a 12° angle when measured from the optical axis to the half power point. These devices can be matched with a solid state infrared source (such as the high resolution OP235 and OP236 series of IREDs), or can be used to sense infrared content in a visible light source (such as a tungsten bulb or sunlight) for automati c brightness control. TX and TXV devices are processed to MIL-PRF-19500. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications:  Space-limited applications  Hostile environment applications Features:  TO-18 hermetically sealed package  Lensed for high sensitivity  Narrow acceptance angle  Processed after MIL-PRF-19500  Mechanically and spectrally matched to high reliability IREDs in the Part Number Sensor Light Current IC(ON) (mA) Min / Max VCE Typ/Max Input Power EE (mW/cm2) Viewing Angle Lead Length Transistor 5 5.0 25° 0.50" OP804TX 7.00 / 22.00 OP804TXV OP805TX 15.00 / NA OP805TXV

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP804, OP805 (TX, TXV) Issue B 08/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -65° C to +150° C Operating Temperature Range -55° C to +125° C Collector-Base Voltage 30 V Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V Emitter-Collector Voltage (applies to all OP800 and OP830 devices) 5 V Lead Soldering Temperature [1/16 inch (1.6mm) fro case for 5 seconds with soldering iron] (1) 260° C Power Dissipation(2) 250 mW Electrical Characteristics (TA = 25°C unless otherwise noted) Input Diode SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IC (ON) On-State Collector Current OP804 (TX, TXV OP805 (TX, TXV) 7.0 15.0 mA VCE = 5.0V, Ee = 20 mW/cm2(3) ICEO Collector-Emitter Dark Current 100 nA VCE = 10.0 V, Ee = 0 100 µA VCE = 30.0 V, Ee = 0 TA = 100° C V(BR)CEO Collector-Base Breakdown Voltage 30 V IC= 100 µA, IB= 0, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 7.0 V IC= 100 µA, Ee = 0 VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V IC = 0.4 mA, Ee = 20 mW/cm(2)(3) tf Rise Time OP804 (TX, TXV) OP805 (TX, TXV) 10.0 15.0 VCC = 30 V, IC = 1.00 mA, RL = 100 Ω µs tr Fall Time OP804 (TX, TXV) OP805 (TX, TXV) 10.0 15.0 Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 2.5 mW/° C above 25° C. (3) Light source is an unfiltered rungsten lamp operated at a temperature of 2870 K