OP804SL TTELEC | Alldatasheet

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OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) © TT electronics plc Rev C 05/2022 Page 1 TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in this series consists of a NPN silicon phototransistor mounted in a hermetically sealed TO -18 package that offers high power dissipation and superior hostile environment operation. The OP800SL (Obsolete), OP804SL, OP805SL and OP830SL devices have a narrow receiving angle that provides excellent on -axis coupling and a bonded base lead that enables conventional transistor biasing. The OP800WSL, OP801WSL, OP802WSL and OP830WSL all have a wide receiving angle that provides relatively even reception over a large area. Devices are 100% production tested using an infrared light source for close correlation with OPTEK ’s GaAs and GaAIAs emitters. The OP800SL and devices are mechanically and spectrally matched to OP130 and OP230 series LEDs. The OP800WSL devices are mechanically and spectrally matched to OP130W and OP230W series devices. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications:

  • Space-limited applications
  • Hostile environment applications
  • Applications requiring high power dissipation Features:
  • TO-18 hermetically sealed package
  • Mechanically and spectrally matched to OP130 and OP230 LEDs
  • TX and TXV process available (see Hi-Rel section)
  • Choice of narrow or wide receiving angle
  • Variety of sensitivity ranges
  • Enhanced temperature range “WSL” Part Number Guide — OPXXX OP X X X X OPTEK Component 8 — TO-18 Package 0 — Phototransistor 3 — Photodarlington SL — Tested at 2870° K WSL — Tested at 2870° K Part Description: OP80__SL = TO-18 dome lens, phototransistor 4 and 5 sensitivity levels tested with 2870° K light source OP80__WSL = TO-18 flat lens, phototransistor 0 through 2 sensitivity levels tested with 2870° K light source OP830SL = TO-18 dome lens, photodarlington tested with 2870° K light source OP830WSL = TO-18 flat lens, photodarlington tested with 2870° K light source RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 2 OP800WSL, OP830WSL OP800SL, OP830SL

1 Collector Collector

2 Base —

3 Emitter Emitter

[MILLIMETERS] DIMENSIONS ARE IN: X THIS DIMENSIOIN CONTROLLED AT HOUSING SURFACE. INCHES [MILLIMETERS] DIMENSIONS ARE IN: X THIS DIMENSION CONTROLLED AT HOUSING SURFACE. OP800WSLSeries OP800SL Series Trans. NPNBase Collector Emitter .068 (1.73) .045 (1.14) .202 (5.13) .187 (4.75) .019 (0.48) .016 (0.41)

2 Places

.230 (5.84) .209 (5.31) Collector (Case) .048 (1.22) .028 (0.71)

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 3 Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65o C to +150o C Operating Temperature Range -65o C to +125o C Collector-Base Voltage (applies to OP800SL only - does not apply to OP800WSL) 30 V Collector-Emitter Voltage OP800 (SL, WSL) OP830 (SL, WSL) 30 V 15 V Emitter-Base Voltage (applies to OP800 (SL, WSL) only) 5 V Emitter-Collector Voltage (applies to all OP800 and OP830 devices) 5 V Continuous Collector Current 50 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1) Power Dissipation 250 mW(2) Electrical Specifications Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied to the leads when soldering. 2. Derate linearly 2.5 mW/° C above 25° C. 3. Junction temperature maintained at 25° C. 4. Light source is an unfiltered tungsten bulb operating at CT = 2870 K.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 4 Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IC(ON) (3) On-State Collector Current OP800SL OP804SL OP805SL OP800WSL OP801WSL OP802WSL 0.5 7.0 0.3 0.5 2.5 mA VCE = 5 V, EE = 2.5 mW/cm2(2)(3)(4) OP830SL OP830WSL - VCE = 5 V, EE = 0.25 mW/cm2(2)(3)(4) ICEO Collector Dark Current OP800 (SL, WSL) OP830 (SL, WSL) 100 nA VCE = 10 V, EE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage OP800 (SL, WSL) OP830 (SL, WSL) V IC = 100 µA V(BR)CBO Collector-Base Breakdown Voltage [applies to OP800SL only] 30 - - V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IE = 100 µA V(BR)EBO Emitter-Base Breakdown Voltage [applies to OP800SL only] 5.0 - - V IE = 100 µA VCE(SAT) (3) Collector-Emitter Saturation Voltage OP800WSL OP800SL OP830SL OP830WSL 0.4 0.4 1.2 1.2 V IC = .4 mA, EE = 2.5 mW/cm2(4) IC = 400 µA, EE = 2.5 mW/cm2(4) IC = 1 mA, EE = 0.25 mW/cm2(4) IC = 1.0 mA, EE = 0.25 mW/cm2(4) tr Rise Time - 7 - µs VCC = 5 V, IC = 0.80 mA, RL = 100 Ω (See Test Circuit) tf Fall Time - 7 - µs Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied to the leads when soldering. 2. Derate linearly 2.5 mW/° C above 25° C. 3. Junction temperature maintained at 25° C. 4. Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 5 Performance OP800SL Series

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 6 Performance OP800WSL Series

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 7 Performance OP830SL Series

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. NPN Phototransistor OP804SL, OP805SL, OP830SL OP800WSL, OP801WSL, OP802WSL, OP830WSL Obsolete (OP800SL) TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 05/2022 Page 8 Performance OP830WSL Series