OP522 TTELEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 1 of 4 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Silicon Phototransistor in Miniature SMT Package

  • Non-Contact Position Sensing
  • Datum detection
  • Machine automation
  • Optical encoders OP522
  • High Photo Sensitivity
  • Fast Response Time
  • 1206 Package Size with Internal Lens The OP522 is an NPN silicon phototransistor mounted in a miniature SMT package. The device incorporates an integral molded lens which enables a narrow acceptance angle and higher collector currents than devices without lenses. This device is packaged in a 1206 size chip carrier that is compatible with most automated mounting equipment. The OP522 is mechanically and spectrally matched to the OP250 series infrared LEDs.

Applications

20% 40% 60% 80% 100% Relative Response Wavelength (nm) Relative Response vs. Wavelength 800 700 600 500 400

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 2 of 4 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. SMT Silicon Phototransistor OP522 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range -40° C to +85° C Operating Temperature Range -25° C to +85° C Lead Soldering Temperature 260° C(1) Collector-Emitter Voltage 30 V Collector Current 20 mA Power Dissipation 75 mW(2) Emitter-Collector Voltage 5 V Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To Calculate typical collector dark current in µA, use the formula I CEO = 10(0.04 T A -3/4) where TA is the ambient temperature in ° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER TYP MAX UNITS CONDITIONS IC(ON) On-State Collector Current mA VCE = 5.0V, Ee = 5.0mW/cm2 (3) VCE(SAT) Collector-Emitter Saturation Voltage 0.4 V IC = 100µA, Ee = 2.0mW/cm2 (3) ICEO Collector-Emitter Dark Current 100 nA VCE = 5.0V, Ee = 0 (4) V(BR)CEO Collector-Emitter Breakdown Voltage V IC = 100µA V(BR)ECO Emitter-Collector Breakdown Voltage V IE = 100µA MIN 0.5 tr, tf Rise and Fall Times 15 µs IC = 1mA, RL = 1KΩ Relative Collector Current Relative On-State Collector Current vs. Irradiance 0 1.0 2.0 3.0 4.0 Ee—Irradiance (mW/cm 2) Relative Collector Current 80% 100% 120% 140% 160% Relative On-State Collector Current vs. Temperature -25 0 25 50 75 100 Temperature—( °C) 60% 40% 5.0 6.0 7.0 90% 100% 110% 120% 130% 80% 70% 140% 8.0 20% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 3 of 4 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. SMT Silicon Phototransistor OP522 30 60 20% 40% 60% 80% 100% Relative Response Angular Position (Degrees) Relative Response vs. Angular Position 0 -30 -60 -90 90 IC(ON) - On-State Collector Current (mA) Relative On-State Collector Current vs. Collector-Emitter Voltage Collector-Emitter Voltage (V) 0.40 0.60 0.80 1.00 1.20 0.20 1.40 1.60 1.80 2.00 6 mW/cm2 5 mW/cm2 4 mW/cm2 3 mW/cm2 2 mW/cm2 1 mW/cm2 Collector-Emitter Dark Current vs. Temperature -25 0 25 Temperature—( °C) Collector-Emitter Dark Current (nA) 1000 50 75 100 100 Conditions: Ee = 0 mW/cm2 VCE = 10V

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 4 of 4 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. SMT Silicon Phototransistor OP522 PIN FUNCTION

1 Collector

2 Emitter

[1.60±0.10] .063±.0039 [1.50±0.10] .059±.0039 [4.60±0.10] .181±.0039 [1.60±0.10] .063±.0039 1 2