OP515A TTELEC | Alldatasheet

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OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 02/05 Page 1 NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D Features:

  • Variety of sensitivity ranges
  • Coaxial leaded package style
  • Small package size for space limited applications Description: The OP515 series devices consist of NPN silicon phototransistors in a small hermetic package with an extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters. Absolute Maximum Ratings (TA=25°C unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage (OP505 and OP506 series only) 5.0 V Storage & Operating Temperature Range -55°C to +125°C Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron) 260°C (1) Power Dissipation 100 mW(2) Continuous Collector Current 50 mA Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may be applied to the leads when soldering. (2) Derate linearly 0.71 mW/° C above 25° C. Dimensions are in inches (mm)

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 02/05 Page 2 NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D Notes: (1) E e(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and perpendicular to and centered to the mechanical axis of t he emitting surface at a distance of 0.466” (11.84mm). Ee(APT) is not nec- essarily uniform within the measured area. (2) Derating Linearly 0.71 mW/°C above 25°C (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) To calculate typical collector dar k current in nA, use the formula I CED = 10(0.040T A -3.4) where TA is ambient temperature in °C. Symbol Parameter Min Typ Max Units Test Conditions IC(ON) On-State OP515D Collector OP515C Current OP515B OP515A 0.40 1.00 3.00 6.00 mA V CE = 5 V, Ee = 5.0 mW/cm2(3) ICEO Collector-Dark Current 100 nA VCE = 10 V, Ee = 0(4) V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 V IE = 100 µA VCE(SAT) Collector-Emitter OP515 Saturation Voltage 0.40 V I C = 400 µA, Ee = 5.0 mW/cm2(3) ∆IC/∆T Relative IC Changes with Temperature OP505A-D and OP506A-D series 1.00 %/°C VCE = 5 V, Ee = 1.0 mW/cm2 IECO Emitter-Reverse Current 100 µA V EC = 0.4 V Collector Current Vs Collector to Emitter Voltage vs Irradiance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE - Collector to Emitter Voltage (V) IC Collector Current (mA) 6 mW/cm2 5 mW/cm2 4 mW/cm2 3 mW/cm2 2 mW/cm2 1 mW/cm2 TA = 25°C λ = 940 nm On-State Collector Current Vs Irradiance y = 0.6364x - 0.1221 R2 = 0.9992 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Ee -Irradiance -mW/cm2 IC (ON) -State Collector Current -mA TA = 25°C VCE = 5 Volts λ = 940 nm