OP508F TTELEC | Alldatasheet
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Technical content
OP508F, OP509 Series © TT electronics plc Issue A 08/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastic “end -looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of a NPN silicon phototransistor mounted in a lensed, clear plastic “end -looking” package. The lensing effect of the package allows an acceptance half -angle of 25° when measured from the optical axis to the half power point. OP508F and OP509 series devices can be mounted on 0.100” (2.54 mm) hole centers, which makes them an ideal low -cost alternate to hermetic OP600 sensors. OP508F and OP509 series devices are mechanically and spectrally matched to the OP168F and OP268F series of infrared emitting diodes. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. For custom versions of the OP508F, OP509 and OP538F series devices please contact your OPTEK representative. Applications: Applications requiring a wide acceptance angle Applications requiring high sensitivity Space-limited applications Features: Flat lensed for wide acceptance angle (OP508F) Lensed for high sensitivity (OP509) Easily stackable on 0.100” (2.54 mm) hole centers Inexpensive plastic package Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509
Ordering Information
120° 0.50" OP508FC OP509A 50° OP509B OP509C RoHS
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP508F, OP509 Series Issue A 08/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com OP508F (A, C) OP509 (A, B) Pin # Transistor
1 Collector
2 Emitter
OP508F & OP509 INCHES [MILLIMDIMENSIONS ARE IN: INCHES [MILLIMET DIMENSIONS ARE IN: OP538
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP508F, OP509 Series Issue A 08/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage and Operating Temperature Range -40o C to +100o C Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1) Power Dissipation 100 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IC(ON) On-State Collector Current OP509A (Dome Lens) OP508FA (Flat Lens) OP509B (Dome Lens) OP508FC (Flat Lens) 5.70 2.70 1.40 0.34 20.00 10.60 mA VCE = 5.0 V, EE = 5 mW/cm2 (3 ) IC/∆ T Relative IC Charge with Temperature - 1.00 - %/°C VCE = 5 V.0, EE = 1.0 mW/cm2(3) , λ = 890 nm ICEO Collector-Dark Current OP508F & OP509 OP538F 100 225 nA VCE = 10.0 V, EE = 0(4) V(BR)CEO Collector-Emitter Breakdown Voltage OP508F & OP509 V IC = 1.00 mA, EE = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA VCE(SAT) Collector-Emitter Saturation Voltage OP508F OP509 0.4 V IC = 300 µA, EE = 5 mW/cm2 (3 ) - - 0.4 V IC = 250 µA, EE = 5 mW/cm2 (3 ) Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/° C above 25° C. 3. Light source is an unfiltered GaAs or GaAlAs LED with a peak emission wavelength of 935 or 890 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formula ICEO=10 (0.040 T A - 3.4), where TA is ambient temperature in °C.
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP508F, OP509 Series Issue A 08/2016 Page 4 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP508FA, OP508FC, OP508FD
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP508F, OP509 Series Issue A 08/2016 Page 5 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP509A, OP509B, OP509D
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP508F, OP509 Series Issue A 08/2016 Page 6 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Issue Change Description Approval Date Used PDFs from PDF Catalog to write new data sheet. June 1996 A Wrote data sheet using above PDFs and information from some unreleased Publisher files (see USED folder). Transferred to new TT Electronics template. 04/04/06