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Plastic Infrared Emitting Diode OP266AA SERIES © TT electronics plc Issue C 07/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emiƫng diode (GaAIAs) that is molded in an IR transmissive clear or amber-Ɵnted epoxy package with a dome lens. Devices feature a narrow source irradiance paƩern and a variety of electrical characterisƟcs. The small T-1 package style makes these devices ideal for space -limited applicaƟons. These devices are mechanically and spectrally matched to other OPTEK products as follows: The OP266AA family conform to the OP506 and OP535 series devices. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Applications:

  • Space-limited applicaƟons
  • ApplicaƟons requiring coupling efficiency
  • BaƩery-operated or voltage-limited Features:
  • T-1 (3 mm) package style
  • Narrow irradiance paƩern
  • Dome lens
  • Higher power output than GaAs at equivalent drive currents
  • 850 nm diode Ordering InformaƟon Part Number LED Peak Wavelength Output Power (mW/cm2) Min / Max IF (mA) Typ / Max Total Beam Angle Lead Length OP266AA 850 nm 5.5 / NA 20 / 50 18° MIN 0.100” OP266AB 7.5 / 12.5 OP266AC 11.5 / 16.5 OP266AD 15.5 / NA Pin # LED

1 Cathode

2 Anode

To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plasƟcs. NOTES: 1. Outside discrete shell is polysulfone CLEAR. 2. This LED is built with a GaAlAs chip. 3. Max allowable epoxy miniscus is 0.030”. 4. For iden ƟficaƟon purposes, Cathode lead is .065” ± .035” longer than the anode lead. 5. Dimensions are in inches RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP266AA SERIES Issue C 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage and OperaƟng Temperature Range -40 o C to +100o C Reverse Voltage 2.0 V ConƟnuous Forward Current 50 mA Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1) Power DissipaƟon 100 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE (APT) Apertured Radiant Incidence OP266AA OP266AB OP266AC OP266AD 5.50 7.50 11.50 15.50 12.5 16.5 mW/cm2 IF = 20 mA Aperture = 0.081” diameter Distance = 0.590” from seaƟng surface to aperture surface VF Forward Voltage - - 1.80 V I F = 20 mA IR Reverse Current - 10 - µA V R= 10 V λP Wavelength at Peak Emission - 850 - nm I F = 10 mA ∆λP /∆T Spectral Shi Ō with Temperature - ±0.18 - nm/°C I F = Constant θHP Emission Angle at Half Power Points - 18 - Degree I F = 20 mA tr Output Rise Time - 10 - ns IF(PK)=100 mA, PW=10 µs, D.C.=10.0% tf Output Fall Time - 10 - ns Input Diode Notes: 1. RMA flux is recommended. DuraƟon can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. E E(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured area.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP266AA SERIES Issue C 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP266AA, AB, AC, AD Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs I F vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Relative Radiant Intensity vs. Angular Displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 Angular Displacement (Degrees) Relative Radiant Intensity Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 m A Forward Current