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Plastic Point Source Infrared Emitting Diode OP245PS © TT electronics plc Issue B 07/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each OP245PS device is an infrared emiƫng diode with a 850 nm GaAIAs chip, molded in a clear IR-transmissive side- looking epoxy package. This package makes these devices ideal for PCBoard mounted sloƩed switches and for mounted interrupt detectors. The stable forward VF vs TA characterisƟc make them suitable for applicaƟons that have limited voltage, such as baƩery operaƟon; whereas, the low TR/TF makes them ideal for high-speed operaƟons. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Applications:

  • Space-limited applicaƟons
  • PCBoard mounted sloƩed switch
  • Mounted interrupt detector
  • High-speed applicaƟons Features:
  • Point source irradiance paƩern
  • Side-looking package for space-limited applicaƟons
  • Wavelength matched to silicon’s peak response
  • Higher power output than GaAs at equivalent drive currents
  • Fast switching speed Ordering InformaƟon Part Number LED Peak Wavelength Lens Type Total Beam Angle Lead Length (min.) OP245PS 850 nm Flat ±18° 0.5” / 12.7 mm Pin # LED

1 Anode

2 Cathode

NOTES; 1. OUTSIDE DISCRETE SHELL IS POLYSULFONE P1700-11 CLEAR. 2. THIS LED IS BUILT WITH A 0.011” X 0.011” GaAIAs CHIP. 3. MAX ALLOWABLE EPOXY MENSCUS IS 0.010”.

1 ANODE 2 CATHODE

[MILLIMETERS]DIMENSIONS ARE IN: CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plasƟcs. RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Point Source Infrared Emitting Diode OP245PS Issue B 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage and OperaƟng Temperature Range -40 o C to +100o C Reverse Voltage 2.0 V ConƟnuous Forward Current 50 mA Peak Forward Current 1.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1) Power DissipaƟon 100 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE (APT) Apertured Radiant Incidence 0.12 - 0.8 mW/ cm2 IF = 20 mA(,3) VF Forward Voltage 1.2 - 1.7 V I F = 20 mA IR Reverse Current - 10 - µA V R= 2 V λP Wavelength at Peak Emission - 850 - nm I F = 20 mA B Spectral Bandwidth between Half Power Points - 50 - nm I F = 20 mA θHP Emission Angle at Half Power Points - ±18° - Degree I F = 20 mA tr Output Rise Time - 10 - ns IF(PK) = 20 mA, PW = 10 µs, D.C. = 10% tf Output Fall Time - 10 - ns IF(PK) = 20 mA, PW = 10 µs, D.C. = 10% Input Diode Notes: 1. RMA flux is recommended. DuraƟon can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/° C above 25° C. 3. E E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.653” (16.6 mm) from the lens Ɵp. EE(APT) is not necessarily uniform within the measured area.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Point Source Infrared Emitting Diode OP245PS Issue B 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP245PS Distance vs Power vs Forward Current 0.2 0.7 1.2 1.7 Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 1.0" and 20 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs Forward Current vs Temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at I F = 20mA at TA = 20°C, VCE = 5 V