OP235TX TTELEC | Alldatasheet

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High Reliability Hermetic Infrared Emitting Diode OP235TX, OP236 (TX, TXV) Obsolete (OP235TXV) © TT electronics plc Rev B 5/2022 Page 1 TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO - 46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors. TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. After 100 % screening, Group A and B are performed on every lot and a Group C test is performed every six months. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications:

  • Non-contact reflective object sensor
  • Assembly line automation
  • Machine automation
  • Machine safety
  • End of travel sensor
  • Door sensor
  • Military and harsh environments Features:
  • TO-46 hermetically sealed package with lens
  • Twice the power output of GaAs at same drive current
  • Characterized to define infrared energy along mechanical axis of device
  • Narrow beam angle
  • Processed to MIL-PRF-19500 Part Number LED Peak Wavelength Output Power (mW/cm2) Min / Max IF (mA) Typ / Max Total Beam Angle Lead Length OP235TX 890 nm 1.5 / NA 50 / 100 18° 0.50" OP235TXV (Obsolete) OP236TX 3.5 / NA OP236TXV Pin # LED Sensor

1 Anode Collector / Cathode

2 Cathode Emitter / Anode

DIMENSIONS ARE IN: INCHES [ MILLIMETERS]

High Reliability Hermetic Infrared Emitting Diode OP235TX, OP236 (TX, TXV) Obsolete (OP235TXV) © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Rev B 5/2022 Page 2 Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65° C to +150° C Operating Temperature Range -55° C to +125° C Reverse Voltage 2.0 V Forward DC Current 100 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1) Power Dissipation 200 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE(APT) Apertured Radiant Incidence OP235TX OP236 (TX, TXV) 1.5 3.5 mW/cm2 IF = 100 mA VF Forward Voltage 1.1 1.3 0.9 2.0 2.2 1.8 V IF = 100 mA IF = 100 mA, TA = -55° C IF = 100 mA, TA = 100° C IR Reverse Current - - 100 µA VR = 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 100 mA β Spectral Bandwidth between Half Power Points - 50 - nm IF = 100 mA θHP Emission Angle at Half Power Points - 18 - Degree IF = 100 mA Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.00 mW/° C above 25° C. 3. EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area.

High Reliability Hermetic Infrared Emitting Diode OP235TX, OP236 (TX, TXV) Obsolete (OP235TXV) © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Rev B 5/2022 Page 3 Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Typical Forward Voltage (V) -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C Forward Voltage vs Forward Current vs Temperature Optical Power vs Forward Current vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) Relative Output Power -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C Normalized at 50 mA and 20° C Optical Power vs Forward Current vs Temperature Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA Normalized at 1.0" and 50 mA Forward Current Distance vs Output Power vs Forward Current