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Hermetic Infrared Emitting Diode OP230 Series General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue B 07/2016 Page 1 © TT electronics plc OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applicaƟons in conjuncƟon with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors. Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon photo‐transistors, while the wide beam angle provides relaƟvely even illuminaƟon over a large area. The OP231W is mechanically and spectrally matched to the OP800WSL and OP830SL series devices. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Custom electrical, wire and cabling and connectors are available. Contact your local representaƟve or OPTEK for more informaƟon. Features: Focused and non‐focused opƟcal light paƩern Enhanced temperature range TO‐46 hermeƟcally sealed package Mechanically and spectrally matched to other Optek devices Choice of power ranges Choice of narrow or wide irradiance paƩern ApplicaƟons: Non‐contact reflecƟve object sensor Assembly line automaƟon Machine automaƟon Machine safety End of travel sensor Door sensor Ordering InformaƟon Part Number LED Peak Wavelength Output Power (mW/cm2) Min / Max Total Beam Angle Lead Length OP231 890 nm 1.5 / NA 18° 0.50" OP232 2.0 / 6.0 OP233 3.0 / NA OP234 850 nm 5.0 / NA OP235 6.0 / NA OP231W 1.5 / NA 50° OP232W 3.5 / 7.0 OP233W 5.0 / NA OP234W 850 nm 5.0 / NA OP235W 6.0 / NA 890 nm
TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Hermetic Infrared Emitting Diode OP230 Series Issue B 07/2016 Page 2 © TT electronics plc OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com OP231, OP232, OP233, OP234, OP235 OP231W, OP232W, OP233W, OP234W, OP235W INCHES [MILLIMETERS]DIMENSIONS ARE IN: Cathode Anode INCHES [MILLIMETERS] DIMENSIONS ARE IN: Cathode Anode Pin # LED
1 Anode
2 Cathode
Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range ‐65o C to +150o C Operating Temperature Range ‐65o C to +125o C Reverse Voltage 2.0 A Continuous Forward Current 100 mA Peak Forward Current 10.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1)(2) Power Dissipation 200 mW(3)
TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Hermetic Infrared Emitting Diode OP230 Series Issue B 07/2016 Page 3 © TT electronics plc OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Notes: 1. RMA flux is recommended. DuraƟon can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.0 mW/° C above 25° C. 3. Measurement made with 100 µs pulse measured at the tra iling edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA. 4. For the OP231 series, E E(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. For the OP231W series, EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 0.466” (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area. Electrical CharacterisƟcs (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode Apertured Radiant Incidence OP231 OP232 OP233 OP234 OP235 1.5 2.0 3.0 5.0 6.0 6.0 mW/ cm OP231 Series IF = 100 mA(3 )(4) Aperture = 0.250” Distance = 1.429” OP231W OP232W OP233W OP234W OP235W 1.5 3.5 5.0 5.0 6.0 7.0 mW/ cm OP231W Series IF = 100 mA(3 )(4) Aperture = 0.250” Distance = 0.466” P O Radiant Power Output OP231 OP232 OP233 6.0 8.0 10.0 mW I F = 100 mA(3 )(4) VF Forward Voltage ‐ ‐ 2.0 V I F = 100 mA (3) IR Reverse Current ‐ ‐ 100 µA V R= 2.0 V λP Wavelength at Peak Emission OP231, OP232, OP233 OP234, OP235 890 850 nm I F = 10 mA β Spectral Bandwidth between Half Power Points ‐ 80 ‐ nm I F = 10 mA ∆λP /∆T Spectral ShiŌ with Temperature ‐ +0.30 ‐ nm/°C I F = Constant θHP Emission Angle at Half Power Points OP231 ‐ OP235 OP231W ‐ OP231W Degree I F = 100 mA tr Output Rise Time ‐ 500 ‐ ns IF(PK)=100 mA, PW=10 µs, and D.C.=10.0% tf Output Fall Time ‐ 250 ‐ ns EE(APTa)
TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Hermetic Infrared Emitting Diode OP230 Series Issue B 07/2016 Page 4 © TT electronics plc OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com OP231, OP232, OP233 (including “W” devices) Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs I F vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Relative Radiant Intensity vs. Angular Displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 Angular Displacement (Degrees) Relative Radiant Intensity Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 m A Forward Current
TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Hermetic Infrared Emitting Diode OP230 Series Issue B 07/2016 Page 5 © TT electronics plc OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Distance vs Output Power vs Forward Current 0.01 0.10 1.00 10.00 Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA Normalized at 1.0" and 50 mA Forward Current Relative Radiant Intensity vs Angular Displacement 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -80 -30 20 70 Angular Displacement (Degrees) Relative Radiant Intensity Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Optical Power vs Forward Current vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Relative Output Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20°C OP234, OP234W
TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Hermetic Infrared Emitting Diode OP230 Series Issue B 07/2016 Page 6 © TT electronics plc OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Typical Forward Voltage (V) -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C Optical Power vs Forward Current vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Relative Output Power -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C Normalized at 50 mA and 20° C Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA Normalized at 1.0" and 50 mA Forward Current OP235, OP235W