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Point Source Hermetic Infrared Emitting Diode OP230WPS © TT electronics plc Issue B 07/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: The OP230WPS is an 850 nm GaAIAs point source infrared emiƫng diode that is mounted in a hermeƟc flat lens TO-46 metal can package. The main advantage of this emiƩer is that it emits photons from a 0.004” area that is aligned with the package’s opƟcal centerline. Unlike other GaAIAs emiƩers, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in a variety of sensing applicaƟons. Another advantage is that the GaAIAs feature provides a higher radiated output than gallium arsenide at the same forward current. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Applications:

  • OpƟcal encoders
  • Light curtains
  • OpƟcal triangulaƟon systems
  • Bar code readers Features:
  • Point source
  • Symmetrical beam paƩern
  • Flat lens for wide beam angle
  • Ideal for use with collimaƟng lenses
  • Wide operaƟng temperature range
  • TO-46 metal can package RoHS Ordering InformaƟon Part Number LED Peak Wavelength Output Power (mW/cm2) Min / Max Total Beam Angle Lead Length OP230WPS 850 nm 0.5 / NA ±45° 0.50” Pin # LED

1 Cathode

2 Anode

[MILLIMETERS]DIMENSIONS ARE IN: X THIS DIMENSION CONTROLLED AT HOUSING SURFACE.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Point Source Hermetic Infrared Emitting Diode OP230WPS Issue B 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -55o C to +150o C OperaƟng Temperature Range -40o C to +125o C Reverse DC Voltage 2.0 V Forward Current 100 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1) Power DissipaƟon 100 mW(2) Peak Forward Current (2 µs pulse width, 0.1% duty cycle) 3.0 A Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE(APT) Apertured Irradiance 0.50 - - mW/cm2 IF = 100 mA(3 ) VF Forward Voltage - - 2.2 V I F = 100 mA IR Reverse Current - - 10 µA V R= 2.5 V λP Peak Wavelength - 850 - nm I F = 20 mA β Spectral Bandwidth @ 50% IF = 20 mA - 15 - nm IF=20 mA θHP Emission Angle at Half Power Points - ±45 - Degree I F = 20 mA tr Output Rise Time - 20 - ns I F(PK)=100 mA, PW=10 µs, and D.C.=10% tf Output Fall Time - 20 - ns I F(PK)=100 mA, PW=10 µs, and D.C.=10% Input Diode Notes: 1. All parameters tested using pulse technique. 2. RMA flux is recommended. DuraƟon can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1 mW/° C above 25° C. 4. E E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35 mm) in diameter and perpendicular to and centered to the mechanical axis of the emiƫng surface at a distance of 0.466” (11.84 mm). EE(APT) is not necessarily uniform within the measured area.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Point Source Hermetic Infrared Emitting Diode OP230WPS Issue B 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP230WPS Distance vs Power vs Forward Current 0.2 0.7 1.2 1.7 Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 1.0" and 20 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs Forward Current vs Temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at I F = 20mA at TA = 20°C, VCE = 5 V