OP223 TTELEC | Alldatasheet
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Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) © TT electronics plc Issue A 11/2016 Page 1 TT Electronics | OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
sensors@ttelectronics.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each OP223 (TX) and OP224 (S, TX, TXV) device is an 890 nm high reliability gallium aluminum arsenide infrared emitting diode that is mounted in a miniature hermetically sealed “pill” type package which can be directly mounted to PCBoards. The gallium aluminum arsenide feature provides twice the radiated output of gallium arsenide at the same forward current. After electrical testing by manufacturing, devices are processed to OPTEK’s 100 percent screening program, which is patterned after MIL-PRF-19500. With a wavelength centered at 890 nm, the OP223 (TXV) and OP224 (S, TX, TXV). TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL -PRF-19500. S devices are processed to OPTEK’s military screening program patterned after MIL-STD-883. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Contact your local representative or OPTEK for more information. Applications: Non-contact reflective object sensor Assembly line automation Machine automation Machine safety End of travel sensor Door sensor Features: Processed to OPTEK’s military screening program, patterned after MIL-PRF-19500 Miniature hermetically sealed “pill” package Twice the power output of GaAs at same drive current “S” level screening available Mechanically and spectrally matched to OP600 phototransistors Part Number LED Peak Wavelength Output Power Minimum Total Beam Angle Lead Length OP223TX 890 nm 1.00 mW/cm2 24° N/A OP224S 1.50 mW/cm2 OP224TX OP224TXV Pin # LED Sensor
1 Anode Collector
2 Cathode Emitter
Pin # LED Sensor [MILLIMETERS]DIMENSIONS ARE IN:
Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) © TT electronics plc Issue A 11/2016 Page 2 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65o C to +150o C Operating Temperature Range -55o C to +125o C Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260° C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Power Dissipation(2) 100 mW Electrical Specifications Notes: 1. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 1.00 mW/° C above 25° C. Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT) Radiant Power Output OP223 (TX) OP224 (S, TX, TXV) 1.00 1.50 mW IF = 50 mA IF = 50 mA VF Forward Voltage 0.80 - 1.80 V IF = 50 mA IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 50 mA B Spectral Bandwidth between Half Power Points - 80 - nm IF = 50 mA ∆λP /∆T Spectral Shift with Temperature - 0.18 - nm/°C IF = Constant θHP Emission Angle at Half Power Points - 18 - Degree IF = 50 mA
Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) © TT electronics plc Issue A 11/2016 Page 3 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP223 (TX), OP224 (S, TX, TXV) Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 10 20 30 40 50 60 70 80 90 100 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Forward Voltage vs Forward Current vs Temperature Optical Power vs IF vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Optical Power vs IF vs Temperature Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 mA Forward Current Distance vs Output Power vs Forward Current Normalized Intensity vs Beam Angle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -45 -35 -25 -15 -5 5 15 25 35 45 Normalized Intensity Angular Displacement (° Degrees)
Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) © TT electronics plc Issue A 11/2016 Page 4 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue Change Description Approval Date A Rewrote and put in new format. Added charts for chip INF226 -01. Sergio De La Garza 05/19/06 A.1 Deleted ROHS symbol from page 1. Sergio De La Garza 07/19/06 A.2 Changed DIMENSIONS statement on p. 1. Changed Issue number and date in footer. Inserted new .jpg logo. Did not put new issue number. Sergio De La Garza 07/26/06 08/18/06 A3 Changed Output Power/Minute to Output Power Minimum on pg. 1 09/11/13 B Replace the Forward Voltage graph with the Normalized Intensity vs Beam Angle graph. Sergio De La Garza 7/13/15