OP168F TTELEC | Alldatasheet

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Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series © TT electronics plc Issue C 07/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each diode in this series is molded into an end-looking plasƟc package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an 850nm gallium aluminum arsenide infrared emiƫng diode molded in a end-looking miniature plasƟc package. The advantage of this emiƩer is that it emits photons from a 0.004” area that is aligned with the package opƟcal centerline. Unlike other GaAlAs emiƩers, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in a variety of applicaƟons. Due to their small size, all diodes in this series offer considerable design flexibility. The OP168F and OP268F series are mechanically and spectrally matched to the OP508F series phototransistor and the OP538F series photodarlingtons. The OP169 and OP269 series are mechanically and spectrally matched to the OP509 series phototransistors. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. For custom screening contact your OPTEK representaƟve. Applications:

  • Space-limited applications
  • Excellent design flexibility
  • PCBoard mounted slotted switch
  • PCBoard interrupter Features:
  • Flat lens for wide radiation angle (OP168, OP268)
  • Integral lens for narrow beam angle (OP169, OP269)
  • Easily stackable on 0.100” (2.54 mm) hole centers
  • Mechanically and spectrally matched to other OPTEK devices OP168 OP268 OP169 OP269 Ordering InformaƟon Part Number LED Peak Wavelength Total Beam Angle Lead Length OP168FA 935 nm 104° 0.50" OP168FB OP168FC OP169A 935 nm 18° OP169B OP169C OP268FA 890 nm OP268FB OP268FC OP268FPS 850 nm 50° OP269A 890 nm 18” OP269B OP269C 104° RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Issue C 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com OP169 (A, B, C), OP269 (A, B, C) OP168F (A, B, C), OP268F (A, B, C, PS) Pin # LED X=0.060” (1.5 mm)

1 Anode

2 Cathode

Pin # LED X=0.060” (1.5 mm) [MILLIMETERS]DIMENSIONS ARE IN: INCHES [MILLIMETERS]DIMENSIONS ARE IN:

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Issue C 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage and Operating Temperature Range -40 o C to +100o C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) OP168, OP169, OP268, OP269 (A, B, C) OP268FPS 3.0 A 100 mA Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260° C Power Dissipation(2) 100 mW Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT)(3) Apertured Radiant Incidence OP168FA OP168FB OP168FC OP169A OP169B OP169C OP268FA OP268FB OP268FC OP268FPS OP269A OP269B OP269C 0.48 0.43 0.27 0.18 0.11 0.03 0.64 0.45 0.36 0.10 0.58 0.42 0.34 0.73 0.22 0.99 0.90 0.82 mW/cm2 IF = 20 mA Aperture = .081” dia. Distance = .400” from tip of lens to aperture surface V F Forward Voltage OP168, OP169 OP268, OP269 OP268FPS 1.40 1.50 1.80 V I F = 20 mA IR Reverse Current OP168, OP169, OP268, OP269 OP268FPS 100 μA VR= 2.0 V λP Wavelength at Peak Emission OP168, OP169 OP268, OP269 OP268FPS 935 890 850 nm IF = 20 mA Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/° C above 25° C. 3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), E E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm) from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), EE(APT) is a measurement of the average apertured radiant energy incident upon a sensing area (APT) is a measurement of the average radiant intensity within the cone formed by the above conditions. EE(APT) is not necessarily uniform within the measured area.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Issue C 07/2016 Page 4 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Electrical Characteristics (TA = 25° C unless otherwise noted— for reference only) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode B Spectral Bandwidth between Half Power Points OP168, OP169, OP268FPS OP268, OP269 nm I F = 10 mA ΔλP /ΔT Spectral Shift with Temperature OP168, OP169, OP268, OP269 ±0.30 ±0.18 nm/°C I F = Constant θHP Emission Angle at Half Power Points OP168 OP169 OP268 OP268FPS OP269 104° 46° 104° 50° 46° Degree I F = 20 mA tr Rise Time OP168, OP169 OP268, OP269 OP268FPS 1000 500 ns IF(PK)=100 mA, PW=10 μs, D.C.=10% tf Fall Time OP168, OP169 OP268, OP269 OP268FPS 500 250 ns IF(PK)=100 mA, PW=10 μs, D.C.=10% Beam Angle OP268FA - OP268FC 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - 8 0 - 6 0 - 4 0 - 2 00 2 04 06 08 0 Angle (Degrees) Amplitude Beam Angle OP168 & OP268 Package Beam Angle OP169 & OP269 Package Beam Angle 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Degrees Normalized Radiance

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Issue C 07/2016 Page 5 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP168 (FA, FB, FC), OP169 (A, B, C) Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 0.6" and 50 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 Forward Current (mA) Typical Forward Voltage (V) -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Optical Power vs I F vs Temp 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current I F (mA) Normalized Optical Power -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Normalized at 20 mA and 20 o C

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Issue C 07/2016 Page 6 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP268 (FA, FB, FC, FPS), OP269 (A, B, C) Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs I F vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 m A Forward Current