OP224K TTELEC | Alldatasheet

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High Speed, High Power, Hermetic Infrared Emitting Diode OP224K © TT electronics plc Issue B 07/2016 Page 1 OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: The OP224K device is an 875 nm gallium aluminum arsenide infrared emiƫng diode (GaAIAs), mounted in a hermeƟcally sealed “pill” package with an enhanced temperature range and a narrow irradiance paƩern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size permits high device density mounƟng. All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data, and to ApplicaƟon BulleƟn 202 for pill-type soldering to PCBoard. Applications:

  • Non-contact reflective object sensor
  • Assembly line automation
  • Machine automation
  • Machine safety
  • End of travel sensor
  • Door sensor
  • Encoders
  • Free Air Data Transmissions Features:
  • Hermetically sealed package
  • Mechanically and spectrally matched to other OPTEK devices
  • Designed for direct mount to PCBoard
  • High Modulation Bandwidth
  • High Irradiance Power Ordering InformaƟon Part Number LED Peak Wavelength Total Beam Angle OP224k 875nm 24° Pin # LED

1 Anode

2 Cathode

EmiƩer INCHES [MILLIMETERS]DIMENSIONS ARE IN: RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Speed, High Power, Hermetic Infrared Emitting Diode OP224K Issue B 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65o C to +150o C Operating Temperature Range -65o C to +125o C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1)(2) Power Dissipation 150 mW(3) Peak Forward Current (2μs pulse with 0.1% duty cycle) 1.0 A Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT)(3) Apertured Radiant Incidence OP224K 5.00 - mW/cm2 I F = 50 mA(4) VF Forward Voltage OP224K 2.00 V IF = 50 mA IR Reverse Current - - 100 μA V R= 2.0 V λP Wavelength at Peak Emission OP224K 875 nm I F = 20 mA B Spectral Bandwidth between Half Power Points OP224K nm I F = 20 mA ΔλP /ΔT Spectral Shift with Temperature OP224 +0.18 nm/°C IF = Constant θHP Emission Angle at Half Power Points - 24 - Degree I F = 50 mA tr Output Rise Time OP224K ns tf Output Fall Time OP224K ns IF(PK)=50 mA, PW=10 μs, and D.C.=10.0% Notes: 1. Refer to Application Bulletin 202 which reviews pr oper soldering techniques for pill-type devices. 2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1.50 mW/° C above 25° C. 4. E necessarily uniform within the measured area.

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Speed, High Power, Hermetic Infrared Emitting Diode OP224K Issue B 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs IF vs Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current IF (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 mA Forward Current Normalized Intensity vs Beam Angle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - 4 5- 3 5- 2 5- 1 5 - 5 5 1 5 2 5 3 5 4 5 Normalized Intensity Angular Displacement (° Degrees)