OP165 TTELEC | Alldatasheet
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Technical content
OP165, OP166 Series © TT electronics plc Issue C 07/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each device in the OP165 and OP166 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is molded in an IR transmissive clear epoxy package with either a dome or flat lens. Devices feature narrow and wide irradiance patterns and a variety of electrical characteristics. The small T -1 package style makes these devices ideal for space -limited applications. OP165 and OP166 devices are mechanically and spectrally matched to the OP505 and OP535 series devices. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: Space-limited applications Applications requiring coupling efficiency Features: T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents
Ordering Information
Output Power (mW/cm2) Min / Max IF (mA) Typ / Max Total Beam Angle Lead Length OP165A 935 nm 1.95 / NA 18° 0.50" OP165B 1.40 / 2.20 OP165C 0.85 / 1.60 OP165D 0.28 / NA OP165W 0.50 / NA 90° OP166A 1.95 / NA 18° OP166B 1.40 / 2.20 OP166W 0.50 / NA 90° RoHS
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP165, OP166 Series Issue C 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com OP165W CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plastics. OP165 (A, B, C, D) OP166W Pin # LED
1 Cathode
2 Anode
OP166 (A, B) INCHES [MILLIMETERS]DIMENSIONS ARE IN:
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP165, OP166 Series Issue C 07/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage and Operating Temperature Range -40o C to +100o C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C Power Dissipation 100 mW(1) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT) Apertured Radiant Incidence OP165A, OP166A 1.95 - mW/cm2 IF = 20 mA(2) PO Radiant Power Output OP165W, OP166W 0.50 - mW IF = 20 mA VF Forward Voltage - - 1.60 V IF = 20 mA IR Reverse Current - - 100 µA VR= 2 V λP Wavelength at Peak Emission - 935 - nm IF = 10 mA B Spectral Bandwidth between Half Power Points - nm IF = 10 mA ∆λP /∆T Spectral Shift with Temperature OP165, OP166 (A, B, C, D) OP165W, OP166W ±0.30 nm/°C IF = Constant θHP Emission Angle at Half Power Points OP165, OP166 (A, B, C, D) OP165W, OP166W Degree IF = 20 mA tr Output Rise Time - 1000 - ns IF(PK)=100 mA, PW=10 µs, D.C.=10.0% tf Output Fall Time - 500 - ns Notes: 1. Derate linearly 1.33 mW/°C above 25°C 2. EE(APT) is a measurement of the average apertured rediant incidence ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured areas.
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. OP165, OP166 Series Issue C 07/2016 Page 4 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Performance OP165, OP166 (A, B, C, D, W) Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 0.6" and 50 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 Forward Current (mA) Typical Forward Voltage (V) -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Optical Power vs IF vs Temp 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current IF (mA) Normalized Optical Power -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Normalized at 20 mA and 20o C Relative Radiant Intensity vs Angular Displacement 0.0 0.2 0.4 0.6 0.8 1.0 -80 -30 20 70 Angular Displacement (Degrees) Relative Radiant Intensity