NPF-TSD-ABD-1 DOMINANT | Alldatasheet

Document overview

  • Manufacturer or author: pROVIDED bY alldatasheet.com(free datasheet download site)
  • PDF pages: 14

Technical content

13/09/2006 V1.01 Features: > Super high brightness surface mount LED. > High flux output; typical 42 lumens > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 18 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument. SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both con - ventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. DATA SHEET: SPNovaLEDTM InGaN Warm White High Lumens : 350 mA © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. Applications: > Automotive: exterior applications, eg: Fog-lamp, Rear Mirror Lighting, etc > Communication: FlashLED > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc DOMINANT TM Semiconductors Innovating Illumination

13/09/2006 V1.02 NPF-TSD-ABD-1

  • NPF-TSD-AB
  • NPF-TSD-AC
  • NPF-TSD-AD InGaN 120 9000.0 - 18000.0 9000.0 - 11250.0 11250.0 - 14000.0 14000.0 - 18000.0 InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination Part Ordering Number Chip Technology / Color Viewing Angle˚ Luminous Intensity @ IF = 350mA (mcd) NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Typ. (V) Vf @ If = 350mA Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Electrical Characteristics at Ta=25˚C Max. (V)Part Number NPF-TSD 3.6 4.0 Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating

13/09/2006 V1.03 InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current Reverse Voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 … +100 -40 … +100 mA mA V V Maximum CCT (K) Correlated Color Temperature (CCT) Minimum CCT (K) A B C 3300 3000 2800 3600 3300 3000 Color Bin Luminous Flux (lm) Correlation Between Luminous Intensity And Luminous Flux Luminous Intensity (mcd) AB AC AD 9000 11250 14000 25.0 32.0 39.0 IV Bin Min Max Min Max 11250 14000 18000 32.0 39.0 50.0 Note: CCT values provided for each of the color bins are an approximation based on correlation. Note: Data provided above is based on approximation.

InGaN Warm White High Lumens: 350 mADOMINANT TM Semiconductors Innovating Illumination 13/09/2006 V1.04 Bin A B C 0.400 0.340 0.420 0.362 0.440 0.383 Cx Cy Cx Cy Cx Cy 0.420 0.362 0.440 0.383 0.460 0.405 0.420 0.408 0.440 0.430 0.460 0.452 0.400 0.387 0.420 0.408 0.440 0.430 White Bin Structure Color Bin Chromaticity coordinate groups are measured with an accuracy of ± 0.01. 1 3 4 0.40 0.36 0.32 0.28 0.24 0.20 0.48 0.44 C

13/09/2006 V1.05 InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination Relative Intensity Vs Forward Current Forward Current, mA Relative Intensity; Normalized at 350mA 0 200 400 600 0.2 0.4 0.6 0.8 1.2 1.4 Relative Flux Vs Forward Current Forward Current, mA Relative Flux; Normalized at 350mA 0 200 400 600 0.2 0.4 0.6 0.8 1.2 1.4 Forward Current Vs Forward Voltage Forward Voltage, V Forward Current, mA 2 2.5 3 3.5 4 4.5 100 200 300 400 500 600 Relative Spectral Emission Wavelength, nm WarmWhite 300 400 500 600 700 800 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Current Vs Ambient Temperature (Rja=40K/W) Ambient Temperature Forward Current, mA 0 10 20 30 40 50 60 70 80 90 100 100 150 200 250 300 350 400 Forward Current Vs Solder Point Temperature Solder Point Temperature Forward Current, mA 0 20 40 60 80 100 100 150 200 250 300 350 400

InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination 13/09/2006 V1.06 o o o o o o o o o o 0.6 0.8 1.0 0.2 0.4 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000 Maximum Permissible Pulse Current, Ta=25 Duty (%); Tp<=0.01 sec Pulse Current, mA 1 10 100 200 300 400 500 600 700 800 900 1000

13/09/2006 V1.07 SPNovaLED TM

  • InGaN Warm White High Lumens : 350 mA Package Outlines InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination

InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination 13/09/2006 V1.08 Note: Metal core circuit board (MCPCB) is highly recommended for applications. Please consult sales and marketing for additional information.

13/09/2006 V1.0 Taping and orientation

  • Reels come in quantity of 2000 units.
  • Reel diameter is 330 mm. InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination

13/09/2006 V1.010 Packaging Specification InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination

13/09/2006 V1.011 Packaging Specification Moisture sensitivity level Barcode label Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Reel Average 1pc SPNovaLED 1 completed bag (2000pcs) 0.034 190 ± 10Weight (gram) Cardboard Box Dimensions (mm) Empty Box Weight (kg) 416 x 516 x 476 20 reels MAXLarge For SPNovaLED TM Reel / Box Quantity / Box (pcs)Cardboard Box Size 1.74 40,000 MAX DOMINANT Semiconductors LOT NO : lotno PART NO : partno QTY : qty S/N : xxx D/C: xxxx GROUP : group Weight (gram) 0.188 800 ± 10 ROHS Compliant PB Free InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination DOMINANT TM Semiconductors

13/09/2006 V1.012 Recommended Sn-Pb IR-Reflow Soldering Profile 275 250 225 200 175 150 125 100 0 50 100 150 200 183˚C Ramp-up 3˚C/sec max. 235-240˚C 10-30s 60-150s Ramp- down 6˚C/sec max.Preheat 60-120s 360s max Time (sec) Temperature (˚C) Classification Reflow Profile (JEDEC J-STD-020C) 0 50 100 150 200 300 250 225 200 175 150 125 100 275Temperature (˚C) Classification Reflow Profile (JEDEC J-STD-020C) Ramp-up 3˚C/sec max. 255-260˚C 10-30s 60-150s Ramp- down 6˚C/sec max. Preheat 60-180s 480s max 217˚C Recommended Pb-free Soldering Profile InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination

Revision History

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Semiconductors . Page Subjects Initial Release Date of Modification

13 Sep 2006

InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination 13/09/2006 V1.013

Please contact us for more information: Head Quarter DOMINANT Semiconductors Sdn. Bhd. Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia Tel: (606) 283 3566 Fax: (606) 283 0566 E-mail: sales@dominant-semi.com DOMINANT China Sales Office E-mail: sales_china@dominant-semi.com DOMINANT Korea Sales Office DOMINANT Semiconductors Korea Inc. #709, Yatap Leaders Bldg., 342-1, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, 463-828 Korea Tel: 82-31-701-5203 Fax: 82-31-701-5204 E-mail: sales_korea@dominant-semi.com DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mADOMINANT TM Semiconductors Innovating Illumination About Us DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as in- dustrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com.