NP4271 NISSHINBO | Alldatasheet
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Technical content
40 V IO = 500mA LDO With Watchdog Timer and Reset
- 1 - Ver.1.0 FEATURES GENERAL DESCRIPTION ⚫ AEC-Q100 Grade 1 ⚫ Fast transient response ⚫ Wide operating voltage 4.0 V to 40 V ⚫ Wide operating temperature Ta = −40°C to 125°C ⚫ Output voltage accuracy VO ±2.0% (Ta = −40°C to 125°C) ⚫ Output voltage 3.3V, 5.0V ⚫ Window detection voltage ⚫ Low-side detection voltage VDETL ±2% ⚫ High-side detection voltage VDETH ±5% ⚫ Output current 500 mA ⚫ ON/OFF control ⚫ Watchdog time setting by external capacitor ⚫ Ceramic capacitor compatible ⚫ Undervoltage lockout ⚫ Thermal shutdown ⚫ Overcurrent protection ⚫ Package HSOP-8-AC The NP4271 is a using Bi-CMOS process, IO = 500 mA low dropout regulator with watchdog timer and reset functions. The output voltage is detected by window detection that can detect the high-side voltage and low-side voltage. The NP4271 offers outstanding high output voltage accuracy that guaranteed ±2% under the conditions of VIN = VO+ 1V to 40 V, IO = 5 mA to 500 mA, and Ta = −40°C to 125°C. This feature makes the device well suited as automotive ECUs and industrial applications. HSOP-8-AC ⚫ Automotive ECUs ⚫ Industrial equipment 【Ripple Rejection Ratio vs. Input Transient Response Characteristics Example]
APPLICATIONS
4.8 4.9 5.1 5.2 5.3 5.4 5.5 5.6 -50 -40 -30 -20 -10 Output Voltage [V] Input Voltage [V] Time [msec] NP4271AC501AE2P Input Transient Responce Co=2.2µF Co=22µF Input Voltage Output Voltage 100 0.001 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio [dB] Output Current [mA] NP4271AC501AE2P Ripple Rejection Ratio vs Output Current 1kHz 10kHz @Ta=25C VIN=6.0V ein=200mVrms CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 2 - Ver.1.0 ■ PRODUCT NAME INFORMATION NP4271 aa bbb c dd e Description of configuration Composition Item Description aa Package code AC: HSOP-8-AC bbb Option Output Voltage / High side Detection Voltage / Low side Detection Voltage Discrimination Codes c Version Indicates whether the High side detection function is enabled or disabled. dd Packing Insert Direction. Refer to the packing specifications. e Grade Indicates the quality grade. P: Automotive Version composition c High side Detection Function A ✓ B - Combination configuration composition bbbc Output voltage Low side detect voltage High side detect voltage High side detect function 301B 3.3V 3.0V - - 501A 5.0V 4.6V 5.6V ✓ 502A 5.0V 4.1V 5.6V ✓ Note: Contact our sales representatives for other voltages. Grade e Applications Operating Temperature Range Test Temperature P Chassis, Body control and In-vehicle −40°C to 125°C 25°C, 125°C ■ ORDER INFORMATION PRODUCT NAME PACKAGE RoHS HALOGEN- FREE PLATING COMPOSITION WEIGHT (mg) QUANTITY PER REEL (pcs/reel) NP4271AC501AE2P HSOP-8-AC ✓ ✓ Sn-Ag 81 1000 NP4271AC502AE2P HSOP-8-AC ✓ ✓ Sn-Ag 81 1000 NP4271AC301BE2P HSOP-8-AC ✓ ✓ Sn-Ag 81 1000
- 3 - Ver.1.0 ■ PIN DESCRIPTIONS NP4271 HSOP-8-AC Pin Configuration Pin No. Pin Name I/O Description
1 VIN Power Power supply input pin
Connect a capacitor between the VIN pin and GND.
2 CONTROL I
It can be set to active state with "High" input and shutdown state with "Low" input. It pulls down with a constant current inside the IC.
3 VRO O
Output pin for the voltage detector and watchdog timer. Pulled up to the VOUT node inside the IC.
4 GND GND Ground pin
5 CW -
Time setting pin by external capacitor Connect a capacitor that sets the output delay time of the voltage detector, monitoring time of the watchdog timer, and reset time.
6 CLK I Clock input pin
This pin is for inputting the clear pulse of the watchdog timer. 7 N.C. - Not internally connected It is electrically open inside the IC. Electrically open or any voltage on the printed circuit board.
8 VOUT O Output pin
Connect a capacitor between the VOUT pin and GND The potential of the tab on the back of the IC is GND. It is recommended to solder the tab to the printed circuit board and connect it to GND potential. Otherwise, the mounting strength will be weak and the heat dissipation will be poor. VOUT N.C. CLK CW VIN CONTROL VRO GND Top View
- 4 - Ver.1.0 ■ ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Input Voltage VIN −0.3 to 45 V Control Pin Voltage VCONT −0.3 to 45 V Output Voltage VOUT −0.3 to VIN 17 (1) V Reset Output Voltage (2) VRO −0.3 to 45 V Clock Input Voltage VCLK −0.3 to 6.0 V CW Pin Voltage VCW −0.3 to 6.0 V Junction Temperature Range (3) Tj −40 to 150 °C Storage Temperature Range Tstg −50 to 150 °C (1) When the input voltage is less than 17 V, the absolute maximum output voltage is equal to the input voltage. If input voltage exceeds 17V, rated output voltage is 17V (2) The reset output pin is pulled up to the VOUT pin with a resistor inside the IC. If a voltage higher than the VOUT set voltage is applied to the reset output terminal, the VOUT pin voltage may exceed the set voltage. In that case, be careful not to exceed the maximum operating voltage of the circuit downstream of the VOUT line. (3) Calculate the power consumption of the IC from the operating conditions, and calculate the junction temperature with the thermal resistance. Please refer to "Thermal characteristics" for the thermal resistance under our measurement board conditions. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.
- 5 - Ver.1.0 ■ THERMAL CHARACTERISTICS Package Parameter Measurement result Unit HSOP-8-AC Thermal Resistance (ja) 2-Layer / 4-Layer Thermal Characterization Parameter (ψjt) 2-Layer / 4-Layer ja：Junction-to-Ambient Thermal Resistance ψjt：Junction-to-Top Thermal Characterization Parameter (4) 2-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 2 -layer FR-4). (5) 4-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 4 -layer FR-4). (For 4-layer: Applying 74.2 mm × 74.2 mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5 as reference data). ■ POWER DISSIPATION -AMBIENT TEMPERATURE CHARACTERISTICS 500 1000 1500 2000 2500 3000 -50 -25 0 25 50 75 100 125 150 Power Dissipation PD [mW] Temperature : Ta [ºC] HSOP-8-AC Power Dissipation (Ta = -40ºC to 125ºC, Tj=150ºC) (5) On 4_Layers Board (4) On 2_Layers Board
- 6 - Ver.1.0 ■ ELECTROSTATIC DISCHARGE(ESD) PROTECTION VOLTAGE Conditions Protection Voltage HBM C = 100 pF, R = 1.5 kΩ ±2000 V CDM ±1000 V ELECTROSTATIC DISCHARGE RATINGS The electrostatic discharge test is done based on JEDEC JS001 and JS002. ■ RECOMMENDED OPERATING CONDITIONS Symbol Ratings Unit Input Voltage VIN 4.0 to 40 V Control Pin Voltage VCONT 0 to 40 V Output Current Range IOUT 0 to 500 mA Operating Temperature Range Ta −40 to 125 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
- 7 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS VIN = VO + 1 V, CIN = 1.0 µF, CO = 2.2 µF, unless otherwise specified. For parameter that do not describe the temperature condition, the MIN/MAX value under the condition of −40 °C ≤ Ta ≤ 125 °C is described. Parameter Symbol Conditions MIN TYP MAX Unit GENERAL CHARACTERISTICS Operating Current ISS WDT enabled, Ta = 25°C - 120 160 µA WDT enabled - - 180 Operating Current at OFF-State IQ(OFF) VCONT = 0 V, Ta = 25°C - - 1 µA VCONT = 0 V - - 1 Control Current ICONT VCONT = 1.6 V, Ta = 25°C - 0.5 3 µA VCONT = 1.6 V - - 3 Control Voltage at ON-State VCONT(ON) Ta = 25°C 1.6 - - V 1.6 - - Control Voltage at OFF-State VCONT(OFF) Ta = 25°C - - 0.6 V - - 0.6 UVLO Release Voltage VUVLO VIN = L to H, Ta =25°C 2.3 2.7 3.1 V VIN = L to H 2.2 - 3.2 UVLO Hysteresis Voltage VHYS VIN = H to L, Ta = 25°C 200 550 - mV VIN = H to L 200 - -
- 8 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS ( LDO REGULATOR ) VIN = VO + 1 V, CIN = 1.0 µF, CO = 2.2 µF, unless otherwise specified. For parameter that do not describe the temperature condition, the MIN/MAX value under the condition of −40 °C ≤ Ta ≤ 125 °C is described. Parameter Symbol Conditions MIN TYP MAX Unit LDO REGULATOR Output Voltage VO VIN = VO + 1V to 40V, IO = 5 mA to 500 mA, Ta = 25°C x0.99 - x1.01 V VIN = VO + 1V to 40V, IO = 5 mA to 500 mA x0.98 - x1.02 Output Current IO mA VO × 0.9 500 - - Line Regulation VO/VIN VOUT = 5V, VIN = VO + 1V to 40V, IO = 30mA, Ta = 25°C - - 16 mV VOUT = 3.3V, VIN = VO + 1V to 40V, IO = 30mA, Ta = 25°C - - 11 VOUT = 5V, VIN = VO + 1V to 40V, IO = 30mA - - 30 VOUT = 3.3V, VIN = VO + 1V to 40V, IO = 30mA - - 20 Load Regulation VO/IO VOUT = 5V, IO = 0mA to 500mA, Ta = 25°C - - 50 mV VOUT = 3.3V, IO = 0mA to 500mA, Ta = 25°C - - 33 VOUT = 5V, IO = 0mA to 500mA - - 60 VOUT = 3.3V, IO = 0mA to 500mA - - 40 Ripple Rejection RR VOUT = 5V, VIN = VO + 1V, Ta = 25°C, ein = 200mVrms, f = 1kHz, IO = 10mA - 68 - dB VOUT = 3.3V, VIN = VO + 1V, Ta = 25°C, ein = 200mVrms, f = 1kHz, IO = 10mA - 71 - Dropout Voltage VIO IO = 300mA, VOUT = 5.0V, V IO = 300mA, VOUT = 5.0V - - 0.57 IO = 300mA, VOUT = 3.3V, Ta = 25°C - - 1.0 IO = 300mA, VOUT = 3.3V - - 1.0 Output Voltage Temperature Coefficient VO/Ta IO = 30mA - ±50 - ppm/°C
- 9 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS (VOLTAGE DETECTOR) VIN = VO + 1 V, CIN = 1.0 µF, CO = 2.2 µF, unless otherwise specified. For parameter that do not describe the temperature condition, the MIN/MAX value under the condition of −40 °C ≤ Ta ≤ 125 °C is described. Parameter Symbol Conditions MIN TYP MAX Unit VOLTAGE DETECTOR Low-Side Detection Voltage VDETL Ta = 25°C x0.99 - x1.01 V x0.98 - x1.02 High-Side Detection Voltage (6) VDETH Ta = 25°C x0.97 - x1.03 V x0.95 - x1.05 Hysteresis Voltage at Low-Side Release VHYS Ta = 25°C 65 100 135 mV 65 - 135 Average Temperature Coefficient of Detection Voltage ∆VDET / Ta - ±50 - ppm/C CW Pin Charging Current at Delay Hold ICWD VCW = 0.5V, Ta = 25°C 4.8 6 7.2 µA VCW = 0.5V 4.8 - 7.2 CW Pin Threshold Voltage at Reset Release VTCWD Ta = 25°C - 1.0 - V Output Delay Hold Time tD CW = 0.01µF, VRO = L to H, Ta = 25°C 1.44 1.70 1.96 ms CW = 0.01µF, VRO = L to H 1.36 - 2.04 Reset Reaction Time tRR Low-side detected, VRO = H to L, Ta = 25°C - - 25 µs High-side detected, VRO = H to L, Ta = 25°C - - 25 Low-Level Reset VROL VO = VDETL − 0.5V, ISINK = (VDETL − 0.5V) / RPU, Ta = 25°C - 0.02 0.2 V VO = VDETL − 0.5 V, ISINK = (VDETL − 0.5V) / RPU, - - 0.2 V Reset output section operating voltage VOPL Ta = 25°C 0.8 - - V 0.8 - - Reset Output Voltage at Start-Up VR O U V VIN start-up, Ta = 25°C - 0.05 - V Pull-Up Resistor RPU Ta = 25°C - 100 - kΩ (6) A version
- 10 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS (WATCH DOG TIMER) VIN = VO + 1 V, CIN = 1.0 µF, CO = 2.2 µF, unless otherwise specified. For parameter that do not describe the temperature condition, the MIN/MAX value under the condition of −40 °C ≤ Ta ≤ 125 °C is described. Parameter Symbol Conditions MIN TYP MAX Unit WATCHDOG TIMER Clock Input High-Level VTCKH VOUT = 5V, Ta = 25°C 4.0 - - V VOUT = 3.3V, Ta = 25°C 2.6 - - VOUT = 5V 4.0 - - VOUT = 3.3V 2.6 - - Clock Input Low-Level VTCKL VOUT = 5V, Ta = 25°C - - 1.0 V VOUT = 3.3V, Ta = 25°C - - 0.7 VOUT = 5V - - 1.0 VOUT = 3.3V - - 0.7 Clock Input Pulse Width tCKW Ta = 25°C 0.5 - - µs 0.5 - - Clock Input Cycle tCK Ta = 25°C 1.0 - - µs 1.0 - - CW Pin Discharge Current ICW VCW = 0.5 V, Ta = 25°C 1.6 2 2.4 µA VCW = 0.5 V 1.6 - 2.4 CW Pin Charging Current ICWL VCW = 0.5V, Ta = 25°C 4.8 6 7.2 µA VCW = 0.5V 4.8 - 7.2 High-Side Threshold Voltage VTCWH Ta = 25°C - 1.0 - V Low-Side Threshold Voltage VTCWL Ta = 25°C - 0.2 - WDT Monitoring Time tWD CW = 0.01 µF, Ta = 25°C 3.4 4.0 4.6 ms WDT Reset Time tWR CW = 0.01 µF, Ta = 25°C 1.10 1.30 1.50 ms CW = 0.01 µF 1.04 - 1.56
- 11 - Ver.1.0 ■ TYPICAL APPLICATION CIRCUIT ■ BLOCK DIAGRAMS NP4271 Block Diagram NP4271 VIN CONTROL VRO GND CW CLK VOUT Micro Controller VDD CLK RESET GND VIN 1.0μF 2.2μF Thermal Protection Current Limit VIN Vref1 VRO CW CLK VOUT GND CW Control 2CONTROL REG Vref2 Low Side Reset High Side Reset UVLO
- 12 - Ver.1.0 ■ MARKING SPECIFICATION : Product Code … Refer to Part Marking List ⑪: Lot Number … Alphanumeric Serial Number HSOP-8-AC Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor before attempting to use AOI. NP4271 Part Marking List ① ② ③ ④ ⑤ ⑥ ⑦ ⑧ ➈ ➉ ⑪ 1Pin NP4271AC501AE2P 4 2 7 1 0 1 P A NP4271AC502AE2P 4 2 7 1 0 2 P A NP4271AC301BE2P 4 2 7 1 0 0 P B
- 13 - Ver.1.0 ■ APPLICATION NOTES
- Internal Equivalent Circuit Diagram of Pin CONTROL pin VRO pin CW pin CLK pin VOUT pin CONTROL VIN VOUT VRO CW Int_Reg CLK VOUT VIN VOUT
- 14 - Ver.1.0
- Evaluation Board / PCB Layout NP4271 CONTROL GND VRO CW CLK VIN VOUT NC CIN COUT CCW
- 15 - Ver.1.0 Input Capacitor (CIN) CIN has the effect of preventing oscillation when the power supply impedance is High or when the VIN and GND wires are long. Therefore, connect a CIN of 1.0 μF or more between the VIN and GND terminals and make the wiring as short as possible. Output Capacitor (CO) CO is required to provide phase compensation for the error amplifier with an integrated regulator, and the capacitance value and the equivalent series resistance (ESR) affect the stability of the circuit. The ESR should be in the range of the Stable Region in the Equivalent Series Resistance vs Output Current characteristic example. Use of a CO with an ESR below the recommended capacitance value or outside the stable operation region will degrade the stability of the internal circuit, resulting in increased output noise and ringing, and possible oscillation. For stable operation, a ceramic capacitor with a value of 2.2uF or more, including capacitance value variation, temperature dependence, and DC bias dependence, should be connected between the VOUT pin and the GND pin The larger the capacitance value, the lower the output noise and ripple components, and the smaller the output voltage fluctuation when the output load changes.
- 16 - Ver.1.0 ■ Timing Chart
- Output Delay Time (tD) In order to prevent malfunction due to chattering after the output voltage (VO) exceeds the reset release voltage (VDETL + VHYS), a tD is provided until the reset output pin outputs High. (1) Initial State When the VO is less than the VDETL + VHYS, the CW pin voltage (VCW) is 0 V and VRO (reset output voltage) = Low. The NP4271 has the ability to maintain a Low reset output pin voltage (VROUV typ. 0.05 V) during start-up, even when VIN is below the minimum operating voltage. (2) Start of Output Delay Time If VO exceeds VDETL + VHYS, the CW pin capacitor (CW) is charged with the CW pin charging current (ICWD) (6μA, typ) when voltage is detected, and the tD starts. VRO = Low is maintained during the tD. When VO falls below VDETL + VHYS during CW charging, the state returns to (1) (VCW = 0 V, VRO = Low). (3) Detectable State of the Output Voltage Drop When VCW reaches the CW pin threshold voltage (VTCWH) (1.0V, typical), VRO switches from Low to High. Ic can detect the output voltage drop from the time when VO≥VDETL+VHYS to the time when VRO=High is tD. After VCW reaches VTCWH, capacitor CW is discharged at discharge current (ICW) (2μA, typ) and VCW falls. VOUT (Output Voltage) VRO (RESET Output Voltage) CW (CW pin Voltage) CLK (Clock Input Voltage) GND VOUT VTCK GND +VDETL,VHYSL VTCWH VTCWL VOUT GND VDETL GND tD tWD tWR tCKW VDETL VIN (Input Voltage) GND High VCONT (Control Pin Voltage) GND VCONT(ON) VDETH tCK VCONT(OFF) tRR tRR VOPL tRR tD tRR (1) (2) (4) (7)(4) (3) (5) (6) (8) (9) (11) (10) (10) (8) VOPL VTCKL
- 17 - Ver.1.0
- Watchdog Timer Monitoring Time and Reset Time The watchdog timer monitoring time (tWD) can be set as the time to monitor the clock of a microcontroller or other device.When the rising edge of the clock is not detected within the set time, the reset output pin outputs Low for the period set by the watchdog timer reset time (tWR). (4) Clock Rising Edge Detection Standby State The capacitor CW is discharged by the discharge current (ICW) and monitors the clock rising edge input until the CW pin voltage VCW reaches the lower threshold voltage (VTCWL) (0.2V, typ). The time at which the capacitor CW is discharged from VTCWH to VTCWL is the watchdog timer monitoring (tWD) (5) Clock Rising Edge If Detected When a rising edge of the clock is detected during the monitoring time, the capacitor CW switches from discharging to charging.After that, when the voltage VCW reaches VTCWH, the capacitor CW changes from charging to discharging and starts waiting for clock rising edge detection (4). (6) Clock Rising Edge Is Not Detected If the rising edge of the clock is not detected while the capacitor CW is being discharged, and VCW reaches the lower threshold voltage (VTCWL) (0.2V, typ), the VRO switches from High to Low and begins charging the capacitor CW. The time at which the capacitor CW is charged from VTCWL to VTCWH is the watchdog timer reset time (tWR). (7) Watchdog Timer Reset Output Start charging the capacitor CW and then hold VRO=Low until the voltage VCW reaches VTCWH. When VCW reaches VTCWH, it switches from VRO = Low to High.
- Output Voltage Error Detection (8) When output voltage VO < Low side detection voltage VDETL The time of watchdog timer monitoring (tWD) and reset (tWR) become VRO = Low when VO falls below VDETL, and the CW pin discharges the capacitor (CW) rapidly and becomes VCW = 0 V. After becoming a VRO = Low it returns to the initial state of (1). Low side detection has hysteresis VHYS. (9) When output voltage VO > High side detection voltage VDETH While the watchdog timer is monitoring the clock, if VO becomes higher than VDETH, VRO = Low. Also, the capacitor CW on the CW pin is rapidly discharged and VCW = 0V. After VRO = Low, it returns to the initial state (1). High side detection has no hysteresis.
- Reset Delay time (tRR) (10) The time from detection of the low side detection voltage VDETL and High side detection voltage VDETH until VRO = Low is the reset delay time (tRR) (10μs, typ) (11) When the output voltage VO drops, VRO = Low is held until the voltage VO becomes the reset output operating voltage (VOPL) (about 0.8V).
- When the Watchdog Timer is Not Used The watchdog timer can be stopped by forcing the CW pin voltage (VCW) to High-level. At that time, the reset functions (VDETL, VDETH) by output voltage monitoring is also stopped and VRO = High is maintained until the VCW falls below the The CW pin voltage (VCW) can be forced to High level at any timing. If the CW pin voltage (VCW) is stopped being forced to a High level, the capacitor CCW begins to discharge and holds VRO = High until VCW falls below the lower threshold hold voltage (VTCWL) (0.2 V, typ).
- Time setting capacitor (CW) constant setting method The time setting capacitor (CW) sets the output delay time (tD), watchdog timer monitoring time (tWD), and watchdog timer reset time (tWR). The CW setting method for each episode is as follows. To calculate the CW use Equation 2, Equation 6, or Equation 10. To calculate time from CW use Equation 3, Equation 7, or Equation 11. To calculate time dispersion use Equation 4, Equation 8, or Equation 12. Capacitor CW can be set in the range of 0.001µF to 47µF.
- 18 - Ver.1.0
- Setting the CW from the Output Delay Time (tD) The tD is the period from when CW pin capacitor (CW) is charged with ICW until VCW reaches 0 V to VTCWD (threshold voltage). Therefore, the CW value from tD can be estimated as follows: CW = 𝐼𝐶𝑊𝐷 𝑉𝑇𝐶𝑊𝐷 Where charging current (ICWD) is 6 μA (typ) and threshold voltage (VTCWD) is 1.0 V (typ), the CW is calculated by the below equation: CW = 6×10-6 1.0 𝑡𝐷 = (6 × 10-6)･𝑡𝐷 [F] ・・・・・・Equation <2> (The unit of tD is [s].) The tD can be calculated from CW according to the following equation: 𝑡𝐷 = 𝐶𝑊 𝐼𝐶𝑊𝐷 ⋅ 𝑉TCWD 𝐶𝑊 6×10−6 [s] ・・・・・・Equation <3> (The unit of CW is [F].) Calculate the tD dispersion using the ration of CW from the minimum and maximum values when CW = 0.01 μF is connected: 𝑡𝐷 = 𝑡𝐷(CW = 0.01µF) × 𝐶W 0.01×10-6 [ms] ・・・・・・Equation <4> (The unit of CW is [F].) For example, when CW = 1 μF and Ta = −40C to 125C, 136 ms ≤ tD ≤ 204 ms.
- 19 - Ver.1.0
- Setting the CW from the Watchdog Timer Monitoring Time (tWD) The tWD is the period from when VCW reaches threshold voltage (VTCWD) or High-side threshold voltage (VTCWH) until VCW = VTCWL (low-side threshold voltage) due to discharge by ICW. Therefore, the CW value from tWD can be estimated as follows: CW = 𝐼𝐶𝑊 𝑉𝑇𝐶𝑊𝐻−𝑉𝑇𝐶𝑊𝐿 ※VTCWH is used here because VTCWD = VTCWH. Since the discharge current (ICW) is typically 2μA and the threshold voltages are VTCWH = 1.0 V (typ) and VTCWL = 0.2 V (typ), CW can be easily calculated using the following equations: CW = 2×10-6 1.0-0.2 ⋅𝑡𝑊𝐷 =(2.5×10-6)∙𝑡𝑊𝐷 [F] ・・・・・・Equation <6> (The unit of tWD is [s].) The tWD can be calculated from CW according to the following equation: 𝑡𝑊𝐷 = 𝐶𝑊 𝐼𝐶𝑊 ･(𝑉𝑇𝐶𝑊𝐻 − 𝑉𝑇𝐶𝑊𝐿) = (0.4 × 106) ∙ 𝐶𝑊 [s] ・・・・・・Equation <7> (The unit of CW is [F].) Calculate the tWD dispersion using the ration of CW from the minimum and maximum values when CW = 0.01 μF is connected: tWD = 𝑡𝑊𝐷 (Cw=0.01μF )× Cw 0.01×10-6 [ms] ・・・・・・Equation <8> (The unit of CW is [F].) For example, when CW = 1 μF and Ta = −40C to 125C, 320 ms ≤ tWD ≤ 480 ms.
- 21 - Ver.1.0
- Undervoltage Lockout (UVLO) The NP4271has a UVLO circuit that prevents malfunction by locking out the output when VIN is below the UVLO release voltage (2.7 V, typ). When the input voltage drops below the UVLO detection voltage (2.15 V, typ)*, the output voltage falls. *UVLO detection voltage (2.15 V, typ) = UVLO release voltage (2.7 V, typ) − UVLO hysteresis voltage (550 mV, typ)
- Control Function The CONTROL pin can be set to active state by inputting "High" or shutdown state by inputting "Low".The CONTROL pin is pulled down internally with Typ. 3.2MΩ. There is no problem if voltage is applied to the CONROL pin before the VIN pin. At startup, input "High".
- Thermal Shutdown Function When the IC junction temperature (Tj) exceeds the thermal shutdown detection temperature (Typ.175 °C), the output voltage (VOUT) is cut off to suppress self-heating. After that, when the junction temperature (Tj) falls below the thermal shutdown release temperature (Typ.140 °C), it will restart. When restarting, the operation is the same as starting with the CONTROL pin. The thermal shutdown function prevents the IC from fuming and ignition but does not ensure the IC’s reliability or keep the IC below the absolute maximum ratings. The thermal shutdown function does not operate on the heat generated by other than the normal IC operation such as latchup and overvoltage application. The thermal shutdown function operates in a state over the absolute maximum ratings, therefore the thermal shutdown function should not be used for a system design.
- Overcurrent protection function The NP4271 has built-in overcurrent protection with foldback characteristics. The overcurrent protection function works at a minimum of 500 mA, so the load current should be designed to be less than that.
- High/Low monitoring (window detection) function When the output voltage of the voltage regulator exceeds the high or low side (A version) detection voltage, VRO = Low (B version is only for low side detection); there is no hysteresis for high side detection. 0 1 2 3 4 5 6 Output Voltage [V] Input Voltage [V] NP4271AC501AE2P Output Voltage vs Input Voltage @Ta=25C Io=30mA CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 22 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 4.8 4.85 4.9 4.95 5.05 5.1 5.15 5.2 4.5 5 5.5 6 6.5 Output Voltage [V] Input Voltage [V] NP4271AC501AE2P Output Voltage vs Input Voltage Io=0 Io=5mA Io=30mA Io=500mA @Ta=25C CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0 250 500 750 1000 1250 1500 Output Voltage [V] Output Current [mA] NP4271AC501AE2P Output Voltage vs Output Current -40°C 25°C 125°C @VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 100 200 300 400 500 600 700 800 0 100 200 300 400 500 Ground Pin Current [μA] Output Current [mA] NP4271AC501AE2P Ground Pin Current vs Output Current @Ta=25C VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0 0.5 1 1.5 2 2.5 Output Voltage [V] Control Voltage [V] NP4271AC501AE2P Output Voltage vs Control Voltage @Ta=25C VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0 10 20 30 40 Control Current [µA] Control Voltage [V] NP4271AC501AE2P Control Current vs Control Voltage @Ta=25C VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 45 Operating Current [μA] Input Voltage [V] NP4271AC501AE2P Operating Current vs Input Voltage @Ta=25C VIN=6.0V VRO=High CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 23 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 100 200 300 400 500 Dropout Voltage [V] Output Current [mA] NP4271AC501AE2P Dropout Voltage vs Output Current @Ta=25C CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 250 500 750 1000 1250 1500 0 10 20 30 40 Peak Output Current [mA] Input Voltage: [V] NP4271AC501AE2P Peak Output Current vs Input Voltage @Ta=25C VO=4.5V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0.001 0.01 0.1 100 0.001 0.01 0.1 1 10 100 Equivalent Series Resistance [Ω] Output Current [mA] NP4271AC501AE2P Equivalent Series Resistance vs. Output Current ― VIN=6.0V ― VIN=6.0~40V @Ta=25C CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 500 STABLE REGION 100 0.01 0.1 1 10 100 Ripple Rejection Ratio [dB] Frequency [kHz] NP4271AC501AE2P Ripple Rejection Ratio vs Frequency Io=0 Io=10mA Io=100mA Io=500mA @Ta=25C VIN=6.0V ein=200mVrms CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 100 200 300 400 500 ΔOutput Voltage [mV] Output Current [mA] NP4271AC501AE2P ΔOutput Voltage vs Output Current @Ta=25C VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 100 0.001 0.01 0.1 1 10 100 1000 Ripple Rejection Ratio [dB] Output Current [mA] NP4271AC501AE2P Ripple Rejection Ratio vs Output Current 1kHz 10kHz @Ta=25C VIN=6.0V ein=200mVrms CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 24 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 4.9 4.92 4.94 4.96 4.98 5.02 5.04 5.06 5.08 5.1 -50 0 50 100 150 Output Voltage [V] Temperature [°C] NP4271AC501AE2P Output Voltage vs Temperature Io=5mA Io=30mA Io=500mA @Ta=25C VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 Control Voltage [V] Temperature[oC] NP4271AC501AE2P Control Voltage vs Temperature @VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) VCONT_ON 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 Control Current:ICONT (μA) Temperature: (oC) NP4271AC501AE2P Control Current vs Temperature @VCONT=1.6V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 1 2 3 4 Reset Low Output Voltage [V] Sink Current [mA] NP4271AC501AE2P Reset Low Output Voltage vs Sink Current -40°C 25°C 150°C 0 1 2 3 4 5 6 Reset Output Voltage [V] Output Voltage [V] NP4271AC501AE2P Reset Output Voltage vs Output Voltage @Ta=25C CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 110 130 150 170 190 -50 -25 0 25 50 75 100 125 150 Operating Current [µA] Temperature [oC] NP4271AC501AE2P Operating Current vs Temperature VIN=40V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 25 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 200 400 600 800 1000 1200 1400 1600 1800 -50 -25 0 25 50 75 100 125 150 Output Peak Current [mA] Temperature[oC] NP4271AC501AE2P Output Peak Current vsTemperature @VIN=6.0V VO=4.5V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 Dropout Voltage [V] Temperature[oC] NP4271AC501AE2P Dropout Voltage vs Temperature @IO=300mA CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) -50 0 50 100 150 200 Output Voltage [V] Temperature [oC] NP4271AC501AE2P Output Voltage vs Temperature @VIN=6.0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) 200 400 600 800 1000 1200 1400 1600 1800 -50 0 50 100 150 Short Circuit Current [mA] Temperature [°C] NP4271AC501AE2P Short Circuit Current vs Temperature @VIN=6.0V VO=0V CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) -20 -15 -10 -50 -25 0 25 50 75 100 125 150 Line Regulation [mV] Temperature[oC] NP4271AC501AE2P Line Regulation vs Temperature @VIN=6.0-40V IO=30mA CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic) -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 -50 -25 0 25 50 75 100 125 150 ΔOutput Voltage [mV] Temperature [oC] NP4271AC501AE2P ΔOutput Voltage vs Temperature @VIN=6.0V IO=0-500mA CIN=1.0μF(Ceramic) CO=2.2μF(Ceramic)
- 26 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 4.50 4.55 4.60 4.65 4.70 -50 -25 0 25 50 75 100 125 150 Low-side Detection Voltage [V] Temperature [oC] NP4271AC501AE2P Low-side Detection Voltage vs Temperature 5.50 5.55 5.60 5.65 5.70 -50 -25 0 25 50 75 100 125 150 High-side Detection Voltage[V] Temperature [oC] NP4271AC501AE2P High-side Detection Voltage vs Temperature 100 110 120 130 140 150 -50 -25 0 25 50 75 100 125 150 Pull Up Resistance [kΩ] Temperature [oC] NP4271AC501AE2P Pull Up Resistance vs Temperature 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 100 125 150 WDT Monitor Time [ms] Temperature [oC] NP4271AC501AE2P WDT Monitor Time vs Temperature @CW=0.01.μF(Ceramic) 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 -50 -25 0 25 50 75 100 125 150 Output Delay Hold Time [ms] Temperature [oC] NP4271AC501AE2P Output Delay Hold Time vs Temperature @CW=0.01.μF(Ceramic) 100 105 110 115 120 125 -50 -25 0 25 50 75 100 125 150 Hysteresis Voltage [mV] Temperature [oC] NP4271AC501AE2P Hysteresis Voltage of Low-side Detection
- 27 - Ver.1.0 ■ TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 WDT Reset Time [ms] Temperature [oC] NP4271AC501AE2P WDT Reset Time vs Temperature @CW=0.01.μF(Ceramic) -50 -25 0 25 50 75 100 125 150 Reset Reaction Time [μs] Temperature [oC] NP4271AC501AE2P Reset Reaction Time vs Temperature tRR_VDETL tRR_VDETH 0.00 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 Low Level Reset Output Voltage [V] Temperature [oC] NP4271AC501AE2P Low Level Reset Output Voltage vs Temperature 4.8 4.9 5.1 5.2 5.3 5.4 5.5 5.6 -50 -40 -30 -20 -10 Output Voltage [V] Input Voltage [V] Time [msec] NP4271AC501AE2P Input Transient Responce Co=2.2µF Co=22µF Input Voltage Output Voltage 4.8 4.9 5.1 5.2 5.3 5.4 5.5 5.6 -1000 -800 -600 -400 -200 200 400 600 Output Voltage [V] Output Current [mA] Time [msec] NP4271AC501AE2P Load Transient Response Co=2.2µF Co=22µF Output Current Output Voltage @Ta=25℃ VIN=13.5V Ia=200mA~400mA CIN=1.0μF(Ceramic) NP4271AC501AE2P ON/OFF Transient Responce VIN=6.0V , IO=30mA , CO=2.2μF(Ceramic) 0 0.2 0.4 0.6 0.8 Time [msec] Control Pin Voltage [V] Output Voltage [V] Output Voltage Control Voltage @Ta=25℃
- 28 - Ver.1.0 ■ REVISION HISTORY Date Revision Contents of Changes JUN 1 2024 Ver. 1.0 Initial release
Package Information
HSOP-8-AC PI-HSOP-8-AC-01-E-A ■ PACKAGE DIMENSIONS UNIT: mm ■ EXAMPLE OF SOLDER PADS DIMENSIONS UNIT: mm <Instructions for mounting> Please be careful when mounting, because there is a standoff on the backside electrode of the package.
HSOP-8-AC PI-HSOP-8-AC-01-E-A ■ PACKING SPEC UNIT: mm (1) Taping dimensions / Insert direction 5.5±0.05 4.0±0.1 8.0±0.1 2.0±0.05 1.5 2.05±0.1 6.7±0.1 5.55±0.1 2.1±0.1 Insert direction (E2) 0.3±0.1 12±0.3 +0.1 1.75±0.1 (2) Taping state Feed direction more than 160mm 1000pcs/reel Sealing with covering tape DevicesTrailer part Leader part more than 400mm
HSOP-8-AC PI-HSOP-8-AC-01-E-A (3) Reel dimensions 1321 15.4 180 -3.0 ±1.0±1.0 ±1.0 ±0.2 ±0.5 ±0.8 (4) Peeling strength Peeling strength of cover tape ・Peeling angle 165 to 180°degrees to the taped surface. ・Peeling speed 300mm/min ・Peeling strength 0.1 to 1.3N 165 to 180 ° Direction to pull Feed direction Carrier tape Cover tape
HSOP-8-AC PI-HSOP-8-AC-01-E-A (5) Packing state Box size：185×185×20 <Label> Product name, Quantity, Lot No, Mark ■ HEAT-RESISTANCE PROFILES Reflow profile 3°C /s MAX. 217°C 200°C 150°C 255°C 260°C MAX. 30s MAX. 6°C /s MAX. 60-120s 60-150s Time(s) Package Surface Temperature(°C)
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- Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with y our company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representati ves should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/