NP0H3A3 PANASONIC | Alldatasheet
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Publication date: August 2003 SJJ00282AED NP0H3A3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For digital circuits ■Features
- SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half
- Maximum package height (0.4 mm) contributes to develop thinner equipments ■Basic Part Number
- UNR11A3 × UNR12A3 ■Absolute Maximum Ratings Ta = 25°C Marking Symbol: 3C Internal Connection Unit: mm 1: Emitter (Tr1) 4: Collector (Tr2) 2: Base (Tr2) 5: Base (Tr1) 3: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package 0 to 0.02 1.00±0.04 (0.10) 0.10 1.00±0.05 Display at No.1 lead 0.80±0.05 0.10 (0.35) (0.35) 0.37+0.03 -0.02 0.12+0.03 -0.02 Tr1 Tr2 Parameter Symbol Rating Unit Tr1 Collector-base voltage VCBO −50 V (Emitter open) Collector-emitter voltage VCEO −50 V (Base open) Collector current IC −80 mA Tr2 Collector-base voltage VCBO V (Emitter open) Collector-emitter voltage VCEO V (Base open) Collector current IC mA Overall Total power dissipation * PT 125 mW Junction temperature Tj 125 Storage temperature Tstg −55 to +125 Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
■Electrical Characteristics Ta = 25°C ± 3°C
- Tr1
- Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ 0.2 V Input resistance −30% +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz PT Ta Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.1 mA Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9 V Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 1 kΩ − 0.2 V Input resistance −30% +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz MHz Common characteristics chart 120 140 120 100 Total power dissipation PT (mW) Ambient temperature Ta (°C) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO Characteristics charts of Tr1 −12 −10 −80 −60 −40 −20 Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA Collector current IC (mA) Collector-emitter voltage VCE (V) − 0.1 −10 −100 − 0.01 −10 − 0.1 Ta = 75°C 25°C −25°C IC / IB = 10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −10 −100 250 200 150 100 Ta = 75°C 25°C −25°C VCE = −10 V Forward current transfer ratio hFE Collector current IC (mA) −40 −32 −24 −16 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) −12 −100 −10 VO = −5 V Ta = 25°C Input voltage VIN (V) Output current IO (mA) − 0.1 −10 −100 − 0.1 −100 −10 VO = − 0.2 V Ta = 25°C Output current IO (mA) Input voltage VIN (V)
IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO Characteristics charts of Tr2 Collector-emitter voltage VCE (V) Collector current IC (mA) 5 mA 4 mA 3 mA 2 mA 1 mA IB = 10 mA 9 mA 6 mA 8 mA 7 mA Ta = 25°C 0.1 100 0.01 0.1 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) IC / IB = 10 Ta = 75°C −25°C 25°C 100 Collector current IC (mA) 100 150 200 250 Forward current transfer ratio hFE Ta = 75°C 25°C −25°C VCE = 10 V Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) f = 1 MHz Ta = 25°C 2.0 0.5 1.5 1.0 0.1 Input voltage VIN (V) Output current IO (mA) VO = 5 V Ta = 25°C 100 100 Output current IO (mA) Input voltage VIN (V) VO = 0.2 V Ta = 25°C
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