NP0G3D2 PANASONIC | Alldatasheet
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Transistors with built-in Resistor 1Publication date: July 2002 SJH00051AED NP0G3D2 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) For digital circuits ■ Features
- Two elements incorporated into one package
- Suitable for high density package and downsizing of the equipment
- Automatic insertion with the taping is possible ■ Basic Part Number of Element
- UNR31AT × UNR32AL ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: 3B Internal Connection Unit: mm Parameter Symbol Rating Unit Tr1 Collector to base voltage V CBO −50 V Collector to emitter voltage V CEO −50 V Collector current I C −80 mA Tr2 Collector to base voltage V CBO 50 V Collector to emitter voltage V CEO 50 V Collector current I C 80 mA Overall Total power dissipation * PT 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C 1: Base (Tr1) 4: Collector (Tr2) 2: Base (Tr2) 5: Emitter (Tr1) 3: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm 0 to 0.02 654 1 2 3 1.00±0.05 (0.10) 0.10 1.00±0.05 Display at No.1 lead 0.80±0.050.10 (0.35) (0.35) 0.37+0.03 -0.02 0.12+0.03 -0.02 Tr2 Tr1 46 5
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■ Electrical Characteristics Ta = 25°C ± 3°C
- Tr1
- Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage V CBO IC = 10 µA, IE = 05 0 V Collector to emittter voltage V CEO IC = 2 mA, IB = 05 0V Collector cutoff current I CBO VCB = 50 V, IE = 0 0.1 µA ICEO VCE = 50 V, IB = 0 0.5 Emitter cutoff current I EBO VEB = 6 V, IC = 0 2.0 mA Forward current transfer ratio h FE VCE = 10 V, IC = 5 mA 20 Collector to emitter saturation voltage V CE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V High level output voltage V OH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Low level output voltage V OL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V Input resistance R 1 −30% 4.7 +30% k Ω Resistance ratio R 1 / R2 0.8 1.0 1.2 Gain bandwidth product f T VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz PT Ta Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage V CBO IC = −10 µA, IE = 0 −50 V Collector to emittter voltage V CEO IC = −2 mA, IB = 0 −50 V Collector cutoff current I CBO VCB = −50 V, IE = 0 − 0.1 µA ICEO VCE = −50 V, IB = 0 − 0.5 Emitter cutoff current I EBO VEB = −6 V, IC = 0 − 0.2 mA Forward current transfer ratio h FE VCE = −10 V, IC = −5 mA 80 400 Collector to emitter saturation voltage V CE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V High level output voltage V OH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ− 4.9 V Low level output voltage V OL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V Input resistance R 1 −30% 22 +30% k Ω Resistance ratio R 1 / R2 0.47 Gain bandwidth product f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Common characteristics chart 0 140 6020 80 12040 100 140 120 100 Total power dissipation PT (mW) Ambient temperature Ta (°C)
IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO Characteristics charts of Tr1 −90 −80 −70 −60 −50 −30 −40 −20 −10 Ta = 25°C − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA Collector to emitter voltage VCE (V) Collector current IC (mA) − 0.1 −1 −10 −100 − 0.01 −10 − 0.1 Ta = 75°C 25°C −25°C IC / IB = 10 Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) −1 −10 −100 250 200 150 100 Ta = 75°C 25°C −25°C VCE = −10 V Collector current IC (mA) Forward current transfer ratio hFE f = 1 MHz Ta = 25°C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) − 0.1 −10 VO = −5 V Ta = 25°C Input voltage VIN (V) Output current IO (mA) −1 −10 −100 − 0.1 −100 −10 VO = − 0.2 V Ta = 25°C Output current IO (mA) Input voltage VIN (V)
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IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO Characteristics charts of Tr2 01 2 10826 4 Ta = 25°C IB = 1.0 mA 0.9 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.8 mA 0.7 mA Collector to emitter voltage VCE (V) Collector current IC (mA) −1 −10 −100 0.01
0.1 Ta = 125°C
25°C −25°C IC / IB = 10 Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 200 160 120 180 140 100 Ta = 125°C 25°C −25°C VCE = 10 V Collector current IC (mA) Forward current transfer ratio hFE 04 0 10 30 20 f = 1 MHz Ta = 25°C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 100 VO = 5 V Ta = 25°C Input voltage VIN (V) Output current IO (mA) 1 10 100 0.1 VO = 0.2 V Ta = 25°C Output current IO (mA) Input voltage VIN (V)
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