NP043A2 PANASONIC | Alldatasheet
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1Publication date: April 2004 SJJ00285AED NP043A2 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits ■ Features
- SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half
- Maximum package height (0.4 mm) contributes to develop thinner equipments ■ Basic Part Number
- UNR31A2 + UNR32A2 ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: 7T Internal Connection Unit: mm 0 to 0.02 654 1 2 3 1.00±0.04 (0.10) 0.10 1.00±0.05 Display at No.1 lead 0.80±0.050.10 (0.35) (0.35) 0.37+0.03 -0.02 0.12+0.03 -0.02 Tr1 22 kΩ 22 kΩ R1 22 kΩ 22 kΩ Tr2 1 32 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 05 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 05 0 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio h FE VCE = 10 V, IC = 5 mA 60 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high level V OH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low level V OL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V Input resistance R 1 −30% 22 +30% k Ω Resistance ratio R 1 / R2 0.8 1.0 1.2 Transition frequency f T VCB = 10 V, IE = −1 mA, f = 200 MHz 150 MHz ■ Electrical Characteristics Ta = 25°C ± 3°C
- Tr1 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Parameter Symbol Rating Unit Tr1 Collector-base voltage V CBO 50 V (Emitter open) Collector-emitter voltage V CEO 50 V (Base open) Collector current I C 80 mA Tr2 Collector-base voltage V CBO −50 V (Emitter open) Collector-emitter voltage V CEO −50 V (Base open) Collector current I C −80 mA Overall Total power dissipation P T 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2 SJJ00285AED
Common characteristics chart PT Ta Characteristics charts of Tr1 IC VCE VCE(sat) IC hFE IC ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
- Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.2 mA Forward current transfer ratio h FE VCE = −10 V, IC = −5 mA 60 Collector-emitter saturation voltage V CE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V Output voltage high level V OH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ− 4.9 V Output voltage low level V OL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V Input resistance R 1 −30% 22 +30% k Ω Resistance ratio R 1 / R2 0.8 1.0 1.2 Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ambient temperature Ta (°C) Total power dissipation PT (mW) 0 140 6020 80 12040 100 140 120 100 01 2 10826 4 Collector-emitter voltage VCE (V) Collector current IC (mA) 0.4 mA IB = 1.0 mA0.9 mA0.8 mA 0.5 mA 0.6 mA 0.7 mA 0.3 mA 0.2 mA 0.1 mA Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.01 0.1 1 10 100 25°C Ta = 85°C −25°C IC/IB = 10 Forward current transfer ratio hFE Collector current IC (mA) 0.1 1 10 100 300 200 150 250 100 VCE = 10 V Ta = 85°C −25°C 25°C
Characteristics charts of Tr2 Cob VCB IO VIN VIN IO IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO 02 0 3 0 1051 5 2 5 3 5 4 0 0.1 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) f = 1 MHz Ta = 25°C 0 0.5 1 1.5 2 2.5 3 3.5 4 0.1 100 Input voltage VIN (V) Output current IO (mA) VO = 5 V Ta = 25°C 1001010.1 0.1 Output current IO (mA) Input voltage VIN (V) VO = 0.2 V Ta = 25°C −70 −60 −50 −40 −30 −20 −10 Collector-emitter voltage VCE (V) Collector current IC (mA) − 0.4 mA IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.5 mA − 0.6 mA − 0.7 mA − 0.3 mA − 0.2 mA − 0.1 mA Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) − 0.01 −10 − 0.1 −1 −10 25°C Ta = 85°C −25°C IC/IB = 10 Forward current transfer ratio hFE Collector current IC (mA) −1 −10 −100 200 150 250 100 VCE = −10 V Ta = 85°C −25°C 25°C 02 0 3 0 1051 5 2 5 3 5 4 0 0.1 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) f = 1 MHz Ta = 25°C − 0.1 −100 −10 Input voltage VIN (V) Output current IO (mA) Ta = 25°C −100−10 −1− 0.1 −100 −10 Output current IO (mA) Input voltage VIN (V) VO = − 0.2 V Ta = 25°C
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