NH2301

NH2301 NIUHANG | Alldatasheet

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Date:2014/10/20 http://www.nhel .com.cn P-CHANNEL ENHANCEMENT-MODE MOSFETS Rev.:A SOT-23 VOLTAGE CURRENT Unit:(mm) Production Data Sheet Niu Hang Electronic Co. Ltd MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED) Ϯ

FEATURES

Absolute Maximum Ratings T A =25° C unless otherwise noted Ϯ Top View Bottom View D G S D G S The NH2301 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. NH2301 -20Volts -2.8Ampers NH2301=A1 C h a r a c t e r i s t i c S y m bol M a x U ni t D r a i n S ou r c e V o l t a g e B V D S S V G a t e S ou r c e V o l t a g e V G S V D r a i n C u r r e nt c on t i nuous I D 2.8 A D r a i n C u r r e nt pu l s e I D M A T o t a l D e vi c e D i s s i pa t i on T A P D 900 m W J unc t i o n T J 150 S t or a ge T e m pe r a t ur e T s t g 55t Page: 1 of 8

Electronic Co. Ltd Page: 2 of 8 E L E C T R I C A L E L E C T R I C A L E L E C T R I C A L E L E C T R I C A L C H A R A C T E R I S T I C S C H A R A C T E R I S T I C S C H A R A C T E R I S T I C S C H A R A C T E R I S T I C S P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 C h a r a c t e r i s t i c S y m b ol M i n T yp M a x U ni t D r a i n S ou r c e B r e a kdow n V o l t a g e I D u A V G S V B V D S S V G a t e T hr e s hol d V o l t a g e I D u A V G S V D S V G S t h 0.5 1.5 V D i o de F or w a r d V o l t a g e D r op I S 0.75 A V G S V V S D V Z e r o G a t e V o l t a g e D r a i n C u r r e nt V G S V V D S 16V V G S V V D S 16V T A I D S S u A G a t e B ody L e a ka ge V G S V V D S V I G S S 100 n A S t a t i c D r a i S our c e O n S t a t e R e s i s t a nc e I D 2.8 A V G S R D S O N 100 m Ω S t a t i c D r a i S our c e O n S t a t e R e s i s t a nc e I D A V G S 2.5 V R D S O N 120 m Ω I nput C a pa c i t a nc e V G S V V D S V f M H z C I S S 600 pF O u t put C a pa c i t a nc e V G S V V D S V f M H z C O S S 120 pF T ur O N T i m e V D S V I D 2.8 A R G E N Ω t on) ns T ur O F F T i m e V D S V I D 2.8 A R G E N Ω t of f ns P u l s e W i dt h 300 μ s D ut y C y c l e 2.0% Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Electronic Co. Ltd Page: 3 of 8 RATINGANDCHARACTERISTICCURVES (TA=25°C(UNLESS OTHERWISE NOTED) P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 -1E-3 -0.01 -0.1 -10 -0.3 -3E-3 -0.03 T a =25 Pulsed I S —— V SD SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) -10 -0 -1 -2 -3 -4 -10 Transfer Characteristics DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed T a =25 Pulsed Output Characteristics V GS V GS =-2.0V V GS =-1.5V V GS =-1.0V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) 120 150 V GS =-4.5V V GS =-2.5V R DS(ON) —— I D ON-RESISTANCE R DS(ON) Ω DRAIN CURRENT I D (A) T a =25 Pulsed -0 -2 -4 -6 -8 100 150 200 250 R DS(ON) —— V GS I D =-2.8A ON-RESISTANCE R DS(ON) Ω GATE TO SOURCE VOLTAGE V GS (V) T a =25 Pulsed Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Electronic Co. Ltd Page: 4 of 8 Gate Charge Test Circuit & WaveformGate Charge Test Circuit & Waveform VDC Ig Vds DUT VDC Vgs Vgs 10V Qg Qgs Qgd Charge DUT Vgs Diode Recovery Test Circuit & W aveform s Vds + rr Q = - Idt t V DC DU T Vdd Vgs V ds Vgs RL Rg V gs V ds 10% 90% R esistive Switching Test Circuit & W aveform s t t r d(on) t on t d(off) t f t off VDC Ig Vds DUT VDC Vgs Vgs 10V Qg Qgs Qgd Charge Ig Vgs VD C DUT L Vgs Vds IsdIsd Diode Recovery Test Circuit & W aveform s Vds - Vds + I F dI/dt I R M rr VddVdd Q = - Idt t rr V DC DU T Vdd Vgs V ds Vgs RL Rg V gs V ds 10% 90% R esistive Switching Test Circuit & W aveform s t t r d(on) t on t d(off) t f t off P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Unit ： mm Page: 5 of 8 Production Data Sheet Niu Hang Electronic Co. Ltd Thermal Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified ) 1.PCB Mounted with The Suggested PAD Size Symbol t ≤ 10s Steady-State Steady-State R θJL Maximum Junction-to-Lead ° C/W ° C/WMaximum Junction-to-Ambient A D 125 Parameter Typ Max Units ° C/WR θJA 100 90Maximum Junction-to-Ambient A Thermal Characteristics P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Page: 6 of 8 Production Data Sheet Niu Hang Electronic Co. Ltd ORDER INFORMATION

• Packing information P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(T S min) −Temperature Max(T S max) −Time(ts min to ts max 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (T L − Time (t L 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(T P Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Production Data Sheet Niu Hang Electronic Co. Ltd Page: 7 of 8 P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 Date:2014/10/20 http://www.nhel .com.cn Rev.:A

Electronic Co. Ltd Page:8 of 8 Disclaimer Reproducing and modifying informatiom of the document is prohibited without permission from niuhang Electronics co., LTD Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein the document anytime without notification. use of any product including damages incidentally and consequentially occurred. Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or Niuhang Electronics co., LTD. does not assume any and all implied warranties, including warranties of fitness for particular purpose,non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Niuhang Electronics co., LTD.makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining,such as medical instruments.transportation equipment,aerospae machinery et cetera.Customers usin or selling these products for use in such applications do so at their own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting resulting from such improper use or sale. When the appearance of the product and chip size does not change, in order to product the customer. quality, change the internal structure and the production process Niuhang can not notify P-CHANNEL ENHANCEMENT-MODE MOSFETS NH2301 Date:2014/10/20 http://www.nhel .com.cn Rev.:A