NA1150 NISSHINBO | Alldatasheet
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Audio Switching Driver with Load Diagnostics - 1 - Ver.1.0 FEATURES GENERAL DESCRIPTION ⚫ Monaural BTL Output ⚫ PWM input Single-ended/Differential ⚫ Supply Voltage: V+=2.6 V to 5.5 V ⚫ Operating Temperature Range: −40°C to 125°C ⚫ Quiescent Current: 2.0mAtyp. (No input signal) ⚫ Output Power PO = 1.5W typ. (@V+ = 5V, RL = 8Ω, THD+N = 10%) ⚫ Load Diagnostics Function ⚫ Over Temperature Detecting Function ⚫ Over Current Detecting Function ⚫ UVLO ⚫ CMOS Process ⚫ Package Outline DFN2323-8-GS / VSP-8-AF The NA1150 is a CMOS process PWM input - mono BTL output audio Switching driver, ideal for use in microcontroller-based sound systems such as security equipment, digital signage equipment and household appliances. The device provides up to 1.5W into 8 Ω at less than10% THD+N from a 5Vdc supply. The integrated load diagnostic function notifies the MCU of any speaker connection anomalies through an open-drain output port. Fewer external components with a smaller package provide reliable, space-saving solution for voice speech and sound reproduction designs. ⚫ Security equipment ⚫ Household appliance ⚫ Digital signage equipment ⚫ Vending machine ⚫ microcontroller based sound systems. Application Circuits OUTP LOAD Diagnostics Over Current Detecting UVLO OUTN INP INN FLTB STBYB Differntial PWM Signal RFLT VPULLUP GNDLogic
APPLICATIONS
NA1150 supports only BTL (differential) output format. The input signal can be set to support both single-ended and differential input formats. DFN2323-8-GS 2.3 x 2.3 x 0.397(mm) Pitch: 0.5mm VSP-8-AF Pitch: 0.65mm Under Development
- 2 - Ver.1.0 ■ PRODUCT NAME INFORMATION NA1150 aa c dd e Description of configuration Composition Item Description aa Package code Indicates the package. GS: DFN2323-8-GS, AF: VSP-8-AF c Version Fixed with A dd Packing Taping direction. Refer to the packing specifications. e Grade Indicates the quality grade. Grade e Applications Operating Temperature Range Test Temperature S General-purpose and Consumer application −40°C to 125°C 25°C ■ ORDER INFORMATION PRODUCT NAME PACKAGE RoHS HALOGEN- FREE PLATING COMPOSITION WEIGHT (mg) Quantity (pcs) NA1150GSAE4S DFN2323-8-GS ✓ ✓ Sn2Bi 7 3,000 NA1150AFAE2S VSP-8-AF ✓ ✓ Sn2Bi 21 2,000 The AF package of this product is only available in E2 format, and the GS package is only available in E4 format. The VSP-8-AF package version is under development.
- 3 - Ver.1.0 ■ PIN DESCRIPTIONS DFN2323-8-GS Surface side Bottom side NA1150 Pin Configuration (1) Connect exposed pad to the GND. Exposed pad is electronically connected to the backside of the die, but cannot be function as GND. Pin No. Pin Name I/O Description 1 STBYB I Standby pin (Active low). 2 FLTB O Fault notification pin (Open drain active low). 3 INP I Positive input pin. Please refer to the Input signal waveform section for recommended input requirements. 4 INN I Negative input pin. Please refer to the Input signal waveform section for recommended input requirements. 5 OUTN O Negative output pin. For details on the output signal, please refer to the output signal waveform section. 6 V+ Power Power Supply Input Pin. 7 GND - Ground Pin. 8 OUTP O Positive output pin. For details on the output signal, please refer to the output signal waveform section. Please refer to “TYPICAL APPLICATION CIRCUIT” or “OPERATING MODE” or “INPUT/OUTPUT SIGNALS” for details. (1)
- 4 - Ver.1.0 ■ PIN DESCRIPTIONS VSP-8-AF NA1150 Pin Configuration Pin No. Pin Name I/O Description 1 STBYB I Standby pin (Active low). 2 FLTB O Fault notification pin (Open drain active low). 3 INP I Positive input pin. Please refer to the Input signal waveform section for recommended input requirements. 4 INN I Negative input pin. Please refer to the Input signal waveform section for recommended input requirements. 5 OUTN O Negative output pin. For details on the output signal, please refer to the output signal waveform section. 6 V+ Power Power Supply Input Pin. 7 GND - Ground Pin. 8 OUTP O Positive output pin. For details on the output signal, please refer to the output signal waveform section. Please refer to “TYPICAL APPLICATION CIRCUIT” or “OPERATING MODE” or “INPUT/OUTPUT SIGNALS” for details. The VSP-8-AF package version is under development.
- 5 - Ver.1.0 ■ ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Supply Voltage V+ 7 V Input Voltage VIN -0.3 to 5.5 or V+(1) V Load Resistance(Ta=25°C) RL ≥ 3.2 Ω Storage Temperature Range Tstg -40 to 150 °C Junction Temperature Range(2) Tj 150 °C (1) For supply voltage less than 5.5V, the absolute maximum input voltage is equal to supply voltage. This specification applies to INP, INN, STBYB, FLTB pins. (2)Calculate the power consumption of the IC from the operating conditions and calculate the junction temperature with the thermal resistance. Please refer to "Thermal characteristics" for the thermal resistance under our measurement board conditions. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. ■ THERMAL CHARACTERISTICS Package Parameter Measurement Result Unit DFN2323-8-GS Thermal Resistance (ja) 2-Layer(1)/ 4-Layer(2) 223 / 78 °C/W Thermal Characterization Parameter (ψjt) 2-Layer(1)/ 4-Layer(2) VSP-8-AF (Under Development) Thermal Resistance (ja) 2-Layer(3)/ 4-Layer(4) 228 / 170 °C/W Thermal Characterization Parameter (ψjt) 2-Layer(3)/ 4-Layer(4) ja:Junction-to-Ambient Thermal Resistance ψjt:Junction-to-Top Thermal Characterization Parameter (1) 2-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4) with exposed pad. (2) 4-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4) with exposed pad. (For 4-layer: Applying 99.5 mm × 99.5 mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5.) (3)Mounted on glass epoxy board (76.2mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4). (4)Mounted on glass epoxy board (76.2mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4).
- 6 - Ver.1.0 ■ ELECTROSTATIC DISCHARGE RATINGS Conditions Protection Voltage HBM C = 100 pF, R = 1.5 kΩ ±2000 V CDM ±1000 V ELECTROSTATIC DISCHARGE RATINGS The electrostatic discharge test is done based on JEDEC JS-001, JS-002. In the HBM method, ESD is applied using the power supply pin and GND pin as reference pins. ■ RECOMMENDED OPERATING CONDITIONS Symbol Ratings Unit Supply Voltage V+ 2.6 to 5.5 V Operating Temperature Range Ta −40 to 125 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
- 7 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS V+ = 5.0V, VPULLUP=5.0V, Ta=25°C unless otherwise specified. Parameter Symbol Conditions MIN TYP MAX Unit DC CHARACTERISTICS Standby Current IST - - 1 μA Quiescent Current IQ INP=INN=0V, RL=Open - 2 2.5 mA On Resistance RON VDS=10mV - 0.5 - Ω High Level Input Voltage (1) VIH High Level 2.0 - V+ V Low Level Input Voltage (1) VIL Low Level -0.3 - 0.8 V FLTB High Level Output Voltage VOHFLT RFLT=47 kΩ VPULLUP -0.2 - - V FLTB Low Level Output Voltage VOLFLT RFLT=47 kΩ - - 0.5 V Pull Down Resistance RDWN STBYB pin - 300 - kΩ Input Pull Down Resistance RIN INP, INN pin - 1000 - kΩ TRANSIENT CHARACTERISTICS (RL = 8Ω, fPWM = 100kHz unless otherwise specified.) Turn On Time 0 TON0 Normal mode 2.5 5 10 ms Turn On Time 1 TON1 Load diagnostics mode - 225 - ms AC CHARACTERISTICS (f=1kHz, RL = 8Ω+33μH, fPWM = 100kHz, BW=20Hz to 20kHz, unless otherwise specified.) Output Power Po THD+N = 10% - 1.5 - W Efficiency η THD+N = 10% - 85 - % (1)STBYB pin, INP pin and INN pin All electrical characteristic parameters that specify the minimum and maximum specifications are tested.
- 8 - Ver.1.0 ■ ELECTRICAL CHARACTERISTICS (continued) V+ = 5.0V, VPULLUP=5.0V, Ta=25°C unless otherwise specified. Parameter Symbol Conditions MIN TYP MAX Unit Detection circuit characteristics (RL = Open unless otherwise specified.) UVLO Detect Voltage VUVLO 1.85 - 2.55 V UVLO Release Voltage VUVLOR 1.90 - 2.59 V Over Temperature detect level TOT - 180 - °C Over Temperature Release level TOTR - 155 - °C Over Current Detect Current IOC - 2.2 - A Open Load Detection Threshold RLO Including speaker wires 100 - 300 Ω Short Load Detection Threshold RLSH Including speaker wires - - 2.5 Ω Short to V+ Detection Threshold RSH Including speaker wires 200 - 800 Ω Short to GND Detection Threshold RSL Including speaker wires 200 - 800 Ω All electrical characteristic parameters that specify the minimum and maximum specifications are tested.
- 9 - Ver.1.0 ■TYPICAL APPLICATION CIRCUIT NA1150 Typical Application Circuit The voltage value of VPULLUP be equal to V+ or Set according to the absolute maximum rating of the input voltage. Notes on External Components Table 1 Component list SYMBOL VALUE NOTE C1 0.1µF The power supply decoupling capacitor. This capacitor is intended to lower and stabilize the impedance of the power supply line in the high frequency band caused by class D switching. The recommended characteristics for this capacitor are a ceramic capacitor with temperature characteristics of X7R, DC bias characteristics of less than -1% (at 5V), and a self-resonant frequency of 2MHz or more. C2 10µF The power supply decoupling capacitor. This capacitor is primarily intended to lower and stabilize the impedance of the power supply line in the low frequency band of the audio signal. Use a capacitor with temperature characteristics of X7R, DC bias characteristics of less than -1% (at 5V), and ESR of 100mΩ or less. RFLT 47kΩ The pull-up resistor for the open-drain output pin. The recommended value is 47kΩ, with a maximum upper limit of 750kΩ. Select a resistance value that allows for margin for variations and temperature characteristics and perform an evaluation on the actual device before use. OUTP LOAD Diagnostics Over Current Detecting UVLO OUTN INP INN FLTB STBYB Differntial PWM Signal RFLT VPULLUP GNDLogic C1 C2
- 11 - Ver.1.0 OPERATING MODE The NA1150 has the following four operating modes. Standby mode Asserting the active-low STBYB pin completely shuts down the device into a low power standby mode. Active mode Negating the active LOW STBYB pin, the NA1150 is in active mode and outputs a signal voltage according to the input signal. Depending on the voltage state of the input pin, it is possible to shift to load diagnosis mode before entering active mode. For details, please refer to “STARTUP SEQUENCE AND INPUT MODE” section. Load Diagnostics sequence The NA1150 can be operated in the load diagnostic sequence mode immediately after transitioning from standby mode to active mode. If no failure is detected in the load diagnosis result, it shifts to active mode. For details, please refer to “STARTUP SEQUENCE AND INPUT MODE” section. Fault modes Detecting Short, Short to V+ or GND and OPEN in Load Diagnostics sequence In case NA1150 detects a shorted load in the load diagnosis mode, it sets the FLTB pin to low level and repeats load diagnosis sequence until the cause of the fault is removed. If OPEN of the output pin is detected, the FLTB is set to low level, and it shifts to the active mode. In case the Output pin is short to V+, or a short to the GND, the NA1150 stops operating; to operate the NA1150, remove the cause of the short and set the STBY pin to a "L" level once and then to a "H" level. Over Temperature Detect The NA1150 shuts down the output when the die junction temperature reaches the over temperature detecting threshold. Then the device asserts the FALT pin. Recovery is automatic when the temperature returns to Over Temperature release level. UVLO The power supply voltage falls below the UVLO Detect Voltage, the IC goes into Fault mode and sets the FLTB pin to L level. Then the power supply voltage exceeds the UVLO release voltage, the IC transitions to Active Mode via Load diagnostic Mode and sets the FLTB terminal to H level. For details, see the "Detecting Functions" section. Over Current Detect In Active Mode, when the output current exceeds the Over Current Detect Current, the IC enters the Fault mode, stops output, and sets the FLTB pin to L level. After about 5msec, the NA1150 will start working again. Fault mode with FLTB pin. During the fault mode, the FLTB pin (open drain active low) is asserted and outputs an L level voltage. If the cause of the Fault is UV or Over Temp, the FLTB pin becomes high impedance and outputs a high level, and the NA1150 becomes Active mode if the cause is removed. Otherwise, the FLTB pin is latched low. Once the cause of the Fault has been removed, the NA1150 can be set to Standby mode to release the latched state. Table 2: Faults and Actions with operating mode. Operating Mode STBYB FLTB INP INN OUTP OUTN Clearing to Active Condition Clearing FLTB=L to H Standby L H * * Hi-Z Hi-Z STBYB=H - Active H H L/H L/H L/H L/H - - Load diagnostic sequence H H or L * * DC Bias DC Bias - - Fault modes Speaker-Short H L * * Hi-Z Hi-Z Self-Clearing by removing the cause of the fault STBYB=L Output Short to V+ or GND H L * * Hi-Z Hi-Z Removing the cause of the fault and STBYB=L to H STBYB=L Speaker-Open H L L/H L/H L/H L/H - STBYB=L Over Current H L * * Hi-Z Hi-Z Self-Clearing by removing the cause of the fault STBYB=L UVLO H L * * Hi-Z Hi-Z Self-Clearing Over Temp H L * * Hi-Z Hi-Z Self-Clearing *:Don’t Care
- 13 - Ver.1.0 ・Single-ended PWM mode In this mode, the device turns on with Load diagnostics. And inputs single-ended PWM signal. The speaker is driven by an inverted output PWM signal with OUTP = INP and OUTN = -INP. Single-ended PWM mode is not recommended for new consideration because it is inferior to differential PWM (see “Input/Output signals” section). Figure 4 Single-ended PWM mode Active 40ms 180ms5ms Hi-Z Hi-Z Hi-Z Hi-Z Short to V+ or GND Check Open or Shorted load CheckInput Check STBYB INP INN OUTP OUTN FLTB
- 14 - Ver.1.0 ■ REVISION HISTORY Date Revision Contents of Changes October 1, 2024 Ver. 1.0 Initial release
Package Information
DFN2323-8-GS PI-DFN2323-8-GS-E-A ■ PACKAGE DIMENSIONS UNIT: mm 0.075 S 0.397±0.03 0.01 +0.010 -0.008 S 0.05 S 2.3±0.05 2.3±0.05 0.26 +0.06 -0.04 φ0.05 M S AB 0.21 +0.06 -0.04 1.38 +0.06 -0.04 0.25 1.86 +0.06 -0.04 A B 3-R0.5 0.5 C0.5 ■ EXAMPLE OF SOLDER PADS DIMENSIONS UNIT: mm 1.84 0.32 1.22 2.5 0.28 R0.07 R0.37 0.5
DFN2323-8-GS PI-DFN2323-8-GS-E-A ■ PACKING SPEC UNIT: mm (1) Taping dimensions / Insert direction Insert direction (E4) 2.55±0.05 2.55±0.05 1.75±0.13.5±0.05 8.0±0.2 4.0±0.1 0.5±0.1 0.25±0.05 0.65±0.05 1.0±0.07 (2) Taping state Feed direction more than 160mm 3000pcs/reel Sealing with covering tape DevicesTrailer part Leader part more than 550mm
DFN2323-8-GS PI-DFN2323-8-GS-E-A (3) Reel dimensions 2±0.5 13±0.221±0.8 60 +1 180 -3 11.4±1.0 +1.0 -0.3 (4) Peeling strength Peeling strength of cover tape ・Peeling angle 165 to 180°degrees to the taped surface. ・Peeling speed 300mm/min ・Peeling strength 0.1 to 1.0N 1 6 5t o1 8 0 ° Direction to pull Feed direction Carrier tape Cover tape
DFN2323-8-GS PI-DFN2323-8-GS-E-A (5) Packing state Box size:185×185×18 <Label> Product name, Quantity, Lot No, Mark ■ HEAT-RESISTANCE PROFILES Reflow profile 3℃/s MAX. 217℃ 200℃ 150℃ 255℃ 260℃ MAX. 30s MAX. 6℃/s MAX. 60-120s 60-150s Time(s) Package Surface Temperature(℃)
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