N16T1630C2B NANOAMP | Alldatasheet

Document overview

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Technical content

Features

  • Single Wide Power Supply Range 2.7 to 3.6 Volts
  • Very low standby current 100µA at 3.0V (Max)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE ) for memory expansion
  • Very fast access time 55ns address access option 35ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Green option for BGA package Pin Configuration (Top View) Pin Description Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Max @ 3.0V Operating Current (Icc), Max N16T1630C2BZ 48 - BGA -40oC to +85oC 2.7V - 3.6V 70ns 55ns 100 µA3 m A @ 1 M H z N16T1630C2BZ2 Green 48 - BGA 123456 A LB OE A0 A 1 A2 CE2 B I/O8 UB A3 A 4 CE1 I/O0 C I/O9 I/O 10 A 5 A 6 I/O 1 I/O 2 D VSS I/O11 A 17 A7 I/O3 VCC E VCC I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 A19 A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC

48 Ball BGA

CE1, CE2 Chip Enable Input OE Output Enable Input LB Lower Byte Enable Input UB Upper Byte Enable Input I/O0-I/O15 Data Inputs/Outputs VCC Power VSS Ground NC Not Connected

(DOC#14-02-007 REV F ECN# 01-1103) 2 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Functional Block Diagram Functional Description CE1 CE2 WE OE UB LB I/O0 - I/O15 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. MODE POWER HXXXXX H i g h Z Standby2 2. When the device is in standby mode, control inputs (WE , OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. Standby XLXXXX H i g h Z Standby2 Standby L H X X H H High Z Standby Standby LHL X3 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. L1 L1 Data In Write Active LHHL L1 L1 Data Out Read Active LHHH L1 L1 High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 8p F I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 8p F Address Inputs A0 - A19 x 16 bit RAM Array Input/ Output Mux and Buffers Address Decode Logic Control Logic CE1 CE2 WE OE UB LB I/O0 - I/O7 I/O8 - I/O15

(DOC#14-02-007 REV F ECN# 01-1103) 3 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Absolute Maximum Ratings1 1. Stresses greater than those listed above may cause permanent dam age to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC Operating Characteristics (Over Specified Temperature Range) Item Symbol Test Conditions Min. Typ1 1. Typical values are measured at Vcc=Vcc Typ., T A=25°C and not 100% tested. Max Unit Supply Voltage VCC 2.7 3.0 3.6 V Input High Voltage VIH 2.2 VCC+0.3 V Input Low Voltage VIL –0.3 0.6 V Output High Voltage VOH IOH = -0.2mA V CC–0.2 V Output Low Voltage VOL IOL = 0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 2. This parameter is specified with the out puts disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 5.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 25.0 mA Maximum Standby Current ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.0 V 100.0 µA

(DOC#14-02-007 REV F ECN# 01-1103) 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Timing Test Conditions Output Load Circuit Item Input Pulse Level 0.1V CC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 V CC Operating Temperature -40 oC to +85 oC VCC 30 pF I/O 14.5K 14.5K Output Load

(DOC#14-02-007 REV F ECN# 01-1103) 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Timing Item Symbol -55 -70 Units Min. Max. Min. Max. Read Cycle Time tRC 55 70 ns Address Access Time tAA 55 70 ns Chip Enable to Valid Output tCO 55 70 ns Output Enable to Valid Output tOE 30 35 ns Byte Select to Valid Output tLB, tUB 55 70 ns Chip Enable to Low-Z output tLZ 55 n s Output Enable to Low-Z Output tOLZ 55 n s Byte Select to Low-Z Output tBLZ 55 n s Chip Disable to High-Z Output tHZ 02 502 5 n s Output Disable to High-Z Output tOHZ 02 502 5 n s Byte Select Disable to High-Z Output tBHZ 02 502 5 n s Output Hold from Address Change tOH 10 10 ns Write Cycle Time tWC 55 70 ns Chip Enable to End of Write tCW 50 55 ns Address Valid to End of Write tAW 50 55 ns Byte Select to End of Write tBW 50 55 ns Write Pulse Width tWP 50 55 ns Address Setup Time tAS 00 n s Write Recovery Time tWR 00 n s Write to High-Z Output tWHZ 25 25 ns Data to Write Time Overlap tDW 25 25 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 55 n s

(DOC#14-02-007 REV F ECN# 01-1103) 6 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Timing Waveform of Read Cycle (WE=VIH) Address Data Out tRC tAA tOH Data ValidPrevious Data Valid Address LB, UB OE Data Valid tRC tAA tCO tHZ tOHZ tBHZ tOLZ tOE tLZ High-Z Data Out tLB, tUB tLBLZ, tUBLZ CE1 CE2

(DOC#14-02-007 REV F ECN# 01-1103) 7 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE1 Control) Address Data In CE1 CE2 LB, UB Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE Data Out High-Z tOW tAS tWP tDW tBW Address WE Data Valid tWC tAW tCW tWR tDH LB, UB Data In High-Z tAS tWP tLZ tDW tBW Data Out tWHZ CE1 (for CE2 Control, use inverted signal)

(DOC#14-02-007 REV F ECN# 01-1103) 8 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B Ball Grid Array Package Dimensions (mm) DE e = 0.75 BALL MATRIX TYPESD SE J K SIDE VIEWTOP VIEW BOTTOM VIEW E D A1 BALL PAD CORNER (3) 0.90±0.10 0.23±0.05 0.15 0.05 Z Z 1. 0.30±0.05 DIA. 1. DIMENSION IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER. PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. 2. SEATING PLANE - Z SD SE e K TYP J TYP e A1 BALL PAD CORNER

(DOC#14-02-007 REV F ECN# 01-1103) 9 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N16T1630C2B

Ordering Information

© 2004, 2005 NanoAmp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision Date Change Description A January 2003 Initial Preliminary Release B August 2003 Corrected typo for Ioh and Iol Increased Isb to 100uA at 3V C September 2003 Add test conditions D March 2004 Remove TSOP Package E August 2004 Changed ball(E3) from Vss to NC F January 2005 Added Green package offering N16T1630C2BX(x)-XXI Performance 55 = 55ns 70 = 70ns Package Z = BGA Z2 = Green BGA