N04Q16YYC2B NANOAMP | Alldatasheet

Document overview

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Technical content

Features

  • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V 2.3V - 2.7V 2.7V - 3.6V
  • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ
  • Very low standby current 50nA typical for 1.2V operation
  • Very low operating current 400µA typical for 1.2V operation at 1µs
  • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE ) for memory expansion
  • Automatic power down to standby mode
  • BGA, TSOP and KGD options
  • RoHS Compliant Product Options Part Number I/O Typical Standby Current Vcc (V) VccQ (V) Speed (nS) Typical Operating Current Operating Temperature N04Q1612C2Bx-15C x16 50nA 1.2 1.2, 1.8, 3 150ns 0.4 mA @ 1MHz 0oC to +70oC N04Q1618C2Bx-15C x16 50nA 1.8 1.8, 2.5, 3 150ns 0.4 mA @ 1MHz N04Q1618C2Bx-70C x16 200nA 70ns 0.6 mA @ 1MHz N04Q1625C2Bx-15C x16 800nA 2.5 2.5, 3 150ns 0.6 mA @ 1MHz N04Q1630C2Bx-70C x16 800nA 3.0 3.0 70ns 2.2mA @ 1MHz

Stock No. 23451-B 2/06 2 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Pin Configurations (4Mb) Pin Descriptions Pin Name Pin Function A0-A17 Address Inputs WE Write Enable Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input OE Output Enable Input LB Lower Byte Enable Input UB Upper Byte Enable Input I/O0-I/O7 Lower Byte Data Input/Output I/O8-I/O15 Upper Byte Data Input/Output VCC Core Power VCCQ Power for I/O VSS Core Ground VSSQ Ground for I/O NC Not Connected PIN ONE A CE1 I/O0 I/O1 I/O2 I/O3 VCCQ VSSQ I/O I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 A OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O I/O10 I/O9 I/O8 CE2 A A10 A11 A17 TSOP II 123456 A LB OE A0 A 1 A2 CE2 B I/O8 UB A3 A 4 CE1 I/O0 C I/O9 I/O 10 A 5 A 6 I/O 1 I/O 2 D VSSQ I/O11 A 17 A7 I/O3 VCC E VCCQ I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC

48 Pin BGA (top)

Stock No. 23451-B 2/06 3 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Functional Block Diagram Functional Description CE1 CE2 WE OE UB1 LB1 I/O0 - I/O15 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. MODE POWER HXXXXX H i g h Z Standby2 2. When the device is in standby mode, control inputs (WE , OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. Standby XLXXXX H i g h Z Standby2 Standby L H X X H H High Z Standby Standby LHL X3 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. L1 L1 Data In Write3 Active LHHL L1 L1 Data Out Read Active LHHH L1 L1 High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 8p F I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 8p F Address Inputs (A1 - A4) Address Inputs (A0, A5 - A17) Word Address Decode Logic 4Mb RAM Array Word Mux Input/ Output Mux and Buffers Page Address Decode Logic Control Logic CE1 CE2 WE OE UB LB I/O0 - I/O7 I/O8 - I/O15

Stock No. 23451-B 2/06 4 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Absolute Maximum Ratings1 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC Operating Characteristics (Over Specified Temperature Range) Item Symbol Device Conditions Min. Typ Max Unit Core Supply Voltage VCC I/O Supply Voltage V CCQ Input High Voltage VIH 0.8 x VCCQ VCC+0.3 V Input Low Voltage VIL –0.3 0.2 x VCCQ Output High Voltage VOH IOH = -100uA V CC–0.2 V Output Low Voltage VOL IOL = 100uA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA

Stock No. 23451-B 2/06 5 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Power Consumption (TA = 0oC - 70oC) Device PN Speed Typ1 Max N04Q1612C2Bx- 15C Standby Current2 Isb Chip Disabled VCC = 1.3V, VIN = VCC or 0 50 500 nA Read/Write Current3 Icc Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL 1us 0.4 0.5 mA150ns 2 3 Page Mode Current Iccp Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL 1us 80 100 µA150ns 300 450 N04Q1618C2Bx- 15C Standby Current Isb Chip Disabled VCC = 1.9V, VIN = VCC or 0V 50 500 nA Read/Write Current Icc Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL 1us 0.4 0.5 mA150ns 2 3 Page Mode Current Iccp Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL 1us 80 100 µA150ns 400 500 N04Q1618C2Bx- 70C Standby Current Isb Chip Disabled VCC = 1.9V, VIN = VCC or 0 0.2 1.5 µA Read/Write Current Icc Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL 1us 0.6 0.9 mA70ns 6 7 Page Mode Current Iccp Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL 1us 0.1 0.2 mA70ns 0.8 1 N04Q1625C2Bx- 15C Standby Current Isb Chip Disabled VCC = 2.8V, VIN = VCC or 0 0.8 1.0 µA Read/Write Current Icc Chip Enabled, IOUT = 0 VCC= 2.8V, VIN=VIH or VIL 1us 0.6 1.0 mA150ns 3 4 Page Mode Current Iccp Chip Enabled, IOUT = 0 VCC= 2.8V, VIN=VIH or VIL 1us 0.1 0.2 mA150ns 1.5 2 N04Q1630C2Bx- 70C Standby Current Isb Chip Disabled VCC = 3.6V, VIN = VCC or 0 0.8 4 µA Read/Write Current Icc Chip Enabled, IOUT = 0 VCC= 3.6V, VIN=VIH or VIL 1us 2.2 3 mA70ns 8.5 10 Page Mode Current Iccp Chip Enabled, IOUT = 0 VCC= 3.6V, VIN=VIH or VIL 1us 0.5 0.6 mA70ns 2 1.5 1. Typical values are measured at Vcc=Vcc Typ., T A=25°C and not 100% tested. 2. This device assumes a standby m ode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values. 3. This parameter is specified with the out puts disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. This applies to all Icc and Iccp values.

Stock No. 23451-B 2/06 6 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Power Savings with Page Mode Operation (WE = VIH) Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A1 - A4 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Page Address (A0, A5-A17) LB, UB OE CE1 CE2 Word Address (A1-A4) Open page Word 1 Word 2 Word 16...

Stock No. 23451-B 2/06 7 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature 0 to +70oC Timing Item Symbol -70 -150 Units Min. Max. Min. Max. Read Cycle Time tRC 70 150 ns Address Access Time tAA 70 150 ns Page Mode Address Access Time tAAP 35 75 ns Chip Enable to Valid Output tCO 70 150 ns Output Enable to Valid Output tOE 35 75 ns Byte Select to Valid Output tLB, tUB 70 150 ns Chip Enable to Low-Z output tLZ 10 10 ns Output Enable to Low-Z Output tOLZ 55 n s Byte Select to Low-Z Output tLBZ, tUBZ 10 10 ns Chip Disable to High-Z Output tHZ 02 002 0 n s Output Disable to High-Z Output tOHZ 02 002 0 n s Byte Select Disable to High-Z Output tLBHZ, tUBHZ 02 002 0 ns Output Hold from Address Change tOH 10 10 ns Write Cycle Time tWC 70 150 ns Chip Enable to End of Write tCW 50 120 ns Address Valid to End of Write tAW 50 120 ns Byte Select to End of Write tLBW, tUBW 50 120 ns Write Pulse Width tWP 40 100 ns Address Setup Time tAS 00 n s Write Recovery Time tWR 00 n s Write to High-Z Output tWHZ 20 20 ns Data to Write Time Overlap tDW 40 100 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 55 n s

Stock No. 23451-B 2/06 8 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Timing Waveform of Read Cycle (WE=VIH) Address Data Out tRC tAA tOH Data ValidPrevious Data Valid Address LB, UB OE Data Valid tRC tAA tCO tHZ tOHZ tLBHZ, tUBHZ tOLZ tOE tLZ High-Z Data Out tLB, tUB tLBLZ, tUBLZ CE1 CE2

Stock No. 23451-B 2/06 9 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Timing Waveform of Page Mode Read Cycle (WE = VIH) Page Address LB, UB OE tAA tCO tHZ tOHZ tLBHZ, tUBHZ tOLZ tOE High-Z Data Out tLB, tUB tLBLZ, tUBLZ CE1 CE2 Word Address tAAP tRC

Stock No. 23451-B 2/06 10 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE1 Control) Address Data In CE1 CE2 LB, UB Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE Data Out High-Z tOW tAS tWP tDW tLBW, tUBW Address WE Data Valid tWC tAW tCW tWR tDH LB, UB Data In High-Z tAS tWP tLZ tDW tLBW, tUBW Data Out tWHZ CE1 (for CE2 Control, use inverted signal)

Stock No. 23451-B 2/06 11 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information 44-Lead TSOP II Package (T44) Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash 18.41±0.13 10.16±0.13 SEE DETAIL B 1.10±0.15 11.76±0.20 0.45 0.30 0.80mm REF DETAIL B 0.80mm REF 0o-8o 0.20 0.00

Stock No. 23451-B 2/06 12 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information Ball Grid Array Package Dimensions (mm) DE e = 0.75 BALL MATRIX TYPESD SE J K SIDE VIEWTOP VIEW BOTTOM VIEW E D A1 BALL PAD CORNER (3) 1.24±0.10 0.28±0.05 0.15 0.05 Z Z 1. 0.35±0.05 DIA. 1. DIMENSION IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER. PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. 2. SEATING PLANE - Z SD SE e K TYP J TYP e A1 BALL PAD CORNER

Stock No. 23451-B 2/06 13 The specification is ADVANCE INFORMATION and subject to change without notice. NanoAmp Solutions, Inc. N04Q16yyC2B Advance Information

Ordering Information

© 2005-2006 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision Date Change Description A October 2005 Initial Advanced Release B February 2006 Raised maximum Vcc to 3.6V for 3V device Added green packages Changed dual rail to ‘Q’ part designator N04Q16 XX C2B X - XX X 70 = 70ns 15 = 150ns T = 44-pin TSOP II T2 = 44-pin TSOP II Green (RoHS Compliant) B = 48-ball BGA B2 = 48-ball BGA Green (RoHS Compliant) W = Wafer (KGD) Temperature Package Type Performance C = 0oC - 70oC I = -40oC - 85oC Operating Voltage 12 = 1.2V 18 = 1.8V 25 = 2.5V 30 = 3.0V Q = Low Power SRAM with VccQ for dual rail operation