N08M163WL1A NANOAMP | Alldatasheet

Document overview

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Technical content

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
  • Very low standby current 4.0µA at 3.0V (Typical)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE ) for memory expansion
  • Low voltage data retention Vcc = 1.8V
  • Special processing for Soft Error Rate (SER) reduction
  • Automatic power down to standby mode
  • Compact space saving BGA package avail- able Pin Configurations Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Max Operating Current (Icc), Max N08M163WL1AB 48 - BGA -40oC to +85oC 2.3V - 3.6V 70ns @ 2.7V 100ns @ 2.3V 20 µA3 m A @ 1 M H z N08M163WL1AD Known Good Die 123456 A LB OE A0 A 1 A2 CE2 B I/O8 UB A3 A 4 CE1 I/O0 C I/O9 I/O 10 A 5 A 6 I/O 1 I/O 2 D VSS I/O11 A 17 A7 I/O3 VCC E VCC I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC

48 Pin BGA (top)

CE1, CE2 Chip Enable Input OE Output Enable Input LB Lower Byte Enable Input UB Upper Byte Enable Input I/O0-I/O15 Data Inputs/Outputs VCC Power VSS Ground NC Not Connected

Stock No. 23319-01 11/01/02 2 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Functional Block Diagram Functional Description CE1 CE2 WE OE I/O0 - I/O7 MODE POWER H X X X High Z Standby1 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. Standby X L X X High Z Standby1 Standby LHL X2 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Data In Write2 Active LHHL D a t a O u t Read Active L H H H High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 8p F I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 8p F Control Logic 32K Page RAM Array Page Decode Logic Address Inputs A4 - A18 CE1# WE# OE# Input/ Output Mux and Buffers I/O0 - I/O7 UB# LB# I/O8 - I/O15 Address Word Decode Logic AddressAddress InputsA0 - A3 x 16 Word Wor d Mux x 16 bit CE2

Stock No. 23319-01 11/01/02 3 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Absolute Maximum Ratings1 1. Stresses greater than those listed above may cause permanent dam age to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 240oC, 10sec(Lead only) oC Operating Characteristics (Over Specified Temperature Range) Item Symbol Test Conditions Min. Typ1 1. Typical values are measured at Vcc=Vcc Typ., T A=25°C and not 100% tested. Max Unit Supply Voltage VCC 2.3 3.6 V Data Retention Voltage VDR Chip Disabled3 1.8 V Input High Voltage VIH VCC-0.6 V CC+0.3 V Input Low Voltage VIL –0.3 0.6 V Output High Voltage VOH IOH = 0.2mA V CC–0.2 V Output Low Voltage VOL IOL = -0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 2. This parameter is specified with the out puts disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.5 2.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 10.0 12.0 mA Page Mode Operating Supply Current @ 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) ICC3 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 4.0 mA Maximum Standby Current3 ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V 2.0 20.0 µA Maximum Data Retention Current3 IDR VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 10.0 µA

Stock No. 23319-01 11/01/02 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Power Savings with Page Mode Operation (WE = VIH) Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Page Address (A4 - A18) OE CE1 CE2 Word Address (A0 - A3) Open page Word 1 Word 2 Word 16...

Stock No. 23319-01 11/01/02 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing Item Symbol Units Min. Max. Min. Max. Read Cycle Time tRC 100 70 ns Address Access Time tAA 100 70 ns Chip Enable to Valid Output tCO 100 70 ns Output Enable to Valid Output tOE 35 35 ns Chip Enable to Low-Z output tLZ 15 10 ns Output Enable to Low-Z Output tOLZ 10 5 ns Chip Disable to High-Z Output tHZ 03 002 0 n s Output Disable to High-Z Output tOHZ 03 002 0 n s Output Hold from Address Change tOH 15 10 ns Write Cycle Time tWC 100 70 ns Chip Enable to End of Write tCW 70 50 ns Address Valid to End of Write tAW 70 50 ns Write Pulse Width tWP 50 40 ns Address Setup Time tAS 00 n s Write Recovery Time tWR 00 n s Write to High-Z Output tWHZ 30 20 ns Data to Write Time Overlap tDW 50 40 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 10 5 ns

Stock No. 23319-01 11/01/02 6 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Timing Waveform of Read Cycle (WE=VIH) Address Data Out tRC tAA tOH Data ValidPrevious Data Valid Address LB#, UB# OE# Data Valid tRC tAA tCO tHZ(1,2) tOHZ(1) tLBHZ, tUBHZ tOLZ tOE tLZ(2) High-Z Data Out tLB, tUB tLBLZ, tUBLZ CE1# CE2

Stock No. 23319-01 11/01/02 7 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE1 Control) Address Data In CE1# CE2 LB#, UB# Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE# Data Out High-Z tOW tAS tWP tDW tLBW, tUBW Address WE# Data Valid tWC tAW tCW tWR tDH LB#, UB# Data In High-Z tAS tWP tLZ tDW tLBW, tUBW Data Out tWHZ CE1# (for CE2 Control, use inverted signal)

Stock No. 23319-01 11/01/02 8 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08M163WL1A Ball Grid Array Package © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Ordering Information

Revision History

Revision # Date Change Description 01 11/01/02 Initial Release 10 mm 8 mm 0.75 mm 0.75 mm BOTTOM VIEW N08M163WL1AX-XX X I = Industrial, -40°C to 85°C 70 = 70ns @ 2.7V B = 48-ball BGA D = Known Good Die Temperature Performance Package Type Note: Add -T&R following the part number for Tape and Reel. Orders will be considered in tray if not noted.