N08L083WC2C NANOAMP | Alldatasheet

Document overview

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Technical content

Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts
  • Very low standby current 2.0µA at 3.0V (Typical)
  • Very low operating current 1.5mA at 3.0V and 1µs(Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE ) for memory expansion
  • Low voltage data retention Vcc = 1.5V
  • Very fast output enable access time 25ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Ultra Low Power Sort Available Pin Configuration Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Typical Operating Current (Icc), Typical N08L083WC2CT1 44 TSOP II Pb Free -40oC to +85oC 2.2V - 3.6V 55ns 2 µA 1.5 mA @ 1MHz PIN ONE A CE DNU DNU I/O I/O1 VCC VSS I/O I/O3 DNU DNU WE A19 A18 A17 A16 A15 A OE CE2 DNU DNU I/O I/O6 VSS VCC I/O I/O4 DNU DNU A A10 A11 A12 A13 A14 N08L083WC2C TSOP - II Pin Descriptions Pin Name Pin Function A0-A19 Address Inputs WE Write Enable Input CE1, CE2 Chip Enable Input OE Output Enable Input I/O0-I/O7 Data Inputs/Outputs VCC Power VSS Ground NC Not Connected

Stock No. 23379-A 2 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Functional Block Diagram Functional Description CE1 CE2 WE OE I/O0 - I/O7 MODE POWER H X X X High Z Standby Standby X L X X High Z Standby Standby LHL X1 1. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Data In Write3 Active LHHL D a t a O u t Read Active L H H H High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 10 pF I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 10 pF Address Inputs A0 - A3 Address Inputs A4 - A19 Word Address Decode Logic 1024K x 8 bit RAM Array Word Mux Input/ Output Mux and Buffers Page Address Decode Logic Control Logic CE1 CE2 WE OE I/O0 - I/O7

Stock No. 23379-A 3 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional oper- ation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Absolute Maximum Ratings Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –65 to 150 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC Operating Characteristics (Over Specified Temperature Range) Item Symbol Test Conditions Min. Typ1 1. Typical values are measured at Vcc=Vcc Typ., T A=25°C and not 100% tested. Max Unit Supply Voltage VCC 2.2 3.0 3.6 V Data Retention Voltage VDR Chip Disabled 1.5 V Input High Voltage VIH Vcc = 2.2V to 2.7V 1.8 VCC+0.3 VVcc = 2.7V to 3.6V 2.2 VCC+0.3 Input Low Voltage VIL Output High Voltage VOH IOH = -0.1mA, Vcc = 2.2V 2.0 VIOH = -1.0mA, Vcc = 2.7V 2.4 Output Low Voltage VOL IOL = 0.1mA, Vcc = 2.2V 0.4 VIOL = 2.1mA, Vcc = 2.7V 0.4 Input Leakage Current ILI VIN = 0 to VCC -1 1 µA Output Leakage Current ILO VOUT = 0 to VCC Output Disabled -1 1 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 2. This parameter is specified with the outputs disabled to avoi d external loading effects. The user must add current required to drive output capacitance expected in the actual system. ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.5 3.0 mA-L 1.5 3.0 Read/Write Operating Supply Current @ fmax ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 12.0 20.0 mA-L 12.0 15.0 Maximum Standby Current ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V 2.0 20 µA-L 2.0 8 Maximum Data Retention Current IDR Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V 10 µA-L 4

Stock No. 23379-A 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200µs wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100µs. Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 1V/ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF/50pF Operating Temperature -40 to +85 oC Timing Item Symbol Units Min Max Read Cycle Time tRC 55 ns Address Access Time (Random Access) tAA 55 ns Chip Enable to Valid Output tCO 55 ns Output Enable to Valid Output tOE 25 ns Chip Enable to Low-Z output tLZ 10 ns Output Enable to Low-Z Output tOLZ 5n s Chip Disable to High-Z Output tHZ 20 ns Output Disable to High-Z Output tOHZ 20 ns Output Hold from Address Change tOH 10 ns Write Cycle Time tWC 55 ns Chip Enable to End of Write tCW 40 ns Address Valid to End of Write tAW 40 ns Write Pulse Width tWP 40 ns Address Setup Time tAS 0n s Write Recovery Time tWR 0n s Write to High-Z Output tWHZ 20 ns Data to Write Time Overlap tDW 25 ns Data Hold from Write Time tDH 0 ns End Write to Low-Z Output tOW 10 ns

Stock No. 23379-A 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Timing Waveform of Read Cycle (WE=VIH) Address Data Out tRC tAA, tOH Data ValidPrevious Data Valid Address OE Data Valid tRC tAA, tCO tHZ tOHZ tOLZ tOE tLZ High-Z Data Out CE1 CE2

Stock No. 23379-A 6 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE1 Control) Address Data In CE1 CE2 Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE Data Out High-Z tOW tAS tWP tDW Address WE Data Valid tWC tAW tCW tWR tDH Data In High-Z tAS tWP tLZ tDW Data Out tWHZ CE1 (for CE2 Control, use inverted signal)

Stock No. 23379-A 7 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information Data Retention Waveform Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs Data Retention Characteristics Parameter Description Condition Min Typ Max Unit VDR Vcc for Data Retention 1.5 V ICCDR Data Retention Current Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V 10 µA-L 4 tCDR Chip Deselect to Data Retention Time 0n s tR Operation Recovery Time tRC ns Vcc CE1 or LB/UB or CE2 Data Retention Mode VDR ≥ 1.5V tCDR tR Vcc(min) Vcc(min)

Stock No. 23379-A 8 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information 18.571 18.313 10.262 10.058 SEE DETAIL B 1.194 0.991 11.938 11.735 0.40 0.30

0.80 BSC

0.597 0.406 0o-5o 0.150 0.050 0.210 0.120

Stock No. 23379-A 9 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L083WC2C Advance Information

Ordering Information

© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision Date Change Description A Jan 14. 2005 Initial Release N08L083WC2CX-XX X L I = Industrial, -40°C to 85°C 55 = 55ns T1 = 44 TSOP II Pb-Free Temperature Performance Package Type L = Ultra Low Power Sort