N02M0818L2A NANOAMP | Alldatasheet

Document overview

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Technical content

Features

  • Single Wide Power Supply Range 1.3 to 2.3 Volts
  • Very low standby current 200nA typical at 2.1V and 37 deg C
  • Very low operating current 1 mA at 2.0V and 1µs (Typical)
  • Very low Page Mode operating current 0.5mA at 1.0V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion
  • Low voltage data retention Vcc = 1.0V
  • Automatic power down to standby mode
  • TTL compatible three-state output driver Pin Configuration Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB) Operating Current (Icc), Max N02M0818L2AN 32 - STSOP I -20oC to +60oC 1.3V - 2.3V 100ns @ 1.65V 500ns @ 1.3V 450nA @ 2.3V 2.5 mA @ 1MHz N02M0818L2AD Known Good Die A11 A13 WE CE2 A15 Vcc A17 A16 A14 A12 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 I/O0 N02M0818L2A STSOP Pin Descriptions Pin Name Pin Function A0-A17 Address Inputs WE Write Enable Input CE1, CE2 Chip Enable Input OE Output Enable Input I/O0-I/O7 Data Inputs/Outputs VCC Power VSS Ground

(DOC#14-02-036 Rev C ECN#01-0887) 2 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A Functional Block Diagram Functional Description CE1 CE2 WE OE I/O0 - I/O7 MODE POWER H X X X High Z Standby1 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. Standby X L X X High Z Standby1 Standby LHL X2 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Data In Write2 Active LHHL D a t a O u t Read Active L H H H High Z Active Active Capacitance1 1. These parameters are verified in device characterization and are not 100% tested Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC 8p F I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 8p F Control Logic Page Decode Logic Address Inputs A 4 - A17 Input/ Output Mux and Buffers I/O0 - I/O7 Address Word Dec ode Logic AddressAddress Inputs A0 - A3 16K Page x 16 word x 8 bit RAM Word Mux CE1 CE2 WE OE VCCQ (opt)

(DOC#14-02-036 Rev C ECN#01-0887) 3 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A Absolute Maximum Ratings1 1. Stresses greater than those listed above may cause permanent dam age to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 3.0 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -20 to +60 oC Soldering Temperature and Time TSOLDER 240oC, 10sec(Lead only) oC Recommended Operating Limits (Not all inclusive values tested)1 1. These limits are the expected operating c onditions for this device. Only selected points within this range of conditions are specifically tested and guaranteed. Item Symbol Test Conditions Min. Max Unit Core Supply Voltage VCC 1.3 2.3 V Data Retention Voltage VDR Chip Disabled (Note 3) 1.0 V Input High Voltage VIH 0.7VCCQ VCCQ+0.5 V Input Low Voltage VIL –0.5 0.3VCCQ V Output High Voltage VOH IOH = 0.2mA V CCQ–0.3 V Output Low Voltage VOL IOL = -0.2mA 0.3 V Input Leakage Current ILI VIN = 0 to VCC 0.1 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.1 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. ICC1 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 2.5 mA Read/Write Operating Supply Current @ 85 ns Cycle Time2 ICC2 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 13.0 mA Standby Current3 3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is low and CE2 is high. ISB1 VIN = VCC or 0V Chip Disabled tA= 37oC, VCC = 2.3 V 450 nA Data Retention Current3 IDR VCC = 1.0V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.0 µA

(DOC#14-02-036 Rev C ECN#01-0887) 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A Recommended Timing Limits - Read Cycle (Not all inclusive values tested) Item Symbol 1.3 - 2.3 V 1.65 - 2.3 V Units Min. Max. Min. Max. Read Cycle Time tRC 500 100 ns Address Access Time tAA 500 100 ns Chip Enable to Valid Output tCO 500 100 ns Output Enable to Valid Output tOE 200 50 ns Chip Enable to Low-Z output tLZ 100 20 ns Output Enable to Low-Z Output tOLZ 50 10 ns Chip Disable to High-Z Output tHZ 01 5 00 3 0 n s Output Disable to High-Z Output tOHZ 01 5 00 3 0 n s Output Hold from Address Change tOH 50 10 ns Recommended Timing Limits - Write Cycle (Not all inclusive values tested) Item Symbol 1.3 - 2.3 V 1.65 - 2.3 V Units Min. Max. Min. Max. Write Cycle Time tWC 500 85 ns Chip Enable to End of Write tCW 400 50 ns Address Valid to End of Write tAW 400 50 ns Address Setup Time tWP 300 40 ns Write Pulse Width tAS 00 n s Write Recovery Time tWR 00 n s Write to High-Z Output tWHZ 50 15 ns Data to Write Time Overlap tDW 300 40 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 50 10 ns Output Hold from Address Change tOH 00 ns

(DOC#14-02-036 Rev C ECN#01-0887) 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) Timing Waveform of Read Cycle (WE=VIH) Address Data Out tRC tAA tOH Data ValidPrevious Data Valid Address OE Data Valid tRC tAA tCO tHZ tOHZ tOLZ tOE tLZ High-Z Data Out CE1 CE2

(DOC#14-02-036 Rev C ECN#01-0887) 6 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A Timing Waveform of Write Cycle (WE control) Timing Waveform of Write Cycle (CE1 Control) Address Data In CE1 CE2 Data Valid tWC tAW tCW tWR tWHZ tDH High-Z WE Data Out High-Z tOW tAS tWP tDW Address WE Data Valid tWC tAW tCW tWR tDH Data In High-Z tAS tWP tLZ tDW Data Out tWHZ CE1 (for CE2 Control, use inverted signal)

(DOC#14-02-036 Rev C ECN#01-0887) 7 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A 32-Lead STSOP-I Package (N32) Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash 13.40±0.20 8.0±0.10 SEE DETAIL B 1.10±0.15 11.80±0.10 0.27 0.17 0.50mm REF DETAIL B 0.80mm REF 0o-8o 0.20 0.00

(DOC#14-02-036 Rev C ECN#01-0887) 8 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N02M0818L2A

Ordering Information

© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision # Date Change Description A Dec 2002 Initial Release B January 2004 Updated with power characteristics C July 2004 General Update N02M0818L2AX-XX X 20°C to 60°C 100 = 100ns @ 1.65V N = 32-pin STSOP I D = Known Good Die Temperature Performance Package Type