MTS2072G6

MTS2072G6 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

Features

• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTS2072G6 TSOP-6 G：Gate S：Source D：Drain G1 Pin 1

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 2/13 MTS2072G6 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol N-channel N-channel Unit Drain-Source Breakdown V oltage BVDSS 60 30 V Gate-Source V oltage VGS ±20 ±20 V Continuous Drain Current @TA=25 °C, VGS=10V (Note 1) ID 0.53 5.6 A Continuous Drain Current @TA=70 °C, VGS=10V (Note 1) ID 0.42 4.5 A Pulsed Drain Current (Note 2) IDM 1 20 A Pd 1.14 W Total Power Dissipation (Note 1) Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 110 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. Tr 1, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - VGS=0, ID=250μA VGS(th) 0.9 1.5 2.4 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±20V , VDS=0 - - 1 VDS=60V , VGS=0 IDSS - - 10 μA VDS=48V , VGS=0, Tj=70°C - 1.2 2.5 ID=500mA, VGS=10V *RDS(ON) - 1.6 3 Ω ID=100mA, VGS=4.5V *GFS 100 215 - mS VDS=10V , ID=100mA Dynamic Ciss - 31 - Coss - 6 - Crss - 4.1 - pF VDS=10V , VGS=0, f=1MHz *td(ON) - 2.5 - *tr - 6.3 - *td(OFF) - 6 - *tf - 4.4 - ns VDS=30V , ID=100mA, VGS=10V , RG=25Ω *Qg - 0.9 - *Qgs - 0.1 - *Qgd - 0.3 - nC VDS=30V , ID=0.53A, VGS=10V Source-Drain Diode *IS - - 0.53 *ISM - - 1 A *VSD - 0.8 1.2 V VGS=0V , IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 3/13 MTS2072G6 CYStek Product Specification Tr 2, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - 1 μA VDS=24V , VGS=0 IDSS - - 25 μA VDS=24V , VGS=0, Tj=70°C - 16.6 25 ID=5A, VGS=10V *RDS(ON) - 24.7 35 mΩ ID=3A, VGS=4.5V *GFS - 6 - S VDS=5V , ID=4A Dynamic Ciss - 718 - Coss - 78 - Crss - 69 - pF VDS=15V , VGS=0, f=1MHz *td(ON) - 7.4 - *tr - 19 - *td(OFF) - 35 - *tf - 13 - ns VDS=15V , ID=1A, VGS=10V , RG=6Ω *Qg - 10 - *Qgs - 2.5 - *Qgd - 3.1 - nC VDS=15V , ID=5.6A, VGS=10V Source-Drain Diode *IS - - 5 *ISM - - 20 A *VSD - 0.82 1.2 V VGS=0V , IS=5A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 4/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 1 Typical Output Characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0123456 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 3.5V VGS=2V 2.5V 4.5V 10V, 8V, 7V, 6V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.001 0.01 0.1 1 ID, Drain Current(A) RDS(on) , Static Drain-Source On-State Resistance(Ω) VGS=2.5V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=500mA RDS(ON)@Tj=25°C : 1.2Ω VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(Ω) ID=500mA

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 5/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 1(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=110°C/W Typical Transfer Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 012345 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Gate Charge Characteristics 0 0.2 0.4 0.6 0.8 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=30V ID=0.53A Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) VDS=10V Pulsed Ta=25°C

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 6/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 1(Cont.) Maximum Safe Operating Area 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100m 1ms 100μs TA=25°C, Tj=150°C VGS=10V, RθJA=110°C/W Single Pulse RDS(ON) Limit Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180 °C/W

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 7/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 2 Typical Output Characteristics 012345 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V, 4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=5A VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=5A RDSON@Tj=25°C : 16.6mΩ

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 8/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 2(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th),Normalized Threshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=5.6A Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=110°C/W

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 9/13 MTS2072G6 CYStek Product Specification N-channel Typical Characteristics, Tr 2(Cont.) Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100m 1ms 100μs TA=25°C, Tj=150°C VGS=10V, RθJA=110°C/W Single Pulse Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180 °C/W

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 10/13 MTS2072G6 CYStek Product Specification Reel Dimension

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 11/13 MTS2072G6 CYStek Product Specification Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 12/13 MTS2072G6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 13/13 MTS2072G6 CYStek Product Specification TSOP-6 Dimension Marking: 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Style: Pin 1. Gate1 (G1) Pin 2. Source1 (S1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) 2072 □□□□ Device Name Date Code D 2.820 3.020 0.111 0.119 θ 0° 8° 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.