MMBD5148N3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Small plastic SMD package
  • High switching speed: max. 4ns
  • Continuous reverse voltage: max. 100V
  • Repetitive peak reverse voltage: max. 100V
  • Repetitive peak forward current: max. 450mA.

Applications

  • High-speed switching in thick and thin-film circuits. Common cathode 1：Anode Anode Anode2：Anode 3：Common cathode

CYStech Electronics Corp. Spec. No. : C303N3S Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 2/6 MMBD5148N3 CYStek Product Specification Absolute Maximum Ratings @TA=25℃ Parameters Symbol Min Max Unit Repetitive peak reverse voltage VRRM - 100 V Continuous reverse voltage VR - 100 V Continuous forward current(single diode loaded) - 215 Continuous forward current(double diode loaded) IF - 125 mA Repetitive peak forward current IFRM 450 mA Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1μs t=1ms t=1s IFSM 0.5 A A A Total power dissipation(Note 1) Ptot 250 mW Junction Temperature Tj - 150 °C Storage Temperature Tstg -65 +150 °C Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Conditions Min Typ. Max Unit Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA - - 715 855 1.25 mV mV V V Reverse current IR VR=100V VR=25V ,Tj=150℃ VR=75V ,Tj=150℃ - - 100 nA μA μA Diode capacitance Cd VR=0V , f=1MHz - - 1.5 pF Reverse recovery time trr when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA - - 4 ns Forward recovery voltage Vfr when switched from IF=10mA tr=20ns - - 1.75 V Thermal Characteristics Symbol Parameter Conditions Value Unit Rth,j-tp thermal resistance from junction to tie-point 360 ℃/W Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W Note 1: Device mounted on an FR-4 PCB.

CYStech Electronics Corp. Spec. No. : C303N3S Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 3/6 MMBD5148N3 CYStek Product Specification Characteristic Curves Forward Current vs Ambient Temperature 100 125 150 175 200 225 250 0 50 100 150 200 Ambient Temperature---Ta(℃) Forward Current---IF(mA) single diode loaded double diode loaded Forward Current vs Forward Voltage 100 125 150 175 200 225 250 275 Forward Voltage---VF(V) Forward Current---IF(mA) Non-repetitive peak forward current vs pulse duration 0.1 100 1 10 100 1000 10000 Pulse Duration---tp(μs) Non-repetitive peak forward current---IFSM(A) Diode Capacitance vs Reverse Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR(V) Diode Capacitance---CD(pF)

Ordering Information

Device Package Shipping Marking MMBD5148N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel A4

CYStech Electronics Corp. Spec. No. : C303N3S Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 4/6 MMBD5148N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C303N3S Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 5/6 MMBD5148N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C303N3S Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 6/6 MMBD5148N3 CYStek Product Specification SOT-23 Dimension *: Typical Inches Millimeters Inches Millimeters H JKD A L GV C B S Style: Pin 1.Anode 2.Anode 3.Common cathode Marking: TEA4 Device Code 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.