MTP8N60 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
J.£.is.£.u ^s-mL-C-onauctoi -I 10 duct i, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP8N60 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor
- FEATURES
- Drain Current-ID= 7.5A@ TC=25"C
- Drain Source Voltage- : VDSS= 600V(Min)
- Static Drain-Source On-Resistance :RDs(on) = 1.20 (Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25'C Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.5 147 150 -55-150 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.85 62.5 UNIT
- c/w 'CM/ i i 1 2 0(1) I PIN 0(2) O LGate 2. Drain 3. Source TO-220C package m I turt A f * * H K f . B H
- * V -«*j x k?~y 10.00V rr rb03" c[ J DIM A B C D F G H J K L Q R S U U mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 ^2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 t i Quality Semi-Conductors
N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)DSS Vos(th) RoS(on) loss loss VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-Resistance Gate-Body Leakage Current Zero Gate Voltage Drain Current Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; lo= 0.25mA VGS=10V;ID=3.75A VGS= ±20V;VDS=0 VDS= 600V; VGS= 0 ls= 7.5A; VGS= 0 MIN 600 MAX 1.2 ±100 1.4 UNIT V V Q nA nA V