MTP8N50E NJSEMI | Alldatasheet
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4 , New Jevsey Semi-Conductor Products, Dne. 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 Do S\\ MTP8N50E = ) ol G / if No’ wit ii TMOS POWER FET s “Uy
8.0 AMPERES
500 VOLTS
R, = 0.8 OHM CASE 2214-08, Style § DS(on) ia TO-220AB MAXIMUM RATINGS (T, = 25°C unless otherwise noted) a Gate-to-Source Voltage — Continuous Vos +20 Vde ~ Non-repetitive (tp < 10 ms) Vosm +40 Vpk Drain Current — Continuous @ To = 25°C io 8.0 Adc — Continuous @ Tc = 100°C Ip 5.0 — Single Puise (tp < 10 us) tom 32 Apk Total Power Dissipation @ Te = 25°C 125 Watts Derate above 25°C . 1.0 WiC ‘Single Pulse Drainto-Source Avalanche Energy — STARTING T, = 25°C. Eas 510 mJ (Vpp = 25 Vde. Veg = 10 Vie. PEAK I, = 8.0 Apk, L = 16 mH, Rg = 25 2) Thermal Resistance — Junction-to-Case Ruse 1.0 = Junction-to-Ambient Roun 62.5 °c [_Maximum Lead Temperature for Soldering Purposes, We" fromCaseforssec. [|_| eo NJ semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi* Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T¢ = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Vieryoss (Ves = 0 Ve, Ip = 250 wAdc) Vdc Temperature Coefficient (Positive) myrc Zero Gate Voltage Drain Current loss WwAde (Vps = 500 Vde, Veg = 0 Vdc) 250 (Vps = 400 Vde, Veg = 0 Vdc, Ty = 125°C) 1000 Gate-Body Leakage Current loss nade (Ves = #20 Vde, Vos = 0 Vde) 100 ON CHARACTERISTICS (1) Gate Threshold Voltage Vesitn) (Vos = Vos. Ip = 250 pAde) 20 28 40 Vde Threshold Temperature Coefficient (Negative) 63 — | mvec Static Drain-to-Source On-Resistance Rosion) Ohms (Ves = 10 Vde, Ip = 4.0 Ado) 08 Drain—to-Source On-Voltage (Vgg = 10 Vdc) Vpsiony Vdc (Ip = 8.0 Ade) 50 72 (Ip = 4.0 Ade, Ty = 125°C) - 64 Forward Transconductance Qs mhos (Vos = 15 Vde, Ip = 4.0 Adc) DYNAMIC CHARACTERISTICS woos omy [Go| | 10 [86 | utput Capacitance f= DMR) Coss [| - | 190 246 ‘SWITCHING CHARACTERISTICS @) re ee [=e (Rgo + C17 = 9.1. Q) ate Charge a Wos=400Vde.tp=s0ac, | o% [ — | ao [= | a Lc | SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Vsp Vde (Ig = 8.0 Adc, Vgg = 0 Vdc} 12 ig=20A0,Veg=ove, [ & | — | ve | — | INTERNAL PACKAGE INDUCTANCE Internat Drain Inductance Lp (Measured from the drain lead 0.25" from package to center of die) internal Source Inductance Ls . (Measured from the source lead 0.25” from package to source bond pad) 75 (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% (2) Switching characteristics are independent of operating junction temperature. .