MTP8N10E NJSEMI | Alldatasheet

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tS^ml-Gonauctoi \\f\\oducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N10E TMOS POWER FETs

8 AMPERES

'DSIonJ = 05 OHM

100 VOLTS

MAXIMUM RATINGS (Tj 25-C unless otherwise noled) THERMAL CHARACTERISTICS Rating Symbol Drain-Source Vallage VDSS Drain-Gate Voltage IRQ3 - 1 Mil) VDGR Gate-Source Voltage — Continuous V^g — N On -repetitive (tp i 50 /is) VGSM Drain Current — Continuous Ip — • Pulsed I0M Total Power Dissipation :n TC -- 25"C . PQ Derate above 25 'C Operaiing and Storage Temperature Range Tj, ^sla Vglue TOO 100 - 20 -40 e 0.6 -65 lo 150 Unit Vdc Vdc Vdc Vpk Adc Wans W.'°c Thermal Resistance — Junction to Case — Junction to Ambienl Maximum Lead Temperature for Soldering Purposes, 1 8" from case for 5 seconds RffJC RftJA TU 1,67 62.5 275 -c.w I i NJ Semi-conductors reserves the right to change test conditions, parame^ limits and package dimcns.ons without notice. Information ^urn.shed by MJ Sem.-- Conductors is believed to be both accurate and reliable at the time of going to pre«. However NJ Semi-Conductors assumes no respons.b.l.ty for any errors or omissions discovered ir its use NJ Semi-Conductors encourages customers to venfy that datasheet are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS <TC = 25°C unless otherwise noted] Characteristic Symbol Mix Unit Off CHARACTERISTICS Drain-Source Breakdown Voltage <VGS = °. 'D = °-25 mA> Zero Gate Voltage Drain Current !VDS - Rated VDSS. VGS - 0] WDS = Ra^Bd VDSS. VGS - o. TJ - 125-0 Gate-Body Leakage Current. Forward (VGSF - 20 Vdc. VDS = 0] Gats Body Leakage Current. Reverse (VQSR ; 2a Vdc- VDS = nl VIBRIDSS bss "GSSF IGSSR 100 100 100 100 Vdc MA nAdc nAdt ON CHARACTERISTICS* Gale Threshold Voltage Tj -= 100°C Static Drain-Source On -Resistance (VQS = 10 Vdc, ID = * Add Drain-Source On-Voltage [VQS = 10V) do = a Adc) (ID - 4 Adc. Tj - 100EC) Forward Trsnsconductance (Vrjg = 16V, ID = * A) vGS(th) 1.5 rDS(on| — VDSIOn, Bpg ^ 4.5 0.5 Vdc Ohm Vdc 4.8 — mhos DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Undamped Drain-to-Source Avalanche Energy See Figure$ 14 and 15 [ID - 20 A, VDD - 2S V. TC - 25'C. Single Pulse, Non-repetitive) (ID - 8 A, VDD - 25 V, TC = 25DC, P.W s 200 Ms, Duly Cycle * IV WDSR 170 mJ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance <VDS - 25 V, VGS . 0, f - 1 MHi) See Figure 16 ciss CQSS Crss 600 400 100 pF SWITCHING CHARACTERISTICS* |Tj - 100°C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge <VDD - 26 v, ID = 4 A See Figure 9 IVos = 0.8 Rated VDSS> 10 - Rated Ip, VGS = 10 V] See Figures 17 and 18 'dfont V td(off) tf ^gs Qgd 15 (Typ) 7.5 lTyp>

7.5 ITyp)

SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voliage Forward Turn-On Time Reverse Recovery Time (IS ~ 4 A VGS 01 VSD 1.4|Typ) 'on Vr 1.7 Vdc Limited by stray inductance

70 ITyp)

INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center ol die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance IMeasured from the source lead 0.25" from package to source bond pad.l Ld LS 3.5 (Typ) 4.5 [Typ] 7.5 (Typ) nH

  • Pulse Test PUs* Width * 300 >is. Duty C/ele « 2%