MTP8N08 NJSEMI | Alldatasheet
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, O ne.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N08 MTP8N10 TMOS POWER FETs
8 AMPERES
TDS(on) = 0-5 OHM 80 and 100 VOLTS MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 Mill Gate-Source Voltage — - Continuous — Non-repetitive ltp f- 50 >isl Drain Current Continuous Pulsed Symbol VDSS VDGR VGS VGSM ID 'DM Tola1 Power Dissipation ci TC = 25 C ', PD Derate above ZS'C Operating and Storage Temperature Range Tj, Tslg MTM or MTP 8N08 8N10 100 100 1-20 r<JO 0.6 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Wans W;C THERMAL CHARACTERISTICS CASE 221A-04. TO-220 A B Thermal Resistance Junction to Case Junction to Ambient TO-220 Maximum Lead Temperature for Soldering Purposes. 1.'8" from case for 5 seconds RHJC ^-^7 R OJ A 62 . 5 TL 275 "CW C NJ Scrni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi=- Conductors is believed to be both accurate and reliable at the time of going to press. However Nj Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ 5emi-Canductors encourages customers to verify that rfdtaiheet are current before placing orders. Quality Semi-Conductors
MTP8N08.10 ELECTRICAL CHARACTERISTICS (Tc -- 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTEHtSTICS Max Unit Drain-Source Breakdown Voltage IVQS = 0. ID - 0.25 mAI MTP8N08 MTP8N10 Zero Gate Voltage Drain Current <VDS = Ra'ed VDSS. VGS = 01 <VDS -- 0,8 Hated VQSS, VGS 0. Tj ' 125-C) Gate-Body Leakage Current. Forward IVQSF = 20 Vdc, Vog -- 0) Gale-Body Leakage Current, Reverse {VQSR - 20 tfdc. VQ$ ^ Ol V(BR)DSS IDSS IGSSF 'GSSR 80 — 100 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage Tj - 100 C Static Dram-Source On-Res Drain-Source On-Voltage (V (ID 8 Adc) (ip -= * Adc. TJ -- wo Forward Transconductance stance {VGS ^ ^ vdc, ID ^ 4 Adcl GS 10 v> (VDS - 15V, ID - 4 A) VGS(th) rDS(on) vDSlon) 9FS 2 4.5 1.5 i 4 0-5 — 4.8 — 4 1.5 ; — vac Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance <VD$ 25 V. VGS - 0, f = 1 MHz) See Figure 11 CiS5 COBS crss 400 — 350 — 100 pF SWITCHING CHARACTERISTICS" (Tj - 100JCI Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge [VDO ^ 25 V. ID = 0.5 Rated Ip See Figures 9, 13 and 14 (VDS " 0,6 Rated VQSS, ID -- Rated ID. VG5 - 10 V] See Figure 12 'd(on) tr 'diofli M Qg Q9S Qgo 13(TVpl
6 ITypt
7 (Typ> 120 ns nC SOURCE DRAIN DIODE CHARACTERISTICS- Forward On-Voltage Forward Turn-On Time Reverse Recovery Time ll£ ~ Rated ID VGS = 01 VSD 'on *rr 1 5 iTyp) | 3 Vdc Limited by stray inductance 300<Typl ( — ns INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance ; Ljj [Measured from tne contact screw on tab to center of die) ! {Measured (ram the drain lead 0,25" from package to center of die) [ Internal Source Inductance • Ls {Measured from tie source lead 0.25" from package to source bond pad. 1}
3.5 ITyp)
4-5 <Typ, 7.5 (Typ) — nH
- Pu.se Tesi. Pulse Width s 300 MS. Dury Cycle * 2"'