MTP5N60 NJSEMI | Alldatasheet

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Technical content

i, LJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP5N60

  • FEATURES
  • Drain Current -ID= 4.5A@ TC=25°C
  • Drain Source Voltage- : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : Ros(on) = 2.5 Q (Max)
  • Avalanche Energy Specified
  • Fast Switching
  • Simple Drive Requirements DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @Tc=25°C Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 4.5 104 150 -55-150 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.2 62.5 UNIT
  • c/w 'C/W !•[ — w i • \\N 1 2 ;. 0(2) 5(3) LGate

2 Drain

  1. Source TO-220C package tjoj A i t «.. B » J-£ft MLOOV K T 1 i "•~ F "*" r. ' rr DM A B C D F G H J K L R S u V mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — *S06 * *-J Quality Semi-Conductors

N-Channel Mosfet Transistor

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL V(BR)DSS Vcs(th) RDS(on) loss loss VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-Resistance Gate-Body Leakage Current Zero Gate Voltage Drain Current Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; b= 0.25mA VGs=10V;lD=2.25A VGS= ±20V;VDS=0 VDS= 600V; VGS= 0 ls= 4.5A; VGS= 0 MIN 600 MAX 2.5 ±100 1.4 UNIT V V Q nA uA V