MTP5N35 NJSEMI | Alldatasheet

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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs,

5.5 A, 350 V/400 V

Power And Discrete Division

Description

These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

  • VQS Rated at ±20 V
  • Silicon Gate for Fast Switching Speeds TO-220AB
  • "DSS. VDS(on). »w» * VQS(lh) apecmi IRF330 IRF730 Temperature |RF331 |RF?31 ' Rua9ed IRF332 IRF732 IRF333 IRF733 MTM5N35 MTP5N3S Maximum Ratings MTM5N4° MTPSN4° Symbol VDSS VDOR VGS Tj, Tslg TL Characteristic Drain to Source Voltage Drain to Gate Voltage Gate to Source Voltage Operating Junction and Storage Temperature Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Rating IRF330/332 IRF730/732 MTM/MTP5N40 400 400 ±20 -55 to +150 275 Rating IRF331/333 IRF731/733 MTM/MTP5N36 350 350 ±20 -55 to +150 275 Unit V V V Maximum On-State Characteristics RDS (on) ID Static Drain-to-Source On Resistance Drain Current Continuous Pulsed IRF330/331 IRF730/731 1.0 5.5 IRF332/333 IRF732/733 1.5 4.5 MTM5N35/40 MTP5N35/40 1.0 5.0 n A Maximum Thermal Characteristics RSJC PD Thermal Resistance, Junction to Case Total Power Dissipation at Tc = 25°C 1.67 1.67 1.67 °C/W W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Mln Max Unit Test Conditions OH Characteristics V(BR)DSS loss IGSS Drain Source Breakdown Voltage1 IRF330/332/730/732 IRF331/333/731/733 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF330-333 IRF730-733 400 350 250 1000 ±100 ±500 V MA MA nA VGS - 0 V, ID - 250 MA VDS - Rated VOSs, VGS - 0 V VDS - 0-8 x Rated VDSS. VGS = 0 V, TC=125°C VQS = ±20 v, VDS = o v On Characteristics VQS(th) RDS(on) (to Gate Threshold Voltage Static Drain-Source On-Resistance2 IRF330/331/730/731 IRF332/333/732/733 Forward Transconductance 2.0 3.0 4.0 1.0 1.5 V n s as) ID = 250 MA, VDS - VGS VGS = 10 V, ID = 3.0 A VDS = 10 v, ID = 3.0 A Dynamic Characteristics Qss coss c,93 Input Capacitance Output Capacitance Reverse Transfer Capacitance 900 300 BO PF PF pF VDS - 25 V, VGS = 0 V f-1.0 MHz Switching Characteristics (Tc - 25'C, Figures 12, 13) *d(on) V tdfoff) Qg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge ns ns ns ns nC VDD=175 V, ID "3.0 A VGS = 10 V, RGEN = 15 fi RGS-15 fl VGS -10 v, ID = 7.0 A VDD = 180 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics VSD tn Diode Forward Voltage IRF330/331/730/731 IRF332/333/732/733 Reverse Recovery Time 400 1.6 1.5 V V ns ls = 5.5 A; VGS = 0 V ls = 4.5 A; VQS - 0 V Is = 5.5 A; dls/dt = 100 A/MS

Electrical Characteristics (Tc •=• 25°C unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics V(BH)DSS loss 'ass Drain Source Breakdown Voltage1 MTM/MTP5N40 MTM/MTP5N35 Zero Gate Voltage Drain Current Gate-Body Leakage Current 400 350 0.25 2.5 ±500 V mA rtiA nA VQS - 0 V, b - 5.0 mA VDS = 0.85 x Rated VDSs, VGS - o v VDS = 0.85 x Rated VDss. VQS-O v, Tc=ioo°c Vss = ±20 V, VDS-O V On Characteristics Vos(tn) RDS(on) Vos(on) 9ls Gate Threshold Voltage Static Drain-Source On-Resistance2 Drain-Source On-Voltage2 Forward Transconductance 2.0 1.5 2.0 4.5 4.0 1.0 2.5 6.2 5.0 V V V V V S (U) ID -1.0 mA, VDS = VQS ID = 1.0 mA, VDS = VGS TC-100°C VGS = 10 V, ID -2.5 A VQS -10 V; ID -2.5 A VGS -10 V, ID -5.0 A VGS -10 V, ID = 2.5 A TC = 100°C V0s=10 V, ID = 2.5 A Dynamic Characteristics Ciss GOSS cres Input Capacitance Output Capacitance Reverse Transfer Capacitance 1200 300 PF PF PF VDS - 25 V, VQS = 0 V ( = 1.0 MHz Switching Characteristics (Tc = 25°C, Figures 12, 13)3 td(on) V td(o«) tf Qg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge 100 200 100 ns ns ns ns nC VDD = 25 V, ID = 2.5 A VGS =10 V, RQEN = 50 n RGS = 50 n VGS =10 V, ID = 7.0 A VDD -180 V HotM 1. Tj-+25°C to +150'C 2. Pulse test: Pulsa width < 60 (is. Duty cycle < 1% 3. Switching time measurements performed on LEM TR-58 test equipment.