MTP4N50E NJSEMI | Alldatasheet

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zSzmi-Condu.cto'i \\Pioducki, dnc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's™ Data Sheet TMOSE-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Capability Specified at Elevated Temperature
  • Low Stored Gate Charge for Efficient Switching
  • Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
  • Source-to-Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) MTP4N50E TWOS POWER FET

4.0 AMPERES

500 VOLTS

RDS(on) = 1-5 OHMS D 9 GO Ml—, o s TO-220AB Rating Drain-Source Voltage Drain-Gate Voltage (RQS = 1 -0 Mn) Gate-Source Voltage — Continuous — Non-repetitive Drain Current — Continuous — Pulsed Total Power Dissipation @ TQ = 25"C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID 'DM PD TJ, Tstg Value 500 500 ±20 ±40 4.0 0.6 -55 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C CC UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (Tj < 150°C) Single Pulse Drain-to-Source Avalanche Energy — Tj = 25°C — Tj = 100DC Repetitive Pulse Drain-to-Source Avalanche Energy WDSR(D WDSR (2) 280 7.4 mJ THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds R0JC R6JA TL 1.67 62.5 260 cc/w (1)VDD = 50V, ID = 4.0 A (2) Pulse Width and frequency is limited by Tj(max) and thermal response N.I Semi-Contluetors reserves the rigiif to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by NJ Semi-Conductors is believed lo be both accurate and reliable at (he time of going in press. I lm\\e\\er, N.I Semi-Conductors assumes no responsibility for anv errors or omissions discovered in its u^c. N.I Semi-C 'ondticlors encmira.ues customers (o verily that datasheets are current before placing orders. Qualify Semi-Conductors

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Characteristic Symbol Win Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0, ID = 250 (iAdc) Zero Gate Voltage Drain Current (VDS = 500 V, VQS = °) (VDS = 400 V, VGS = 0. Tj = 125°C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VQS = 0) Gate-Body Leakage Current, Reverse (VQSR = 20 Vdc, VDS = °) V(BR)DSS IDSS IGSSF IGSSR 500 0.25 1.0 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS- ID = 250 nAdc) (Tj = 125"C) Static Drain-Source Qn-Resistance (VQS = 10 Vdc, to = 2.0 A) Drain-Source On-Voltage (VQS = 10 Vdc) (ID = 4.0 Adc) (ID = 2.0 A, Tj = 100°C) Forward Transconductance (VDS = 15 Vdc, ID = 2.0 A) VGS(th) ^DS(on) vDS(on) 9FS 2.0 1.5 1.5 1.3 4.0 3.5 1.5 7.5 6.0 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 v, VGS - °. f= 1.0MHz) Ciss coss Crss 775 PF SWITCHING CHARACTERISTICS* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VQS(on)=10V) (VDS - 4°° v, ID = 4-° A. VGS = iov) 'd(on) tr td(off) tf Qg Qgs Qgd 3.5 ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On— Voltage Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, di/dt = 100 A/us) VSD lon trr 1.4 760 Vdc ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad) Ld LS 3.5 4.5 7.5 nH * Indicates Pulse Test: Pulse Width = 300 us Max, Duty Cycle < 2.0%. ** Limited by circuit inductance.