MTP4N45 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

S.IILS.U , li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 N-Channel Power MOSFETs,

4.5 A, 450 V/500 V

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

  • VGS Rated at ± 20 V
  • Silicon Gate for Fast Switching Speeds
  • IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated Temperature
  • Rugged Maximum Ratings TO-220AB IRF430 IRF431 IRF432 IRF433 MTM4N45 MTM4N50 IRF830 IRF831 IRF832 IRF833 MTP4N4S MTP4N50 Symbol VDss VDGR VGS Tj, Tslfl TL Characteristic Drain to Source Voltage Drain to Gate Voltage RQS = 20 kfl Gate to Source Voltage Operating Junction and Storage Temperature Maximum Lead Temperature for Soldering Purposes, 1/8' From Case for 5 s Rating IRF430/432 IRF830/B32 MTM/MTP4N50 500 500 ±20 -55 to +150 275 Rating IRF431/433 IRF831/833 MTM/MTP4N4S 450 450 ±20 -55 to +150 275 Unit V V V Maximum On-State Characteristics RDS(on) ID Static Drain-to-Source On Resistance Drain Current Continuous Pulsed IRF430/431 IRF830/831 1.5 4.5 IRF432/433 IRF832/833 2.0 4.0 MTM/MTP4N45 MTM/MTP4N45 1.5 4.0 n A Maximum Thermal Characteristics RSJC RSJA PD Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Total Power Dissipation at Tc - 25°C 1.67 1.67 1.67 "C/W °c/w w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Win Max Unit Test Conditions Off Characteristics V(BR)DSS bss less Drain Source Breakdown Voltage1 IRF430/432/830/832 IRR31/433/831/833 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF430-433 IRF830-833 500 450 250 1000 ±100 ±500 V UA M nA VGS - 0 V, b = 250 /uA Vps = Rated VDSs, VGS = 0 V VDS = 0.8 x Rated VDSS, VQS-O V, TC=125°C VGS - ±20 V. VDS = 0 V On Characteristics Vosph) RDS(on) ais Gate Threshold Voltage Static Drain-Source On-Resistanoe2 IRF430/431/830/831 IRF432/433/832/833 Forward Transconductance 2.0 2.S 4.0 1.5 2.0 V n S ftj) b = 250 |uA, VDS = VGS VQS =10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Dynamic Characteristics ciss GOSS GISS Input Capacitance Output Capacitance Reverse Transfer Capacitance 800 200 PF pF PF VDS = 25 V, VQS - 0 V f - 1.0 MHz Switching Characteristics (TC = 25'1C, Figures 12. 13) td(on) tr td(oH) Symbol Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge ns ns ns ns nC VQD = 225 V, ID - 2.5 A VGS= 10 V, RGEN = 15 H RGs = 15 fl VGS- 10 V, ID = 7.0 A VDS = 180 v Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics VSD t,, Diode Forward Voltage IRF430/431/830/831 IRF432/433/832/833 Reverse Recovery Time 600 1.4 1,3 V V ns ls = 4.5 A; VGS - 0 V ls = 4.0 A; VGS - 0 V ls = 4.5 A; dls/dt=- 100 A/jjS Notes 1- Tj=+a5°C to +1EO-C 2. Pulso last Pulse width < 60 (is. Duty cycle < 1 %

Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Mln Max Unit Test Conditions Off Characteristics V(BR)DSS loss IGSS Drain Source Breakdown Voltage1 MTM/MTP4N50 MTM/MTP4N45 Zero Gate Voltage Drain Current Gate-Body Leakage Current 500 450 0.25 2.5 ±500 V mA mA nA VGS - 0 V, b - 5-0 mA Vos = 0.85 x Rated VDSS, VGS - 0 V VDs - 0.85 x Rated VQSS. VQS^O V. TC=100°C VGS = ± 20 V, VDS = 0 V On Characteristics Vas(ih) RDS(on) VDS(on) 9ls Gate Threshold Voltage Static Drain-Source On-Resistance2 Drain-Source On-Voltage2 Forward Transconductance 2.0 1.5 2.0 4.5 4.0 1.5 3.0 7,0 6.0 V V n V V V S (U) ID "1.0 mA, VDS = VGS ID =1.0 mA, VDS = VGS, TC = 100°C Ves = 10 V, I0 = 2.0 A VQS -10 V, ID = 2,0 V VQs-10 V, ID = 4.0 A VGS =10 V, ID -4.0 A TC-100«C VDS =10 V, ID = 2.0 A Dynamic Characteristics Q83 coss Qss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1200 300 pF PF PF VDS = 25 V, VGS = 0 V f=1.0 MHz Switching Characteristics (Tc = 25°C, Figures 12, 13)3 tdton) td(oll) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge 100 200 100 ns ns ns ns nC VDD = 25 V, ID = 2.0 A VGS =10 V, RGEN-SO « RGS = 50 S7 VGS -10 V, ID = 7.0 A VDD =180 V Motes 1. Tj-+25'C to +150-C 2. Pulse lest Pulse width < SO ps, Duly cycle <1% 3. Switching time measurements performed on LEM TR-58 test equipment.