MTP5N05 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
'/£Ti£iy <z~>£.m.i-(-onaiicto'i lJ 10 ducts., Line. tx U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP4N08, MTP5N05 MTP4N10, MTP5N06 I)t'sii;iH'i-'> Data Sheet N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power RETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Silicon Gate for Fast Switching .Speeds — Switching Times Specified at 100°C
- Designer's Data — IQSS. vOS(on). VQs(th) and SOA Specified at Elevated Temperature
- Rugged — SOA is Power Dissipation Limited
- Source-to-Orain Dioda Characterized for Use With Inductive Loads TMOS o s 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET rOS(on) 3 0-« OHM 80 and 100 VOLTS SO ind 60 VOLTS MAXIMUM RATINGS
1 Rating
. Drain-Source Voltage Drain-Gate Voltage |HGS - 1.0 MO) Gate-Soure* VoHage Drain Currant Continuous Pulsed Gale Current — Pulsed Total Power Dissipation @ T(; = 2S°C Derate above 25°C Operating and Storage Temparaturn Rango Symbol VOSS VOGH VGS ID 'DM 'CM PO Tj.Tstg MTP 5N05 SO SNOB 4N08 4N10 100 100 ±20 -65 to 1 50 Unit Vdc Vdc Adc Adc Warn W/°C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Maximum Lead Tamp, for Soldering Purposes. 1/8* from case for 5 seconds «9JC TL 2.5 275 °C/W "Wont Cuv" Condition* The Designer's Data Sheet permits the design of most circuits entirely from the i nformation presented. Limit data — representing device characteristics boundaries—are given to facilitate "worst casa" design. MTP4NO* MTMN10 M1F5NOS MIP5N06
- uuifnn m a la TO-220A8 Quality Semi-Conductors