MTP425J3_15 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast switching Characteristic
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTP425J3 G：Gate D：Drain S：Source BVDSS -30V ID -50A RDS(ON)@VGS=-10V , ID=-10A 10mΩ(typ) RDS(ON)@VGS=-5V , ID=-7A 14mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 2/9 MTP425J3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 Gate-Source V oltage VGS ±25 V Continuous Drain Current @VGS=-10V , TC=25°C -50 Continuous Drain Current @VGS=-10V , TC=100°C -32 Continuous Drain Current @VGS=-10V , TA=25°C -11 Continuous Drain Current @VGS=-10V , TA=100°C ID Pulsed Drain Current IDM -100 *1 A TC=25℃ 50 *4 TC=100℃ 20 *4 TA=25℃ 2.5 Power Dissipation TA=100℃ PD 1.0 W Single Pulse Avalanche Energy EAS 30 *2 mJ Single Pulse Avalanche Current IAS -11 A Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : *1. Pulse width limited by safe operating area. *2 . Tj=25°C, VDD=-15V , L=0.5mH, RG=25Ω. *3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. *4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determined the current rating, when this rating falls below the package limit. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - VGS=0V , ID=-250μA VGS(th) -1.0 -1.5 -2.5 V VDS = VGS, ID=-250μA GFS - 20 - S VDS =-5V , ID=-10A IGSS - - ±100 nA VGS=±25V - - -1 VDS =-30V , VGS =0V IDSS - - -5 μA VDS =-24V , VGS =0V , Tj=55°C - 9.7 13 VGS =-10V , ID=-10A *RDS(ON) - 14 18 mΩ VGS =-5V , ID=-7A Dynamic *Qg - 32 - *Qgs - 11.3 - *Qgd - 8.4 - nC ID=-25A, VDS=-15V , VGS=-10V

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 3/9 MTP425J3 CYStek Product Specification *td(ON) - 17 - *tr - 10 - *td(OFF) - 85 - *tf - 23 - ns VDS=-15V , VGS=-10V , RG=6Ω, ID=-1A Ciss - 2825 - Coss - 248 - Crss - 191 - pF VGS=0V , VDS=-15V , f=1MHz Source-Drain Diode *VSD - -0.75 -1.2 V IS=-3A, VGS=0V *IS - - -50 A *trr - 26 - ns *Qrr - 18 - nC IS=-25A, VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 4/9 MTP425J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) -VGS=3V 10V,9V, 8V, 7V, 6V, 5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-2.5V VGS=-10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-10A RDS(ON)@Tj=25°C : 10mΩ -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-10A

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 5/9 MTP425J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed Ta=25°C Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-25A VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 1ms 100μs RDS(ON) Limit TC=25°C, Tj=150°, VGS=-10V RθJC=2.5°C/W, Single Pulse 10ms 100ms Maximum Drain Current vs CaseTemperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) -ID, Maximum Drain Current(A) VGS=-10V,RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 6/9 MTP425J3 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=50°C/W Power Derating Curve 0 20 40 60 80 100 120 140 160 T C, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 7/9 MTP425J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 8/9 MTP425J3 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2012.07.19 Revised Date : 2015.03.20 Page No. : 9/9 Spec. No. : C391J3 MTP425J3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Millimeters Marking: Device Name Date Code 425 □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.