MTM3N75 NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM3IM75 MTM3N80 MTP3N75 MTP3N80 TMOS POWER FETs
3 AMPERES
'DS(on) = 7 OHMS 750 and 800 VOLTS MAXIMUM RATINGS Rating Drain-Source Voltage Dratn Gate Voltaye (Res 1 MEM Gate-Source Voitacje — Continuous — Non repetitive (tp '* 50 MS] : Drain Current — Continuous — Pulsed i Total Power Dissipation <u TC • 25"C j Derate above 25' C Operating and Storage Temperature Range Symbol VDSS VDGfl VGS VGSM ID IWTM3N7S MTP3IM75 750 750 MTM3N80 MTP3N80 800 800 Unit Vdc Vdc Vdc Vpk Adc "DM 8 PD ! 7 b Watts 0-6 W.'-C TJ-Tstg 6510 150 C ^ ^ '^|rii'*''' "T*T=^; MTM3N75 CASE 1-Ofi TO-204AA THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient TO-204 TO- 2 20 1 Max. mum Lead Temperature for Soldering Purposes, 1 8' from case for 5 seconds RfJC RflJA TL CW 62.5 275 ;C i i A") m MTP3N75 MTP3N80 CASE 221A-04 TO-220AB MJ Bemi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi--- Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheet are current before placing orders. Quality Semi-Conductors
MTM/MTP3N75, 80 ELECTRICAL CHARACTERISTICS He -= 25 C unless otherwise noted) Characteristic Off CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = °- 'D - 0.25 mA) MTIWMTP3N75 MTM;MTP3N8Q Zero Gale Voltage Drain Current (VDS '- Rated VDSS- VQS - 0) (VDS - 0.8 Rated VDSS' VGS - 0- TJ 125'O Gate-Body Leakage Current, Forward IVQSF = 20 Vdc. VQS "" Ql Gate-Body Leakage Cut-rent, Reverse (V^gR - 20 Vdc, VDS = 0] ON CHARACTERISTICS' Gate Threshold Voltage '^05 VGS- <D " 1 mA' Tj - 100'C Static Drain-Source On-Resistance (VGS " 10 Vdc, ID 1.5 Adc) Drain-Source Qn-Voltage lV(]S 10 V) (ID - 3 Add (ID - 1.5 Adc, Tj 100'C) Forward Transconduciance (Vrjjs --• 15 V. IQ '• 1.5A) DYNAMIC CHARACTERISTICS inpul CaPK.wn« • (^f ^^ Vy.g .. n Output Capacitance . f 1 MHzi ^ i See Figure 11 Reverse Transfer Capacitance i Symbol V^BRyDSS IDSS 'GSSF 'GSSR VQS(th) rOSton) vDSlon) SFS Cjss CQSS "rss Min 750 300 1.5 0.6 Max 100 100 12CJO 300 Unit Vdc mAdc nAdc nAdc Vdc Ohms Vdc mrics PF swrTCHiwq CHARACTERISTICS* iTj - 100-0 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD ^ 125 v. ID ' ° 5 Ra'ed 'D See Figures 9, 13 and 14 IVDS 0.8 Rated VDSS. ID - Rated ID. VGS - 13V) See Figure 12 lcJ-on) lr ld(offl Qg Qgs agd 35 (Typl 20 (Typl ' 5 |Typl 150 300 100 SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Vollage Forward Turn-On Time (Ig - Rated Irj VGS - o* Hewerse flecovery Time INTERNAL PACKAGE INDUCTANCE (TO-204) |nTen~.gl Drain Ir.duciance (Measured from ihe contact screw on the deader closer ID the source o>n and ihq center of the die1 Internal Source Inductance 'Measured from the source pin, 0.25" from the package to tne source bond padl VSD : i iTypi 1.6 Vdc tgn Limited by stray inductance trr ; 420 (Typ) LCI 5 (Typl Ls • 12.5 ITyp "_] nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" trom package to center of die) Imetnai Source Incuctance (Measured from the source lead 0 25" frorr package to source band oad.) Ld
3.5 ITypl
4.5 (Typ! L5 7.5 (Typ) - nH
- Pulse Test Pu'se W.dtT - 300 ws O^'.f Cycle - 2°.