MTP3N60

MTP3N60 NJSEMI | Alldatasheet

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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS 600 V 600 V RDS(on) < 2.5Q < 2.5 Q. ID 3.9 A 2.5 A TYPICAL RDS(on) = 2n AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100QC APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM D (2) ft (1) S(3) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID !DM(») Plot VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (Res = 20 K£i) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value MTP3N60 MTP3N60FI 600 600 ± 20 3.9 2.4 100 0.8 2.5 1.5 0.28 2000 -65 to 150 150 Unit V V V A A A W W/°C V (•) Pulse width limited by safe operating area NJ Semi-Conductors reservesThe right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1.25 ISOWATT220 3.57 62.5 0.5 300 °C/W °c/w °c/w AVALANCHE CHARACTERISTICS Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 5 < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max, 8 < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by T, max, 5 < 1%) Max Value 3.9 300 7.7 2.4 Unit A mj mJ A ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGs = 0) Gate-body Leakage Current (VDs = 0) Test Conditions !D = 250|aA VGS=0 VDS = Max Rating VDS = Max Rating x 0.8 TC=125°C VGS = + 20 V Min. 600 Typ, Max. 250 ± 100 Unit V HA HA nA ON(* Symbol VGS(th) RDS(on) lD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS ID = 1mA VGS = 10V ID= 1.5 A VDS > b(on) X RDS(on)max VQS= 10 V Min. 3.9 Typ. Max. 4.5 2.5 Unit V n A DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(OH) X RoS(on)max ID = 1.5 A VDs= 25 V f = 1 MHz VGS= 0 Min. 1.5 i Typ- 2.6 560 Max. 800 130 Unit S pF pF PF

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr (di/dt)on Qg Qgs Qgd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD=225V ID = 2. 5 A RG = 15 Q VGS = 10 V (see test circuit, figure 3) VDD = 480V ID = 4A RG= 15 n VGS = 10 V (see test circuit, figure 5) VDD = 480 V ID = 4 A VGS- 10V Win. Typ. 200 Max. Unit ns ns A/(js nC nC nC SWITCHING OFF Symbol tr(Voff) tf te Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V ID = 4 A RG= 15 Q VGS = 10 V (see test circuit, figure 5) Min. Typ. rMax. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(') VSD(*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 3.9 A VGS = 0 ISD = 4A di/dt = 100 A/us VDD = 100 V Tj = 150°C (see test circuit, figure 5) Min. Typ. 420 3.7 Max. 3.9 Unit A A V ns uC A (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 10" j 0°' ' -|— ^ rJ j ^ C ' I D.C, C'l I . 2 1 1 fc^ __j s H 1 ^ , IRATION1 ^ Li.. ' Qu. i 1ms Oms 100ms B 1 . 2 4(1,2 4 10* 1DS V., , \\P M 10'. «", fi a Z io'7 i :it= D.C. -'i OPEF 1 > ATION „ 2 4»,2 488,1 4 D° 10( 10* r 100/ 1ms BlOm 1DOr

• 1— II is s ns s 11.2 4(1 1DS VK (V)