MTP3N55 NJSEMI | Alldatasheet

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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100"C
  • Designer's Data — IQSS- vDS(on)- vGS(th) an<i SOA Specified at Elevated Temperature
  • Rugged — SOA Is Power Dissipation Limited
  • Source-to-Dra!n Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS THERMAL CHARACTERISTICS Ruling Drain-Source Voltage Drain-Gate Voltage (RQS = 1 IWl) Gate-Source Voltage — Continuous — Non-repetitive (tp « so ps) Drain Current Continuous Pulsed Total Power Dissipation @ TC = JB'C Derate above 25'C Operating and Storage Temperature Range Symbol Vrjss VDGR VQS VGSM ID IDM PD Tj- T«g MTP3N55 650 550 MTM3N90 MTP3N60 BOO 600 ±20 ±40 0,6 -6510 150 Unit Vdc Vdc Vdc Vpk Adc Watts \\WC Thermal Resistance Junction to Case Junction to Ambient TO-204 TO-220 Maximum Lead Temperature for Soldering Purposes, 1/8* from case for 5 seconds "we "«JA TL 1.67 62.5 27G °C/W MTM3N60 MTP3N55 MTP3N60 TMOS POWER FETs

3 AMPERES

'DS(on) = 2.5 OHMS 550 and 600 VOLTS MTM3NBO TO-ZMAA CO-&OAB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS (Tc - 25-C unless otherwise noted) Characteristic Symbol Min Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - 0, ID = 0.26 mA) MTP3NB5 MTM/MTP3N60 Zero Gate Voltage Drain Current (V[>s = Rated VDSS. VGS - 0] (Vos - 0.8 Rated VDSS, VGS = 0, Tj = 125'C) Gale-Body Leakage Currant, Forward (VQSF = 20 Vdc, Vps - 01 Gate-Body Leakage Current, Reverse [VQSR ™ 20 Vdc, VQS = 0) VIBRIDSS loss 'GSSF IGSSR 650 600 _ - 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS' Gate Threshold Voltage Wos - VGS, 'D = 1 mA> Tj = 100'C Static Drain-Source On-Reslstanee (VGS " 10 Vdc, ID - 1.5 Adc) Drain-Source On-Voltago (VQS = 101/1 (ID - 3 Adc) (ID - 1.6 Adc, TJ = loo-c) Forward Transconductance (VDS = IB V, ID » 1.5 A) VQS(th) 'OS(on) VDS(on) 9FS 1.6 I 1.6 4.5 2.5 7.5 Vdc Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Vos - 26 V, VQS - 0, f - 1 MHi) See Figure 11 Clss COBS Cras 1000 300 PF SWITCHING CHARACTERISTICS* (Tj - 100'C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fell Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD - 25 v, ID - 0.6 Rated ID "gen " 60 ohms) See Figures 9, 13 and 14 IVDS - 0.8 Rated VDSS. ID = Rated ID, VQS - 'o vi See Figure 12 'cf(on) tr «d(off) Og Qgs c-qd 16 (Typ) 8 (Typ) 8 (Typ) 100 180 IB na nC SOURCE DRAIN DIODE CHARACTERISTICS' Forward On-Voltage Forward Turn-On Time Reverse Recovery Time dS - Rated IQ VGS - 0) VSD ton trr 1.1 (Typ) | - Vdc Limited by stray Inductance 185 (Typ) | — ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ld 6 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad.) Ld Ls 3.5 (Typ) 4.5 (Typ) 7.6 (Typ) nH

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Figure 11. Capacitance Variation Figure 12. Gate Charge versus Figure 13. Switching Test Circuit Figure 14. Switching Waveforms

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