MTP3055E NJSEMI | Alldatasheet
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Technical content
, O n&. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3055E N-CHANNEL 60V-0.1Q-12A TO-220 STripFET™ MOSFET TYPE MTP3055E VDSS 60 V RDS(on) < 0.15 a ID 12 A TYPICAL RDS(on) = 0.1 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM IDM(-) Plot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (Res = 20 kii) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (pulsed) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Storage Temperature Max. Operating Junction Temperature Value ± 20 -65 to 175 175 Unit V V V A A A W {•) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
R|hc-s Thermal Thermal Thermal Maximum Resistance Resistance Resistance Junction-case Junction-ambient Case-sink Lead Temperature For Soldering Max Max Typ Purpose 3.75 62.5 0.5 300 °C/W oC/W °C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Max Value Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss 'GSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGs = 0) Gate-body Leakage Current (VDs = 0) Test Conditions !D=250|uA VGS=0 VDS = Max Rating VDS = Max Rating x 0.8 Tc = 125 °C VQS = + 20 V Min. Typ. Max. ± 100 Unit V MA uA nA ON (*) Symbol VcS(th) RoS(on) lD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS ID = 250 u.A VGS = 10V ID= 7 A VDS > lD(on) X RDS(on)ma!< VGS = 10 V Min. Typ. 2.9 0.1 Max. 0.15 Unit V il A DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > lD(on) X RDS(on)max ID = 6 A VDS = 25 V f = 1 MHz VGS = 0 Min. Typ. 760 100 Max. Unit S PF PF pF
ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol td(on) tr td(off) tf Qgs Qgd Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VOD = 30 V ID= 7 A RG= 50 £J VGS= 10 V (see test circuit) ID= 12 A VGS = 10 V VDD = 40 V (see test circuit) Min. Typ. Max. Unit ns ns ns ns nC nC nC SOURCE DRAIN DIODE Symbol ISD ISDM(') VSD (») trr Qrr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD = 12 A VGS =0 ISD = 12 A di/dt = 100 A/us VDD = 30 V Tj = 150 °C Min. Typ. 0.17 Max. 2.0 LUnit A A V ns uC ) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (•) Pulse width limited by safe operating area