MTM2N85 NJSEMI | Alldatasheet

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/£ii£ij <z3£.mi-L,on.auctoi L/^ioauata, Line. C7 tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
  • Designer's Data — IQSS. vDS(on). vGS(th) »"d SOA Specified at Elevated Temperature
  • Rugged — SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MTM2N85 MTM2N90 MTP2N85 MTP2N90 TMOS POWER FETs

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'DSIonl = 8 OHMS 850 »nd 900 VOLTS MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RQS = 1 Mfl> Gate-Source Voltage — Continuous — Non-repetitive (tp =s SO /is) Drain Current — Continuous — Pulsed Total Power Dissipation @ Trj « 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID 'DM PD Tj. Ts,g MTM2N85 MTP2N8S 850 850 MTM2N90 MTP2N90 900 900 ±20 ±40 0.6 -65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts wrc THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient TO-204 TO-220 Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds "»JC "«JA TL 1.67 62.5 275

  • c/w MTM2N8S MTM2N90 TO-204AA TO-220AB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. O ne. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS - 0, ID = 0.26 mAI MTM/MTP2N8S MTM/MTP2N90 Zero Gate Voltage Drain Current <VDS = Rated VDSs. VGS = 0) (VDS = 0.8 Rated VDSS. VGS = 0, Tj = 125°C) Gate-Body Leakage Current, Forward (VQSF = 20 Vdc. VDS - 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS " °l V(BR)DSS IDSS IGSSF IGSSR 860 900 I 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS. ID - 1 <"M TJ = loo-c Static Drain-Source On-Resistance (VGS = 10 Vdc, ID - 1 Adc) Drain-Source On-Voltage (V<3s = 10 V) dp = 2 Adc) (ID = 1 Adc. Tj = 100'C) Forward Transconductance (VDS = 15 V, ID = 1 A) VGS(th) rDS(on) VDS(on) 9FS 1.5 0.5 4.5 Vdc Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS • 25 V, VGS ~~ 0- f = 1 MHz) See Figure 11 Ciss Coss Crss 1200 300 PF SWITCHING CHARACTERISTICS* (Tj = 100°C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 12S V, ID = 0.5 Rated ID Rgen = 50 ohms) See Figures 9, 13 and 14 (VDS = 0.8 Rated VDSS- ID = Rated ID, VGS = 10V) See Figure 12 td(on) tr

  • dloffl tf Qg Qgs Qgd 33 (Typ) 20 (Typ) 13 (Typ) 160 200 100 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated ID VGS - oi VSD 'on 'rr 1 (Typ) 1.4 Vdc Limited by stray inductance 420 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ud LS 5 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.26" from package to source bond pad.) Ld LS 3.5 (Typl 4.5 (Typ) 7.5 (Typ) nH
  • Pulse Test: PulM Width « 300 M*. Duty Cycrt « 2S. Quality
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