MTP2N80 NJSEMI | Alldatasheet

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zSzmL-donductoi ZPioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TELEPHONE: (973) 376-2922 (212)227-6005 FAX; (973) 376-8960 M*MN'. -I*--! hAftf

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R !04 S 115 T 59/ U OM V IK MAX IS7S 1019 4ii on 373 IK 383 05i 4!J 139 533 779 139 647 MAXIMUM RATINGS Bntlng Drain Source Voltage Drain Gate Voltage (855 - 1 Mill Gate-Source Voltage — Continuous — Non-repetitive (tp ^ 50 ^s) Drain Current — Continuous — Pulsed Total Power Dissipation <<? TC - 25"C Derate above 25"C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID 'DM PD TJ. TstH - B n INCHSS MIN MAX 0570 0(» 0380 0405 0160 0.190 0025 00.15 0 M! 0 147 009! 0105 0«0 0155 0011 002? 0500 056! 0045 0055 0190 0210 0 100 0 120 0000 0110 0045 0055 0735 0255 OOM OOW 0045 800 800 *20 *40 0.6 65 to 1 50 Unit Vdc Vdc Vdc Vpk Adc Watts wrc THERMAL CHARACTERISTICS Thermal Resistance Junction to Cflse Junction to Ambient TO ?04 10220 Maximum Lead Temperature for Solrifiinq Purposes, 1^8' from case for 5 seconds «wc IDJA 1.67 625 27S "C/VV J NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Ounlitv

ELECTRICAL CHARACTERISTICS <TC - 25'C unless otherwise noted! Characteristic Symbol Win Max I Unit I OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS = 0, ID = 0.25 mA| Zero Gate Voltage Drain Current (Vps = Rated VQSS, VGS -- 0] (VDS - 0.8 Rated VDSS, VGS ' 0, Tj = 12S"C| Gate Body Leakage Current, Forward (VQSF " 20 vdc' VDS = 0) Gate-Body Leakage Current, Reverse (VgsR 20 Vdc, VOS = "1 V(BR)DSS IDSS 'GSSF 'GSSR BOO 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS9 Gate Threshold Voltage (VpS =• VGS, !D ' mA> Tj - 100-C Static Drain-Source On Resistance (VQS - 10 Vdc, ID :: 1 Add Drain-Source On-Voltage (VQS = 10 VI |ID •--- 1 Adc) (ID - 1 Adc, Tj 100"CI Forward Transconductance (VDS 15 V, Irj 1 A) vGS(th) 'DS(on) vDS(on| 9FS 1.5 0.5 4.8 Vdc Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS - 25 v, VGS f 1 MHz) See Figure 11 Ciss Coss C,ss 1200 300 pF SWITCHING CHARACTERISTICS" (Tj = 100 Cl Turn -On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge (VDn 125 V, ID = 0.5 Rated ID See Figures 9. 13 and 14 (VDS °-8 Rated Vrjss. ID Rated ID, VGS 10 V] See Figure 12 'd(on) tr 'd(off| . °85 Ogd 33 (Typ) 20 (Typl 13(Typl 150 200 100 ... n SOURCE DRAIN DIODE CHARACTERISTICS' Forward On Voltage Forward Turn-On Time Reverse Recovery Time S Rated ID VGS 0) 1 (Typl ] 1-4 Limited by stray inductance 420 (TypTf • "S INTERNAL PACKAGE INDUCTANCE (TO 204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, Q 25" from the package to the source bond pad) Ld 5 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25' from package to source bond pad ) Ld 35 (Typ) 4.5 (Typ) 7.5 (Typ) nH d Tnjl Puke Width • 300 ,.5, Dirty Cycle « 7%