MTP2N60E NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

, U nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance overtime. In addition, this advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits ar|d Vps(on) Specified at Elevated Temperature MTP2N60E ir TMOS TMOS POWER FET

2.0 AMPERES

600 VOLTS

RDS(on) = 3.8 OHMS D O 6 S TO-220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RQS = 1 -° Mti) Gate-to-Source Voltage — Continuous — Single Pulse (tp < 50 (is) Drain Current — Continuous — Single Pulse (tp < 10 us) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy — Starting Tj = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 0, Peak IL = 2.0 Adc) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds Symbol VDSS VDGR VGS ID IDM PD Tj, Tstg EAS Rejc R0JA TL Value 600 600 ±20 ±40 2.0 9.0 0.4 -55 to 150 190 2.5 62.5 260 Unit Vdc Vdc Vdc Adc Watts W/°C mJ °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 (lAdc) Temperature Coefficient (positive) Zero Gate Voltage Drain Current (vDs = 600 vdc, VGS = o vdc) (Vos = 480 Vdc, VGS = 0 Vdc, Tj = 125°C) Gate-Body Leakage Current — Forward (VQSF = 20 Vdc, VDS = ° Vdc) Gate-Body Leakage Current — Reverse (VQSR = 20 Vdc, VDS = ° Vdc) V(BR)DSS IDSS !GSSF !GSSR 600 I 480 0.25 1.0 100 100 Vdc mV/°C mA nAdc nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS. ID = 250 uAdc) Temperature Coefficient (negative) Static Drain-to-Source On-Resistance (VQS = 1 0 Vdc, ID = 1 .0 Adc) Drain-to-Source On-Voltage (vGs = 10 vdc, iD = 2.0 Adc) (VGS = 10 Vdc, ID = 1 0 Adc, Tj = 125°C) Forward Transconductance (VDS - 50 Vdc, ID - 1 .0 Adc) VQS(th) RDS(on) vDS(on) SFS 2.0 1.0 3.1 8.5 3.3 4.0 3.8 8.2 8.4 Vdc mV/°C Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Reverse Transfer Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f - 1 0 MHz) Cjss Crss CQSS 435 9.2 PF SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDD = 3°° vdc, ID = 2.0 Adc, VGS = 10 Vdc, Rg = 18") (VDS = 40° Vdc, ID = 2.0 Adc, VGS = 10 vdc) td(on) V td(off) tf QT QI 2.0 6.0 5.0 ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 2.0 Adc, VGS = 0 Vdc) (Is = 2.0 Adc, VGS = 0 Vdc, Tj = 125°C) (IS = 2.0 Adc, VGS = 0 Vdc, dls/dt= 100 A/us) VSD trr 1.0 0.9 340 1.6 Vdc ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain 0.25" from package to center of die) Internal Source Inductance (Measured from the source pin 0.25" from package to source bond pad.) Ld LS 3.5 4.5 7.5 nH (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. (2) Switching characteristics are independent of operating junction temperature.