MTP20N10E NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

<£e.mi-Concluctoi ZPioducti, (Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960 Designer's Data Sheet TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and com- mutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power sup- plies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

  • Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode— Undamped Inductive Switching (UIS) Energy Capability Specified at 100°C.
  • Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits MAXIMUM RATINGS MTP20N10E TMOS POWER FET

20 AMPERES

ros(on) = 0.15 OHM

100 VOLTS

Drain-Gate Voltage (RGS ~ 1 M!" Gate-Source Voltage — Continuous — Non-repetitive Up < 50 jis) Drain Current — Continuous — Pulsed Total Power Dissipation (n TC = 25°C Derate above 25"C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IOM PD Tj, Tstg Value 100 100 ±20 ±40 100 0.67 -6510 175 Unit Vdc Vdc Vdc Vpk Adc Warts W/°C UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (Tj <s 175"C) Single Pulse Drain-to-Source Avalanche Energy Repetitive Pulse Drain-to-Source Avalanche Energy WDSSIII WDSS (21 WDSR (3) 400 100 mJ THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds RftJC L_ "»JA TL 1.6 62.5 275 °C/W (IIVDD = 25V, ID = 20 A, L = 1.5 mH, Initial TC = 25°C (2) VDD - 25 V, ID = 20 A. L = 380 ,M, Initial TC = 100"C (3)f - 10kHz Designer's Data for "Worst Case" Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information pn SOA Limit curves — representing boundaries on device characteristics — are given to facilitate "worst case" design, TMOS and Designer's ire trademarks of Motorola Inc. Quality Semi-Conductors

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201)376-8960 MTP20N10E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Current (VDS = Rated VDSs. VGS = 0) <VDS » Rated VD$$, VGS = 0, Tj = 125°C) Gate-Body Leakage Current, Forward (VQSF - 20 Vdc, VDS ~ °' Gate-Body Leakage Current, Reverse (VQSR = 20 Vdc, VQS = 01 V(BR)OSS IDSS 'GSSF IGSSR 100 100 100 Vdc M nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 1 ">*> Tj = 100°C Static Drain-Source On-Resistance (VQS = 10 Vdc, ID = 10 Adc) Drain-Source On-Voltage (VQS = 10 V) (ID - 20 Adc) (ID = 10 Adc, Tj = 100*0 Forward Transconductance (VDS = 15 V. ID = '0 A| vGS(th) i-DS(on) VDS(on) 9FS 1.5 - ' 4.5 0.15 3.6 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (vos - 25 v, VGS - o, f = 1 MHz) See Figure 16 Ciss Coss Crss 1600 600 200 PF SWITCHING CHARACTERISTICS* (Tj = 100'CI Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VoD = 25 V, ID = 0.5 Rated ID See Figure 9 (VDS ~ °-8 Rat8d VDSS. ID - Rated ID, VGS = 10 V) See Figures 17 and 18 'd(on) tr 'd(off) tf Ogs Qgd 28 (Typ) 15 (Typ) 13 (Typ) SO 450 100 200 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS - Rated ID VGS = o> VSD ton 'rr 1.4 (Typ) 1.9 Vdc Limited by stray inductance 300 (Typ) ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25* from package to center of die) Internal Source Inductance (Meaiurtd from the source lead 0.25" from package to source bond pad.) l-d Ls 3.5 (Tvp) 4.5 (Typ) 7.5 (Typ) nH

  • PulM Tut: PulH Width * 300 nt. Duty Cycl« * 2%. Quality Semi-Conductors