MTP15N05E NJSEMI | Alldatasheet
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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Silicon Gate for Fast Switching Speeds ~~ Switching Times Specified at 100°C
- Designer's Data — IpsS- vDS(on)< vGS(th) and SOA Specified at Elevated Temperature
- Rugged — SOA is Power Dissipation Limited
- Source-to-Drain Diode Characterized for Use With Inductive Loads MTP15N05E TMOS TMOS POWER FET
15 AMPERES
RDS(on) - 0.1 OHM
50 VOLTS
Drain-Gate Voltage <RQS = 1 Mn' Gate-Source Voltage — Continuous — Non-repetitive (tp * 50 MS) Drain Current — Continuous — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VQS VGSM ID IDM PD Tj, Tatg Value SO ±20 ±40 0.6 -65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C X THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient TO-220 Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds R»JC RSJA TL 1.67 62.5 260 °C/W TO-22QAB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Win Max Unit OFF CHARACTERISTICS Dram-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Current (VDS = Rated VDSS- VGS = °) (VDS = Rated VDSs- VGs = ". TJ = 125°C) Gate-Body Leakage Current, Forward (Vggp = 20 Vdc, VD$ = 0) Gate-Body Leakage Current, Reverse (VQSH = 20 Vdc, VDS = °' V(BR)OSS IDSS IGSSF 'GSSR 100 100 100 Vdc pAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ]D = 1 mA) Tj = 100°C Static Drain-Source On-Resistance (Vgs = 10 Vdc, Ifj = 7.5 Adc) Drain-Source On-Voltage (VGS = 10 V) (ID - 15 Adc) (ID = 7 5 Adc, Tj = 100°C) Forward Transconductance (Vos = 15 V, ID = 7.5 Al VQS(th) RDS(on) vDS(on) 9FS 1 5 3.5 4,5 0.1 2.9 2.4 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Vos ~ 25 V' VGS ~ "• f = 1 MHz) See Figure 1 1 CISS CDSS crss 700 400 200 PF SWITCHING CHARACTERISTICS' (Tj = 100'C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 25 V. ID = 0.5 Rated ID See Figures 9, 13 and 14 IVDS ~ °-8 Rated VDSS. ID = Rated ID, VGS = 1"v' See Figure 12 td(on) tr td(off) tf QQ Qgs °gd 17 (Typ) 8 (Typ) 9 (Typ) 150 200 100 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (Ig - Rated ID VGS = 0) VSD 'on Vr 1.8 (Typ) 2.5 Vdc Limited by stray inductance 320 (Typ) ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the dram lead 0 25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad ) Ld Ls 3,5 (Typ) 4.5 (Typ) 7.5 (Typ) nH
- Pulse Test Pulso Width * 300 jus. Duty Cycle * 2%