MTP15N05 NJSEMI | Alldatasheet
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, O 'nc. MTP15N05 MTP15IM06 MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage (RQS - 1 Ml!) Gate-Source Voltage — Continual — Non-repetitive (tD f 50 us) Drain Current — Continuous — Pulsed Total Power Dissipation in TC = 25TC Derate above 25°C Operating and Storage Temperature Range VDSS VDGR v'ss VGSM ID IDM PD Tj. Tstg MTP 1SNOS 15N06 1 20 1 40 0.6 -65 to 150 Vdc Vdc Vdc Vpk Adc, Wans W/°C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient TO-220 Maximum Lead Temperature for Soldering Purposes. 1 8" from case for 5 seconds R»JC RflJA TL 1.67 62.5 275 °C/W ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS* DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS* (Tj = 100'CI CASE TO-Z20AB Characteristic Symbol Min Mix Unit Drain-Source Breakdown Voltage (VQS = 0, ID = 0.25 mA) MTP15N05 MTP15N06 Zero Gate Voltage Drain Current 1VDS - Rated VDSS, VQS = 01 iVfjs =• Rated VDSS. VGS = 0, Tj = 125:C) Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VQSR = 20 Vdc, VDS = 0) V(BR)DSS 'DSS IGSSF IGSSR 100 100 Vdc MAdc nAdc 100 | nAdc Gate Threshold Voltage (VDS = VGS. 'D - 1 mA) Tj = 100CC Static Drain-Source On-Resistance (VQS - 1° Vdc' '0 = 7-5 Adc' Drain-Source On-Voltage (VGS - 10V) (ID = 15 Adc) (ID = 7.5 Adc. Tj = 100'C) Forward Transconductance (VDS ~ 15 V. ID = 7.5 A) VGS(th) rDS(on) vDS(on) 9FS 1.5 3.5 4.5 0.16 2.9 2.4 Vdc Ohm Vdc mhos Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS • 25 v VGS ~ "• f = 1 MHzl See Figure 11 Ciss C0SS Crss 700 400 200 pF Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (V0D = 25 v, ID = 0.5 Rated ID See Figures 9. 13 and 14 (VDS ~ °-8 Rated VDSS. ID = Rated I0. VGS = 10V> See Figure 12 'd(on) V td(off) If Qg Qgs Qgd 17(Typ) 8 (Typ) 9 (Typ) 150 200 100 ns nC SOURCE DRAIN DIODE CHARACTERISTICS' Forward On-Voltage Forward Turn-On Time Reverse Recovery Time US ~ Rated IQ VGS = oi VSD ^on trr l.SITyp) 2.5 Vdc Limited by stray inductance 320 (Typ) ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad.) Ld LS 3.5 (Typl 4.5 (Typl 7.5 (Typ) nH