MTP12P05 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
  • Designer's Data — IpSS- vDS(on)< vGS(th) and SOA Specified at Elevated Temperature t Rugged — SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS THERMAL CHARACTERISTICS Drain-Source Voltage Drain-Gate Voltage (Res = i wn) Gate-Source Voltage — Continuous — Non-repetitive {tp ^ 50 ^s) Drain Current Continuous Pulsed Total Power Dissipation (a TC = 25°C Derate above 25"C Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID 'DM PD Tj,Tstg MTM OR MTP 12P05 12P06 50 60 50 60 12P08 12P10 100 100 ±20 ±40 0.6 -65 to 150 Vdc Vdc Vdc Vpk Adc Watts vyrc °c" MTM12P05 MTM12P06 MTM12P08 MTM12P10 MTP12P05 MTP12P06 MTP12P08 MTP12P10 TMOS POWER FETs

12 AMPERES

fDSIonl = 0-3 OHM 50, $0, 80 and 100 VOLTS Thermal Resistance Junction to Case Junction to Ambient TO-204 TO-220 Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds RWC R»JA TL 1.67 62.5 275 "CAW MTM12P05 MTM12P06 MTM12P08 MTM12P10 TO-204AA MTP12P05 MTP12P06 MTP12P08 MTP12P10 TO-220AB Quality Semi-Conductors

«£XV£ ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 MTM/MTP12P05. 06, 08,10 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Win Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) MTM/MTP12P05 MTM/MTP1 2P06 MTM/MTP12P08 MTM/MTP12P10 Zero Gate Voltage Drain Current <VDS = Rated VDSS, VQS = 0) (VDS = R<"»<i VDSS- VGS = o, TJ = i25°o Gate-Body Leakage Current, Forward (VQSF = 20 Vcic. VDS = u' Gate-Body Leakage Current, Reverse (VGSR - 20 Vdc, VDS = 0) VIBRIDSS IDSS !GSSF !GSSR 100 100 100 100 Vdc Mdc nAdc nAdc ON CHARACTERISTICS1 Gate Threshold Voltage (VQS = VQS* !D = ' mA) Tj = 100°C Static Drain-Source On-Resistance (VQS = 10 Vdc, ID - 6 Adc) Drain-Source On-Voltage ( VGS = 10V) (ID - 12 Adc) (ID = 6 Adc, Tj = 100°C) Forward Transconductance (Vos = 18 V, ID = 6 A) VGS(th) T)S(on) vDS(on) BFS 1.5 4.5 0.3 4.2 3.8 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS - 25 v. VGS ~ °- f = 1 MHz) See Figure 10 Cjss Coss Crss 920 675 200 pF SWITCHING CHARACTERISTICS* (Tj = 100°C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 25 V, ID = O.S Rated ID See Figures 12 and 13 (VDS ~ °8 Rated VDSS ID = Rated ID, VQS = 10 V) See Figure 11 td(on) tr 'd(off) tf Qgs Ogd 33 (Typ) 16 (Typ) 17 (Typ) 150 150 150 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time Us = Rated ID VGS = 0) VSD 'on trr 4 (Typ) 5.5 Vdc Limited by stray inductance 300 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ld Ls 5 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad.) Ld LS 3.5 (Typ) 4.5 (Typ) 7.5 (Typ) nH

  • Pulu T.it: Pulu Width < 300 tt>. Duty Cycl* * 2%. Quality Semi-Conductors